Introduction Environmental Stress Failure Modes Matrix Qualification P
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Switch Reliability Report
Introduction Environmental Stress Failure Modes Matrix Qualification Philosophy Summary Long Term Reliability Test Transistors 4.1.1 HTRB 4.1.2 HTGB 4.1.3 Temperature Cycling 4.1.4 Power Cycling 4.1.5 H3TRB 4.1.6 Autoclave Diodes 4.2.1 HTRB 4.2.2 Temperature Cycling 4.2.3 Power Cycling 4.2.4 H3TRB 4.2.5 Autoclave Accelerated Life Stress Tests
INTRODUCTION
March, 2003 Reliability Report been expanded include test results switch devices well input/output devices. report contains accumulated data obtained power MOSFET transistors, IGBT's, Schottky diodes, Fast Recovery Epitaxial Diodes (FREDS), Input Rectifiers SCRs built International Rectifier Corporation's facilities well International Rectifier subcontractors. Section contains description ENVIRONMENTAL STRESS TESTS which performed observed failure modes. Section MATRIX QUALIFICATION PHILOSOPHY, presentation philosophy reliability testing that allows extrapolate reliability devices based upon results similar devices. following this rationale, International Rectifier able assess reliability thousands separate devices based smaller sample size. Section present report contains update latest results LONG TERM RELIABILITY TESTING PROGRAM. data separated initially function (transistors diodes) further subdivided down individual part number. data presented tables limited devices with date codes after, 0101. This provides minimum month rolling average from quarter quarter. Section presents acceleration factors which have been obtained high temperature reverse bias (HTRB), gate stress acceleration applied gate bias voltage thermal acceleration, power cycling capability, voltage acceleration under high humidity environmental stress, applied bias acceleration under HTRB conditions applied bias acceleration Nchannel P-channel gate stress. Additional switch reliability information obtained contacting following individuals: Cesar Gonzalez Reliability Engineer International Rectifier HEXFET America (909)375-5215 Richard Dowling Reliability Laboratory Manager International Rectifier HEXFET America
SECTION ENVIRONMENTAL STRESS FAILURE MODES
ENVIRONMENTAL STRESS TEST
HIGH TEMPERATURE REVERSE BIAS (HTRB)
CONDITIONS:
CIRCUIT DIAGRAM
Temperature: Duration:
150°C 175°C 1000 hours (typical)
Bias: Maximum rated BVDSS voltage ratings 500V; maximum rated BVDSS voltage ratings from 600V 1000V
PURPOSE:
purpose high temperature reverse bias burn-in stress devices with applied bias blocking mode (cut-off mode) while elevated junction temperatures. This will accelerate blocking voltage degradation process.
FAILURE MODES:
primary failure mode HTRB stress gradual degradation breakdown characteristics BVDSS. This degradation been attributed presence foreign materials polar/ionic contaminants. These materials, migrating under application electric field high temperature, perturb electric field termination structure. secondary failure mode, threshold voltage degradation been present HTRB stress with less frequency than primary failure mode. mechanism responsible this degradation under investigation. Extreme care must exercised course long term test avoid potential hazards such electrostatic discharge electrical overstress gate during test. Failures arising from this abuse virtually indistinguishable from true HTRB failures which result from actual stress test.
SENSITIVE PARAMETERS:
BVDSS, IDSS, IGSS, VGS(th)
ENVIRONMENTAL STRESS TEST
GATE STRESS
CONDITIONS: Temperature: 175°C Duration: (typical) Bias: 150°C
CIRCUIT DIAGRAM
1000
hours
(N-channel) (P-channel)
PURPOSE:
purpose long term high temperature gate stress stress devices with applied bias gate while elevated junction temperatures. This will accelerate what known time-dependent dielectric breakdown (TDDB) gate structure.
FAILURE MODES:
primary failure mode long term gate stress rupture gate oxide, causing either resistive short between gate-to-source gate-to-drain what appears breakdown diode between gate source. oxide breakdown TDDB been attributed degradation time existing defects thermally grown oxide. These defects take form localized thickness variations, structural anomalies presence particulate within oxide. Extreme care must exercised course long term test avoid potential hazards such electrostatic discharge electrical overstress gate during test. Failures arising from this abuse virtually indistinguishable from true TDDB's which result from actual stress test. Another failure mode occasionally observed degradation threshold parameter, VGS(th), presence highly mobile ions such Sodium ions within gate oxide. Under influence bias high temperatures, these ions will move through oxide toward negative surface once sufficient number have accumulated, channel vicinity begin invert, lowering effective threshold voltage. This failure mode very rare with HEXFETs inherent features design cleanliness wafer fabrication.
SENSITIVE PARAMETERS:
IGSS, GS(th)
ENVIRONMENTAL STRESS TEST
POWER CYCLING
CONDITIONS: DIAGRAM Temperature Tmin 30°C Tmax 30°C 70°C 100°C Duration: cycles Bias: 5,000 10,000
CIRCUIT
11V(on)/0V(off)
PURPOSE:
purpose power cycling simulate thermal current pulsing stresses which devices will encounter actual circuit applications when either equipment turned power applied device short bursts interspersed with quiescent, power periods. simulation achieved on/off application power each device while they active linear region.
FAILURE MODES:
primary failure mode power cycling thermal fatigue silicon/metal interfaces metal/metal interfaces. fatigue, thermo-mechanical stresses from heating cooling, will cause electrical thermal performance degrade. degradation occurs header/die interface, then thermal impedance, will begin increase well before electrical effect seen. degradation occurs wire bond/die interface wire bond/post interface, then resistance, RDS(on) will slowly increase become unstable with time. thermal impedance, when measured during this time appear decrease change erratically. mechanical stresses from application power also propagate fractures silicon when thermally mismatched solder/heat sink system. These fractures will manifest themselves form shorted gates degraded breakdown characteristics (BVDSS).
ENVIRONMENTAL STRESS TEST
TEMPERATURE CYCLING
CONDITIONS: Temperature:
Tmin -55°C Tmax +150°C 205°C 1000 cycles (typical) bias applied during test
Duration: Bias: PURPOSE:
purpose temperature cycling simulate thermal stresses which devices will encounter actual circuit applications with power cycling) combination with potentially extreme operating ambient temperatures. Some equipment destined used extreme environments, subject daily temperature cycles.
FAILURE MODES:
primary failure mode temperature cycling thermal fatigue silicon/metal interfaces metal/metal interfaces. fatigue, case power cycling section 2.3, results from thermomechanical stresses heating cooling will cause electrical thermal performance degrade. degradation occurs header/die interface, then thermal impedance, will begin increase well before electrical effect seen. degradation occurs wire bond/die interface wire bond/bond post interface, then resistance, RDS(on) will slowly increase become unstable with time. thermal impedance, when measured during this time appear decrease change erratically. mechanical stresses from temperature also propagate fractures silicon when thermally mismatched solder/heat sink system. These fractures will manifest themselves form shorted gates degraded breakdown characteristics (BVDSS).
SENSITIVE PARAMETERS:
IGSS, BVDSS,
RDS(on).
ENVIRONMENTAL STRESS TEST
TEMPERATURE HUMIDITY (85°C/85%RH)
CONDITIONS: DIAGRAM Temperature: +85°C Duration: 1000 hours (typical) Relative Humidity: Bias: 100% maximum rated BVDSS 100V devices with rated BVDSS greater than 100V. PURPOSE:
CIRCUIT
purpose temperature-humidity-bias testing subject non-hermetic encapsulated devices temperature humidity extremes with bias drain. This test method examining ability non-hermetic package withstand deleterious effects humid environment. devices placed temperature humidity chamber ambient pressure biased cut-off mode.
FAILURE MODES:
There primary failure modes which have been observed. first failure mode comes about result ingression water molecules into active area surface die. Once sufficient water accumulated region electric field termination structure HEXFET, perturbation that field begins degrade breakdown characteristics device. second failure mode that been observed cathodic corrosion Aluminum source bonding pad. with first failure mode, water will ingress die. There, presence applied bias, electric current through monolayers water will begin cause bond dissolve. Eventually, corrosion will proceed point where current capability device impaired parameters such RDS(on) begin increase become unstable. dominance either these failure modes basically determined amount bias present during test.
MATRIX QUALIFICATION PHILOSOPHY
matrix qualification philosophy uses homogeneous nature switch designs. part types given family technology typically consist identical structures replicated hundreds thousands times across surface surrounded electric field termination structure. illustrate philosophy matrix qualification, analysis HEXFET power MOSFET presented. Certain HEXFET power transistors made with small that have hundred cells. Other devices have large with thousands cells. this product family, HEXFET design fundamentally same from part type another. There small variations thickness various layers, which must considered. chips' lengths widths also vary. principal, however, devices should same those environmental stress tests used qualification. matrix qualification philosophy allows exploit homogeneity family. given environmental test, there will specific part type from family which been found expected found have highest failure rate. This considered worst case part. example, larger more susceptible thermomechanical stress, larger gate surface area (and hence higher probability TDDB failure), larger surface area field termination structure greater target opportunity micro contaminant effects tests which apply higher rated static reverse bias voltages (drain-to-source) have higher probabilities failure. higher probability failure higher field strength general). Within given family given test, there part type which would expected least amount stress. This part would considered best case part. example would smallest family with lowest rating. Once have identified worst case best case part number, given test, test data these part numbers "bracket" rest part types within family. best worst case parts pass qualification, then other part types within family considered qualified similarity. have chosen family members well, then this approach rational from reliability physics perspective. selecting families family members correctly.
CRITICAL HEXFET ATTRIBUTES CONSIDERATION MATRIX QUALIFICATION
fundamental requirement application matrix qualification philosophy identifying critical HEXFET attributes. Once critical attributes have been identified, follows that best case worst case part types appropriate reliability tests established every category. necessary that point show part types that qualified based best worst case part types. When this complete, next final step perform actual testing, collect relevant data present results. consideration reliability HEXFETs this report will focus only part types manufactured HEXFET America subcontractors. most significant distinction that arises part family: TO-220, D-Pak, HEXDIP HEXSENSE. most part, reliability families mutually exclusive based differences packaging. each part family, there aspects reliability that must assessedpackage level reliability level reliability. These categories establish foundation matrix testing. Further evaluation categories leads specific concerns involved appropriate reliability tests assess performance. With advent generations HEXFET dice, some design changes give rise necessity presenting data each generation independently. Where this becomes necessity, part types identified additional worst case devices. LEVEL Concern Field Distortion presence polar molecules, such water ionic contaminants from atmosphere, passivation surface along edge die, will distort electric field when high voltage applied MOSFET, giving increased local leakage current possible eventual thermal runaway. Failures occur random wearout region, accelerated high temperature reverse bias (HTRB). critical factor involved with HTRB test field strength that applied device termination structure selected bias. Ideally, want apply maximum possible bias each device create highest possible stress thus maximize field strength. best case device with lowest voltage rating type family because bias applied HTRB test creates lowest field strength.
test dielectric strength gate oxide, rated gate voltage applied gate several hundreds hours while elevated junction temperatures. This will accelerate what known timedependent dielectric breakdown (TDDB) gate structure. There four variables involved stress test given generation HEXFET die. They bias applied, junction temperature applied, duration stress thickness gate oxide. worst case device this test highly flexible. Since basic structure gates remains same part types family, would take worst case device that device that subjected greatest field strength highest temperature. Further, would seem that there difference between logic level devices (with gate thickness order standard HEXFET (gate oxide thickness around however, logic level stressed standard (duration junction temperature being same). Since determining factor stress test field strength follows that: logic level standard product, they same. other words, under given conditions, there difference between logic-level standard HTGB test. Nonetheless, logic gate stress data presented satisfaction customer requirements. PACKAGE LEVEL Concern Attach Fatigue attach fatigue normally caused differential thermal expansion between header different thermal expansion coefficients silicon header material. This shows cracking separation voiding attach, resulting degraded onresistance and/or thermal fatigue. Additionally, HEXSENSE devices experience degradation/failure current sensing (ratio) capability. These failures largely occur wearout region. susceptibility given attach thermal fatigue normally ascertained with thermomechanical stress test (power cycling unbiased temperature cycling). best case device that which least amount internal physical stress imposed package, therefore would smallest size family.
short circuits instability device parameters. Wire bond defects tested thermomechanical stress test (power cycling unbiased temperature cycling). best case device that which smallest bond wires over nonactive area bond pad. This usually smallest, size family that greater than rated (all devices, p-channel, lower, active area bonded). worst case device with largest bond wires multiple bond wires (i.e. source wires) placed over active area. This usually device with largest size family. Concern Metal Corrosion Under environmental stress conditions humidity/temperature/bias, expected that packaged non-hermetic package will susceptible predominating failure modes: excess leakage currents under reverse bias will increase point causing parametric failure IDSS cathodic corrosion internal metallization will result parametric shift on-resistance, RDS(on) eventually resulting open circuit condition. cause both these phenomena ingression water into plastic package from ambient atmosphere chip surface, forming external surface leakage paths. This lead excessive drain current eventually parametric failure. Internal package stresses promote moisture ingression corrupting integrity mold compound allowing moisture paths occur. application reverse bias under blocking conditions result cathodic corrosion source bond pad. corrosion proceeds, aluminum source slowly dissolves causing intermittent continuity between source wire metallization chip. Eventually, continuity goes altogether device presents open circuit. best case device that which smallest with lowest voltage rating. worst case device that which largest (primary factor) with highest voltage rating (secondary factor; both channel).
Long Term Reliability Test Results Transistors
4.1.1 High Temperature Reverse Bias
Power MOSFETs
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 5.5E+07 1.1E+07 6.6E+07 2.1E+07 8.2E+06 8.2E+06 8.2E+06 4.1E+07 4.1E+07 4.1E+07 1.7E+08 4.1E+07 7.9E+06 6.0E+06 5.9E+06 5.9E+06 3.0E+06 5.9E+06 5.9E+06 5.9E+06 5.0E+06 2.5E+06 5.9E+06 5.9E+06 5.9E+06 5.9E+06 6.7E+06 3.0E+06 3.0E+06 3.0E+06 3.0E+06 8.8E+07 4.1E+07 4.2E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 2.5E+08 4.1E+07 4.1E+07 4.1E+07 8.5E+06 4.1E+07 4.1E+07 4.3E+06 4.1E+07 4.1E+07 4.1E+07 4.8E+07 8.6E+05 8.6E+05 4.8E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 6.1E+08 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 5.1E+06 4.1E+07 4.5E+07 4.7E+07 4.1E+07 4.8E+07 8.5E+06 8.5E+06 4.5E+08 8.5E+06 Failure Rate FITs
D2Pak (TO-263) TO-262: P-channel
IRF9Z24NS IRF9Z24NL Total IRF3704S IRL3803L IRL3803L IRF1404L IRF3205L IRF3205L IRF1312S Total IRF8010SJS IRFBC40L IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 IRF6602 IRF6604 IRF6607 IRF6607 IRF6607 Total IRFR5505 IRFR9024N IRFR9120N IRFU9210 IRFU9220 IRFU9220 Total IRF3711 IRFR3711 IRLR7811W IRLR7811W IRLR7833 IRLR7833AA IRLR8503 IRLR8503 IRLU7821 IRLU7833 IRFR3504 IRFR2405 IRFR2405 IRFR3505 IRLR3105 IRFR2407 IRFR2407 IRFU3418 Total IRFR120 IRFR3410 IRFR3411 IRFR530N IRFR530V IRLU110 IRFU24N15D IRFU24N15D IRFU15N20D IRFU12N25D IRFU12N25D IRFU420A IRFU430A Total IRFRC20
1249 1008
1000 1000
1066 1066
D2Pak (TO-263) TO-262: N-channel, Voltage
1000 1000 1000 1000 1000 1000 1000
D2Pak (TO-263) TO-262: N-channel, Voltage D2Pak (TO-263) TO-262: N-channel, High Voltage Direct
1000 1000 1020 1013 1013 1000 1000 1000 1564 1013 1013 1013 1000 1564
D-Pak I-Pak (TO-252): P-channel
1000 1000 1000 1000 1000 1000
D-Pak I-Pak (TO-252): N-channel, Voltage
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1168 1168 1000 1000 1000 1000
D-Pak I-Pak (TO-252): N-channel, Mid-Voltage
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
D-Pak I-Pak (TO-252): N-channel, High-Voltage
1000
Flip Chip Devices, P-channel
IRF6100 IRF6100 IRF6100 Total
0046 0046 0046
1000 1000
4.5E+06 9.0E+06 9.0E+06 2.2E+07
Flip Chip Devices, N-channel
IRF6156 IRF6156 IRF6156 Total
3.2E+06 3.2E+06 3.2E+06 9.6E+06
Power MOSFETs (continued)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 8.5E+06 4.1E+07 4.6E+06 4.1E+07 8.7E+07 2.1E+07 7.0E+08 7.2E+08 8.5E+06 8.5E+06 1.7E+07 4.3E+06 4.3E+06 8.6E+06 Failure Rate FITs
TO-220 Fullpack, P-channel TO-220 Fullpack, N-channel, Voltage
IRFI9630G IRFI3205 IRFIZ44N IRFIZ34E Total IRLI520N IRLI3615 Total IRFIBF20G IRFIBF20G Total IRLML6302 IRLML6302
1000 1000 1000 1000
TO-220 Fullpack, N-channel, Voltage
1000
1000 1000
TO-220 Fullpack, N-channel, High Voltage
1000 1000
Micro-3, P-channel
1000 1000
Micro-3, N-channel
IRLML2402 IRLML2502 IRLML2502 Total IRF7233 IRF7233 IRF7404 IRF7404 IRF7314 IRF7205 Total IRF6216 IRF6217 Total IRF7476 IRF7101 IRF7101 IRF7311 IRF7311 IRF7403 IRF7413 IRF7413A IRF7413A IRF7455 IRF7811A IRF7811W IRF7822 IRF7822 IRF7822 IRL7821 IRF7484 IRF7484 IRF7341Q IRF7491 IRF7380 Total IRF7474 IRF7490 IRF7492 IRF7492 IRF7492 IRF7492 IRF7492 IRF3000 Total IRLL3303 IRLL014N IRFL014 IRLL014 Total
1160
1000 1000 1000
4.3E+06 4.3E+06 4.3E+06 1.3E+07 2.1E+06 2.1E+06 4.3E+06 4.3E+06 2.2E+06 4.3E+06 1.9E+07 8.5E+06 8.5E+06 1.7E+07 8.5E+06 1.1E+06 1.1E+06 1.1E+06 1.1E+06 4.3E+06 4.3E+06 2.1E+06 2.1E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 4.1E+07 8.5E+06 4.3E+06 1.6E+08 8.5E+06 4.1E+07 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 1.0E+07 1.0E+08 4.3E+06 4.3E+06 4.3E+06 4.1E+07 5.4E+07
SO-8, P-channel, Voltage
1000 1000 1000 1000 1000 1000
SO-8, P-channel, Voltage
1000 1000
SO-8, N-channel, Voltage
22.4
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
SO-8, N-channel, Voltage
1000 1000 1000 1000 1000 1000 1000 1000
SOT-223, N-channel, Voltage
1000 1000 1000 1000
SOT-223, N-channel, Voltage
IRFL4310 IRFL4310 IRFL4310 FB180SA10 IRFL4315 IRFL4315 IRFL214 FA57SA50LC Total
1000 1000 1000 1000 1000 1000
Parametric shift ionic contamination Parametric shift ionic contamination
4.3E+06 4.5E+06 4.5E+06 4.5E+05 8.5E+06 8.5E+06 5.0E+06 5.9E+05 3.6E+07
2015 1558
Power MOSFETs (continued)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 2.0E+07 4.1E+07 4.1E+07 1.0E+08 Failure Rate FITs
Super TO-220, N-channel
IRLBA3803P IRFBA90N20D IRFBA90N20D Total
1000 1000 1000
Super TO-247, N-channel
IRFPS32N60K IRFPS39N60K Total
1000 1000
8.5E+06 8.5E+06 1.7E+07
TO-220, P-channel
IRF9620
1000
8.5E+06
TO-220, N-channel, Voltage
IRF3711 IRL3803 IRF1404 IRF1404 IRF1404 IRF1404 IRF1404 IRF2804 IRF2804 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRL1404 IRF1405 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRFZ44N IRFZ44V IRFZ44V IRFZ46N IRFZ48V IRF1407 IRF2807 IRF2807 IRF2807 IRF3808 IRF3808 IRF3808 IRF3808 IRF3808 IRF3808 IRF3808 Total
3394
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1072 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 2.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.4E+07 4.1E+07 3.9E+07 4.1E+07 4.1E+07 4.1E+07 2.5E+06 2.5E+06 4.1E+07 4.1E+07 1.0E+07 3.4E+07 3.4E+07 2.1E+07 2.7E+07 3.4E+07 2.3E+07 1.7E+07 4.1E+07 2.6E+07 4.1E+07 2.5E+06 4.1E+07 4.1E+07 4.1E+07 2.5E+07 1.8E+07 4.1E+07 4.1E+07 1.6E+09
TO-220, N-channel, Voltage
IRLC120V IRF3710 IRF3710 IRF3710 IRF3710 IRL110V IRL540V IRFB52N15D IRF630N IRF640N IRFB38N20D IRF644N IRF644N IRF820 IRFB5N50K Total
1141
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Parametric shift assembly anomaly
4.1E+07 3.9E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 2.5E+06 4.1E+07 4.1E+07 5.1E+07 4.8E+07 5.0E+06 8.5E+06 5.3E+08
TO-220, N-channel, High Voltage
IRFB16N60K IRFB9N60A Total
1000 1000
8.5E+06 8.5E+06 1.7E+07
TO-247, N-channel, Voltage
IRFP4004 IRFP4004 IRFP054 IRFP064 IRFP2707 IRFP2907 IRFP2907 IRFP2907 Total
1000 1000 1000 1000 1000 1000 1000 1000
4.1E+07 4.1E+07 4.1E+07 4.3E+07 4.1E+07 4.1E+07 4.1E+07 4.1E+07 3.3E+08
Power MOSFETs (continued)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 4.1E+07 4.1E+07 4.1E+07 4.4E+07 8.5E+06 8.5E+06 8.5E+06 2.5E+06 3.0E+07 4.1E+07 9.1E+06 3.6E+06 4.1E+07 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 3.8E+08 Failure Rate FITs
TO-247, N-channel, Voltage
IRFP4510 IRFP4510 IRFP4710 IRFP250N IRFP260 IRFP260 IRFP260 IRFP260N IRFP90N20D IRFP90N20D IRFP9240 IRFP9240 IRFP264N IRFP450N IRFP460 IRFP460 IRFP460 IRFP460A IRFP460A IRFP460N Total
-100
1577
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
TO-247, N-channel, High Voltage
IRFP21N60K IRFP27N60K IRFPG50 Total
1000 1000 1000
8.5E+06 8.5E+06 6.6E+06 2.4E+07
TSOP-6, P-channel
IRLMS6802
1000
Parametric shift excessive drain-source leakage
4.3E+06
IRLMS6702 IRLMS6802 IRLMS6802 Total
1000 1000 1000
4.3E+06 4.3E+06 4.3E+06 1.7E+07
IGBT's
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 8.5E+06 8.5E+06 1.7E+07 Failure Rate FITs
D2Pak (TO-263) TO-262
IRGS4B60KD1 IRGS4B60KD1 Total
1000 1000
D-Pak
IRG4RC20F IRG4RC10UD Total
1000 1000
8.5E+06 8.5E+06 1.7E+07
TO-220 Fullpack
IRGIB10B60K IRGIB10B60K IRGIB10B60K IRGIB15B60K IRGIB10B60KD Total
1000 1000 1000 1000 1000
4.0E+07 4.0E+07 4.0E+07 8.5E+06 4.0E+07 1.7E+08
SOT-227
GA100NA60U GA200SA60U Total
6.3E+05 6.3E+05 1.3E+06
1461 1461
TO-220
IRG4BC10SD IRGB15B60KD IRGB15B60KD IRGB15B60KD IRGB15B60KD Total
1000 1000 1000 1000 1000
4.3E+06 8.5E+06 8.5E+06 8.5E+06 8.5E+06 3.8E+07
TO-247
IRG4PH50U IRG4PC50S-P IRGP50B60PD1 IRGP50B60PD1 IRGP50B60PD1 Total
1000 1016 1000 1000 1000
4.9E+06 8.3E+06 8.5E+06 8.5E+06 8.5E+06 3.88E+07
4.1.2 High Temperature Gate Bias
Power MOSFETs
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 4.32E+07 5.29E+06 5.69E+08 2.69E+06 6.20E+08 Failure Rate FITs
D2Pak (TO-263) TO-262: Standard Gate
IRFZ444NS IRFZ44NL IRF1312S IRFBC40L Total
1000 1000 1000 1000
21.2 173.1 340.7
D2Pak (TO-263) TO-262:
IRFSL38N20D IRFSL38N20D Total
2.76E+06 2.76E+06 5.52E+06
331.8 331.8 165.9
Direct Logic Level
IRF6607 IRF6604 IRF6607 IRF6607 Total
Parametric shift silicon anomaly
1.74E+06 1.74E+06 1.74E+06 1.74E+06 6.94E+06
1164.9 527.8 527.8 527.8 291.2
Direct Standard Gate
IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 Total
1000 1014 1013 1000 1000 1564 1013 1013 1000 1564
Parametric shift silicon anomaly
3.43E+06 1.63E+07 1.63E+07 1.74E+06 3.43E+06 3.43E+06 2.93E+06 1.45E+06 1.63E+07 1.63E+07 3.43E+06 3.90E+06 8.90E+07
589.4 56.1 56.1 526.8 267.1 267.1 313.1 629.9 56.1 56.1 267.1 234.8 22.7
D-Pak I-Pak (TO-252): Logic Level
IRLR7811W IRLR7811W IRLR8503 IRLR8503 Total
1000 1000 1000 1000
9.20E+06 4.99E+06 2.03E+09 5.69E+08 2.61E+09
99.5 183.6
D-Pak I-Pak (TO-252): Standard Gate
IRF3711 IRLR7833 IRLU7821 IRFR120 IRFR3412 IRFUC20 IRFU24N15D IRFU15N20D IRFU12N25D IRFU420A IRFU430A Total
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
4.27E+07 4.32E+07 5.69E+08 1.64E+07 4.32E+07 4.46E+06 1.64E+07 1.64E+07 1.64E+07 8.91E+06 8.91E+06 7.86E+08
21.5 21.2 55.7 21.2 205.6 55.7 55.7 55.7 102.8 102.8
D-Pak I-Pak (TO-252): P-channel, Standard Gate
IRFR5505 IRFR9024N IRFU9210 IRFU9220 IRFU9220 Total
1000 1000 1000 1000 1000
4.32E+07 4.32E+07 1.64E+07 1.64E+07 1.64E+07 1.36E+08
21.2 21.2 55.7 55.7 55.7
Flip Chip Devices: Logic Level
IRF6156 IRF6156 IRF6156 Total
1.02E+07 1.02E+07 1.02E+07 3.06E+07
89.9 89.9 89.9 30.0
Flip Chip Devices: P-channel, Logic Level
IRF6100 IRF6100 IRF6100 Total
0046 0046 0046
1000 1000
1.53E+07 2.89E+07 2.89E+07 7.31E+07
59.9 31.7 31.7 12.5
TO-220 Fullpack: Standard Gate
IRLI520N IRLI520N IRLI3615 Total
1000 1000 1000
4.15E+07 7.84E+07 1.57E+08 2.77E+08
22.1 11.7
TO-220 Fullpack:
IRFIB5N50L
1000
8.91E+06
102.8
Power MOSFETs (continued)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 1.54E+08 1.54E+08 1.54E+08 9.94E+07 5.62E+08 Failure Rate FITs
Micro-3: Logic Level
IRLML2402 IRLML2502 IRLML2502 IRLML6302 Total
1000 1000 1000
SO-8: Logic Level
IRF7811A IRF7811W IRF7822 IRF7822 IRF7822 Total
1000 1000 1000 1000 1000
4.99E+06 2.20E+07 2.34E+07 2.34E+07 2.34E+07 9.73E+07
183.6 41.7 39.1 39.1 39.1
SO-8: Standard Gate
IRF7403 IRF7413 IRL7821 IRF7484 IRF7484 IRF7491 IRF7380 IRF7492 IRF7492 IRF7492 IRF7492 IRF7492 IRF3000 IRF7341Q Total
1000
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
1.54E+08 1.40E+07 2.34E+07 5.72E+04 5.72E+04 8.91E+06 3.08E+07 8.91E+06 8.91E+06 2.79E+06 2.79E+06 2.79E+06 8.91E+06 5.75E+03 2.67E+08
65.3 39.1 16009.9 16009.9 102.8 29.7 102.8 102.8 327.9 327.9 327.9 102.8 159337.7
SO-8: P-channel, Logic Level
IRF7404 IRF7314 Total
1000 1000
1.54E+08 7.01E+06 1.61E+08
130.7
SO-8: P-channel, Standard Gate
IRF7205 IRF6216 IRF6217 Total
1000 1000 1000
1.54E+08 2.34E+07 2.34E+07 2.01E+08
39.1 39.1
SOT-223: Logic Level
IRLL014
1000
1.43E+10
SOT-223: Standard Gate
IRLL3303 IRLL014N IRFL014 IRFL014 IRFL4310 IRFL4310 IRFL214 Total
1000 1000 1000 1000 1000 1000 1000
4.25E+07 4.25E+07 1.64E+07 4.46E+06 1.54E+08 1.54E+08 8.10E+07 4.96E+08
21.6 21.6 55.7 205.6 11.3
SOT-223:
IRFL4315 IRFL4315 Total
1000 1000
2.79E+06 2.79E+06 5.59E+06
327.9 327.9 164.0
SOT-227: Standard Gate
FB180SA10 FA57SA50LC Total
4.46E+05 1.70E+05 6.15E+05
2056.1 5405.7 1489.5
Super-220:
IRFBA90N20D IRFBA90N20D Total
1000 1000
1.64E+07 1.64E+07 3.29E+07
55.7 55.7 27.9
Super TO-247:
IRFPS35N50L
1000
8.91E+06
102.8
TO-220: Logic Level
IRLZ44 IRLZ44 Total
1000 1000
8.91E+06 8.91E+06 1.78E+07
102.8 102.8 51.4
Power MOSFETs (continued)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 5.00E+07 1.14E+08 1.14E+08 1.11E+08 1.14E+08 1.14E+08 2.16E+07 2.65E+07 1.14E+08 2.56E+07 1.76E+07 4.32E+07 4.32E+07 4.32E+07 4.32E+07 1.64E+07 1.64E+07 1.64E+07 1.64E+07 1.06E+09 Failure Rate FITs
TO-220: Standard Gate
IRL2910 IRF2804L IRF3205 IRF3205 IRF3205 IRF3205 IRFZ44N IRFZ46N IRF3808 IRF3808 IRF3808 IRF3808 IRL110V IRL110V IRLC120V IRF640N IRF644N IRF740 IRF740 Total
1414
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Parametric shift assembly anomaly
18.3 42.4 34.6 35.8 52.0 21.2 46.8 21.2 21.2 55.7 55.7 55.7 55.7
TO-220:
IRFB38N20D IRFB5N50K IRFB16N60K Total
1000 1000 1000
1.64E+07 8.91E+06 8.91E+06 3.43E+07
55.7 102.8 102.8 26.7
TO-220: P-channel, Standard Gate
IRF9Z34 IRF9Z34 IRF9620 Total
1000 1000 1000
8.91E+06 8.91E+06 8.91E+06 2.67E+07
102.8 102.8 102.8 34.3
TO-247: Standard Gate
IRFP4004 IRFP4004 IRFP4004 IRFP4004 IRFP054 IRFP2707 IRFP4510 IRFP4510 IRFP4510 IRFP260 IRFP260 IRFP260 IRFP264N IRFP460 IRFP460 IRFPG50 IRFPG50 Total
1357
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
4.32E+07 4.32E+07 4.32E+07 4.32E+07 1.64E+07 1.14E+08 4.32E+07 4.32E+07 4.32E+07 8.91E+06 8.91E+06 8.91E+06 1.64E+07 8.91E+06 8.91E+06 8.91E+06 8.58E+06 5.11E+08
21.2 21.2 21.2 21.2 55.7 21.2 21.2 21.2 102.8 102.8 102.8 55.7 102.8 102.8 102.8 106.8
TO-247:
IRFP90N20D IRFP90N20D IRFP17N50L IRFP23N50L IRFP450N IRFP460A IRFP460LC IRFP460N Total
1000 1000 1000 1000 1000 1000 1000 1000
1.64E+07 1.64E+07 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.64E+07
55.7 55.7 102.8 102.8 102.8 102.8 102.8 102.8 10.6
TSOP-6: Logic Level
IRLMS6702 IRLMS6802 IRLMS6802 IRLMS6802 IRLMS6802 Total
1000 1000 1000 1000 1000
1.54E+08 1.54E+08 1.54E+08 1.54E+08 1.54E+08 7.71E+08
IGBTs
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 8.91E+06 8.91E+06 8.91E+06 2.67E+07 Failure Rate FITs
D2Pak (TO-263) TO-262
IRGS4B60KD1 IRGS4B60KD1 IRGS4B60KD1 Total
1000 1000 1000
102.8 102.8 102.8 34.3
TO-220 Fullpack
IRG4IBC30S IRGIB10B60KD IRGIB15B60KD IRGIB6B60KD Total
1000 1000 1000 1000
6.80E+06 1.58E+07 1.58E+07 1.58E+07 5.43E+07
134.8 57.9 57.9 57.9 16.9
Solderable TO-247
IRG4PC60FP IRG4PC60UP IRG4PC60UP Total
1000 1000 1000
8.91E+06 8.91E+06 8.91E+06 2.67E+07
102.8 102.8 102.8 34.3
SOT-227
GA100NA60U GA200SA60U Total
1.70E+05 1.70E+05 3.39E+05
5405.7 5405.7 2702.9
Super TO-247
IRGPS40B120U IRGPS60B120KD IRGPS60B120KD IRGPS60B120KD Total
1000 1000 1000 1000
8.91E+06 8.91E+06 8.69E+06 8.91E+06 3.54E+07
102.8 102.8 105.4 102.8 25.9
TO-220
IRG4BC20U IRG4BC20U IRG4BC30U IRG4PC50U IRG4PC50U IRG4BC10UD IRG4BC10UD IRG4BC20UD IRG4BC30FD IRGB15B60KD IRGB15B60KD IRGB15B60KD IRGB5B120KD IRGB5B120KD Total
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Parametric shift mechanical damage
5.57E+06 5.57E+06 5.57E+06 5.57E+06 5.57E+06 4.46E+06 4.46E+06 4.12E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 9.44E+07
363.0 164.5 164.5 164.5 164.5 205.6 205.6 222.3 102.8 102.8 102.8 102.8 102.8 102.8 21.4
TO-247
IRG4PC60F IRG4PC50U IRG4PC60F IRG4PC60U IRG4PC60U IRG4PC50S-P IRGP30B60KD IRGP50B60KDE IRGP50B60KDE IRGP50B60PD1 IRGP50B60PD1 IRGP50B60PD1 IRGP20B120UDE IRGP30B120KDE Total
1087
1000 1000 1000 1000 1002 1000 1000 1000 1000 1000 1000 1000 1000
Catastrophic gate electrical overstress
8.91E+06 5.57E+06 4.46E+06 8.91E+06 8.91E+06 2.69E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 8.91E+06 1.11E+08
226.9 164.5 205.6 102.8 102.8 340.0 102.8 102.8 102.8 102.8 102.8 102.8 102.8 102.8 18.3
4.1.3 Temperature Cycling
Power MOSFETs
Category Part Number Date Code Temperature Excursion -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C Applied Voltage Test Quantity 1107 Test Duration failures Failure mode failures failures failures 1000
D2Pak (TO-263) TO-262
IRF1312S IRF1404L IRF1404L IRF1404L IRF1404L IRF1404S IRF1404S IRF1404S IRF1404S IRF1404S IRF2804L IRF2804L IRF640NS IRF8010SJS IRF9Z24NS IRFZ44NL IRFZ44NS IRFZ44VS IRL3803S IRL3803S Total
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Direct
IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 IRF6602 IRF6604 IRF6607 IRF6607 IRF6607 Total
-40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125 -40/125
1000 1000 1000 1000 1087 1000 1000
D-Pak I-Pak (TO-252)
IRF3711 IRFR120 IRFR12N25D IRFR15N20D IRFR2405 IRFR2405 IRFR2407 IRFR2407 IRFR24N15D IRFR3410 IRFR3412 IRFR3412 IRFR3711 IRFR5505 IRFR9024N IRFR9120N IRFU3418 IRFU420A IRFU430A IRFUC20 IRLR024N IRLR120N IRLR3103 IRLR3103 IRLR7821 IRLR8503 IRLU110 IRLU7833 IRLU7833 IRLU7833 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
2257
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 3000 3000 3000
Parametric shift ionic contamination
Parametric shift attach degradation
Flip Chip Devices
IRF6100 IRF6100 IRF6100 IRF6100 IRF6100 IRF6100 IRF6156 IRF6156 IRF6156 Total
0046 0046 0046
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -40°C/125°C -40°C/125°C -40°C/125°C
Power MOSFETs (continued)
Category Part Number Date Code Temperature Excursion -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C Applied Voltage Test Quantity Test Duration failures Failure mode failures failures failures 1000
TO-220 Fullpack
IRFI3205 IRFI510V IRFI520V IRFI9630G IRFIB5N50L IRFIBF20G IRFIBF20G IRFIZ34E IRLI3803 IRLI3803 IRLI520N IRLI520N Total
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Micro-3
IRLML2402 IRLML2502 IRLML2502 IRLML2803 IRLML6302 IRLML6302 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000
Micro-8
IRF7601
-55°C/150°C
1000
Parametric shift attach degradation
SO-8
IRF3000 IRF6216 IRF6217 IRF7233 IRF7233 IRF7404 IRF7404 IRF7413 IRF7413 IRF7455 IRF7484 IRF7484 IRF7490 IRF7491 IRF7492 IRF7492 IRF7492 IRF7492 IRF7492 IRF7807 IRF7811A IRF7811W IRL7821 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1780
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
SO-8 Dual
IRF7101 IRF7101 IRF7311 IRF7311 IRF7314 IRF7380 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000
SOT-223
IRFL014 IRFL214 IRFL4310 IRFL4310 IRFL4310 IRFL4315 IRFL4315 IRFL4315 IRLL014 IRLL014N IRLL3303 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
SOT227
FA57SA50LC FB180SA10 Total
-40°C/125°C -40°C/125°C
Super TO-220
IRFBA90N20D IRLBA3803P IRLBA3803P IRLBA3803P Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000
Super TO-247
IRFPS32N60K IRFPS35N50L IRFPS39N60K Total
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
Power MOSFETs (continued)
Category Part Number Date Code Temperature Excursion -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C Applied Voltage Test Quantity 3679 Test Duration failures Failure mode failures failures failures 1000
TO-220
IRF1010N IRF1404 IRF1404 IRF1404 IRF1404 IRF1404L IRF1404L IRF1405 IRF1407 IRF2804 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3710 IRF3710S IRF3711 IRF3711 IRF3808 IRF3808 IRF3808 IRF520V IRF540N IRF640N IRF9620 IRFB16N60K IRFB52N15D IRFB5N50K IRFB9N60A IRFBG30 IRFBG30 IRFBG30 IRFZ24N IRFZ24N IRFZ44N IRFZ44V IRFZ44V IRL1404 IRL1404 IRL1404 IRL2203N IRL3714 IRL3715 IRL3715 IRL3803 Total
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
TO-247
IRFP054 IRFP064 IRFP064 IRFP064N IRFP064N IRFP13N60L IRFP17N50L IRFP21N60K IRFP23N50L IRFP250N IRFP260 IRFP260 IRFP260 IRFP264N IRFP27N60K IRFP2907 IRFP2907 IRFP2907 IRFP2907 IRFP2907 IRFP4004 IRFP4004 IRFP4004 IRFP450N IRFP4510 IRFP4510 IRFP460 IRFP460 IRFP460 IRFP460 IRFP460A IRFP460LC IRFP460N IRFP460Z IRFP4710 IRFP90N20D IRFP90N20D Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
2856
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Parametric shift ionic contamination
TSOP-6
IRLMS6702 IRLMS6802 IRLMS6802 IRLMS6802 IRLMS6802 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000
IGBTs
Category Part Number Date Code Temperature Excursion -55°C/150°C -55°C/150°C -55°C/150°C Applied Voltage Test Quantity Test Duration failures Failure mode failures failures failures 1000
D2Pak (TO-263) TO-262
IRGS4B60KD1 IRGS4B60KD1 IRGS4B60KD1 Total
1000 1000 1000
D-Pak I-Pak (TO-252)
IRG4RC10UD
-55°C/150°C
1000
TO-220 Fullpack
IRG4IBC30S IRG4IBC30W IRGIB10B60K IRGIB10B60K IRGIB10B60K Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000
Soldereable TO-247
IRG4PC60FP IRG4PC60UP IRG4PC60UP Total
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
SOT-227
GA100NA60U GA200SA60U Total
-40°C/125°C -40°C/125°C
Super TO-247
IRGPS40B120U IRGPS60B120KD IRGPS60B120KD IRGPS60B120KD Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000
Super To-247 Co-Pak
IRG4PSC71UD IRG4PSC71UD IRG4PSC71UD Total
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
TO-220
IRG4BC20F IRG4BC20F IRG4BC20U IRG4BC30U IRG4PC50U IRG4PC50U Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000
TO-220 Co-Pak
IRG4BC10SD IRG4BC10UD IRG4BC20UD IRG4BC30FD IRG4BC30KD IRGB5B120KD IRGB5B120KD IRGB5B120KD Total IRG4PC50S-P IRG4PC50U IRG4PC60F IRG4PC60U IRG4PC60U IRG4PC60U IRG4PC60U IRG4PH50U IRGP20B120U IRGP20B120U IRGP30B120K Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000 1000 1000
TO-247
-55/150 -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1014 1000 1000 1000 1000 2000 2000 1000 1000 1000
TO-247 Co-Pak
IRG4PC30FD IRGP30B60KD IRGP50B60KDE IRGP50B60KDE IRGP50B60PD1 IRGP50B60PD1 IRGP50B60PD1 Total
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000 1000
4.1.4 Power Cycling
Power MOSFETs
Category Part Number Date Code Junction Temperature Excursion 100°C 100°C 100°C 150°C 100°C 100°C 100°C 100°C Applied Voltage Test Quantity Test Duration failures Failure mode failures midpoint failures test
D2Pak (TO-263) TO-262
IRF1312S IRF1404S IRF1404S IRF1404S IRF840S IRFZ44VS IRL3803S IRL3803S Total
8572 8572 8572 1000 8572 8572 8572 8572
D-Pak I-Pak (TO-252)
IRF3711 IRFR2407 IRFU24N15D IRLR3103 IRLR3103 IRLR7811W IRLR7821 IRLR7833AA IRLU7833 Total
100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C
15000 15000 20648 15000 15000 15000 15000 15000 15000
TO-220 Fullpack
IRFI520V IRFIB5N50L Total
100°C 100°C
8572 8572
SO-8
IRF6216 IRF6217 IRF7484 IRF7492 Total
100°C 100°C 100°C 100°C
15000 15000 16000
SOT-223
IRFL4315 IRLL014 Total FA57SA50LC FB180SA10 Total IRFBA23N50L IRFBA90N20D IRFBA90N20D Total IRFPS35N50L IRFPS35N50L Total IRF1405 IRF1407 IRF2804 IRF2804L IRF3205 IRF3205 IRF3205 IRF3711 IRF3808 IRF520V IRFB16N60K IRFB38N20D IRFB52N15D IRFB5N50K IRL1404 Total
100°C 100°C
1130 1427
15000 15000
SOT-227
100°C 100°C
2500 2500
Super TO-220
100°C 100°C 100°C
8572 5000 5000
Super TO-247
100°C 100°C
5000 2500
TO-220
100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C
8572 8572 8572 8572 8572 8572 8572 8572 8572 8572 8572 8572 8572 4886 8572
Parametric shift random mechanical damage
TO-247
IRFP054 IRFP064 IRFP064N IRFP064N IRFP23N50L IRFP260 IRFP260 IRFP264N IRFP2907 IRFP2907 IRFP2907 IRFP4510 IRFP4510 IRFP4510 IRFP460A IRFP460N IRFP90N20D IRFP90N20D Total
100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C 100°C
5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 4370 3045 5000
IGBTs
Category Part Number Date Code Junction Temperature Excursion 100°C 85/85 100°C 100°C 100°C 100°C 100°C Applied Voltage Test Quantity Test Duration failures Failure mode failures midpoint failures test
TO-247
IRG4PC50S-P IRG4PC50S-P IRG4PC60F IRG4PC60U IRG4PC60U IRGP20B120U IRGP30B120K Total
5000 5000 5000 5000 5000 5000
TO-247 Co-Pak
IRGP30B60KD IRGP50B60KDE IRGP50B60KDE IRGP50B60PD1 IRGP50B60PD1 IRGP50B60PD1 Total
100°C 100°C 100°C 100°C 100°C 100°C
5000 5000 5854 5000 5000 5000
D2Pak (TO-263) TO-262 Co-Pak
IRGS4B60KD1 IRGS4B60KD1 Total
100°C 100°C
8572 8572
TO-220 Fullpack
IRGIB10B60K
100°C
8572
Solderable TO-247
IRG4PC60FP IRG4PC60UP Total
100°C 100°C
5000 5000
Parametric shift ionic contamination
SOT-227
GA100NA60U GA200SA60U Total
100°C 100°C
2500 2500
Super TO-247
IRGPS40B120U IRGPS60B120KD IRGPS60B120KD IRGPS60B120KD Total
100°C 100°C 100°C 100°C
5000 5000 5000 5000
Super TO-247 Co-Pak
IRG4PSC71UD IRG4PSC71UD IRG4PSC71UD Total
100°C 100°C 100°C
5000 5000 5000
TO-220 Co-Pak
IRG4BC30FD IRGB5B120KD IRGB5B120KD Total
100°C 100°C 100°C
2971 8572 8572
4.1.5 High Humidity, High Temperature Reverse Bias (H3TRB)
Power MOSFETs
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
D2Pak (TO-263) TO-262: N-channel
IRF1312S IRF1404L IRF3205L IRF3205L IRF3704S IRF530NL IRF8010SJS IRFBC40L IRFSL3808 IRFSL3808 IRFZ44VS IRL3803L IRL3803L Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
D2Pak (TO-263) TO-262: P-channel
IRF9Z24NL
85°C/85%RH
1000
Direct
IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6601 IRF6602 IRF6602 IRF6602 IRF6602 IRF6604 IRF6607 IRF6607 IRF6607 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1001 1001 1001 1007 1007 1007
Parametric shift silicon anomaly
Parametric shift assembly anomaly
D-Pak I-Pak (TO-252)
IRF3711 IRFR110 IRFR120 IRFR220N IRFR2407 IRFR2407 IRFR3410 IRFR3411 IRFR3412 IRFR3504 IRFR3505 IRFR3711 IRFR530V IRFRC20 IRFU12N25D IRFU15N20D IRFU24N15D IRFU3418 IRFU420A IRFU430A IRLR024N IRLR3103 IRLR3103 IRLR3105 IRLR7811W IRLR7811W IRLR7821 IRLR7833 IRLR7833AA IRLR8503 IRLU7821 IRLU7833 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
2388
1024 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 2000
parametric shift excessive gate leakage
D-Pak I-Pak (TO-252)
IRFR5505 IRFR9024N IRFR9120N Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
Flip Chip Devices: N-channel
IRF6156 IRF6156 IRF6156 IRF6156 IRF6156 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
Power MOSFETs (continued)
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
Flip Chip Devices: P-channel
IRF6100 IRF6100 IRF6100 Total
0046 0046 0046
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000
TO-220 Fullpack
IRFI510V IRFI520V IRFIB5N50L IRFIZ24V IRLI3615 IRLI3803 IRLI3803 IRLI520N Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000 1000 1000
Micro-3: N-channel
IRLML2402 IRLML2502 IRLML2502 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
Micro-3: P-channel
IRLML6302 IRLML6302 Total
85°C/85%RH 85°C/85%RH
1000 1000
SO-8: N-channel
IRF3000 IRF7413 IRF7413A IRF7455 IRF7476 IRF7484 IRF7490 IRF7491 IRF7492 IRF7492 IRF7492 IRF7492 IRF7811A IRF7811W IRL7821 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1157
1000 1000 1000 1000 1000 1000 1000 1000 1024 1000 1000 1000 1000 1000 1000
SO-8: P-channel
IRF6216 IRF6217 IRF7205 IRF7233 IRF7233 IRF7404 IRF7404 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
2753
1000 1000 1000 1000 1000 1000
SO-8 Dual: N-channel
IRF7101 IRF7101 IRF7311 IRF7311 IRF7380 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000
SO-8 Dual: P-channel
IRF7314
85°C/85%RH
1000
SOT-223
IRFL014 IRFL4310 IRFL4315 IRFL4315 IRFL4315 IRLL014 IRLL014N IRLL3303 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000 1000 1000
SOT-227
FA57SA50LC FB180SA10 Total
85°C/85%RH 85°C/85%RH
Super TO-220
IRFBA23N50L IRFBA90N20D IRLBA3803P Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
Super TO-247
IRFPS35N50L IRFPS39N60K IRFPS40N50L Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000
Power MOSFETs (continued)
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
TO-220
IRF1404 IRF1404 IRF1407 IRF2804 IRF2804L IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3710 IRF3710 IRF3710 IRF3710S IRF3711 IRF3711 IRF3808 IRF3808 IRF3808 IRF3808 IRF3808 IRF3808 IRF520V IRF634 IRF640N IRF644N IRF644N IRF740 IRF740 IRFB11N50A IRFB16N60K IRFB38N20D IRFB4710 IRFB4710 IRFB52N15D IRFB5N50K IRFB9N60A IRFZ24N IRFZ44N IRL1404 IRL3803 IRL640 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
3172
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1052 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
TO-247
IRFP054 IRFP064N IRFP13N60L IRFP17N50L IRFP21N60K IRFP260 IRFP260 IRFP264N IRFP27N60K IRFP2907 IRFP2907 IRFP2907 IRFP2907 IRFP2907 IRFP4004 IRFP4004 IRFP450N IRFP4510 IRFP4510 IRFP460 IRFP460 IRFP460 IRFP460A IRFP460A IRFP460N IRFP90N20D IRFP90N20D IRFP9240 IRFP9240 IRFPG50 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
-100
2397
1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000
Parametric shift ionic contamination
TSOP-6: P-channel
IRLMS6702 IRLMS6802 IRLMS6802 IRLMS6802 IRLMS6802 IRLMS6802 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000
IGBT's
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
TO-247
IRG4PC50S-P IRG4PC60F IRG4PC60U IRG4PC60U IRG4PH50U Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000
TO-247 Co-Pak
IRG4PC30FD IRGP20B120UDE IRGP30B120KDE IRGP30B60KD IRGP50B60PD1 IRGP50B60PD1 IRGP50B60PD1 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000 1000
Parametric shift ionic contamination
D2Pak (TO-263) TO-262
IRGS4B60KD1 IRGS4B60KD1 IRGS4B60KD1 Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
D-Pak I-Pak (TO-252)
IRG4RC10UD IRG4RC20F Total
85°C/85%RH 85°C/85%RH
1000 1000
TO-220 Fullpack
IRGIB10B60K IRGIB10B60K IRGIB10B60K Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
Parametric shift ionic contamination
TO-220 Fullpack Co-Pak
IRGIB15B60KD IRG4IBC20UD
85°C/85%RH 85°C/85%RH
1000 1000
parametric shift excessive drain source leakage
Total
Solderable TO-247
IRG4PC60FP IRG4PC60UP IRG4PC60UP Total
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
SOT-227
GA100NA60U GA200SA60U Total
85°C/85%RH 85°C/85%RH
TO-220
IRG4BC20F IRG4BC20F IRG4BC20U IRG4BC20U IRG4BC30U Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000
TO-220 Co-Pak
IRG4BC30FD IRG4BC30UD IRGB15B60KD IRGB15B60KD IRGB5B120KD IRGB5B120KD Total
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000
4.1.6 Autoclave
Power MOSFETs
Category Part Number Date Code Environment Conditions 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG Applied Voltage Test Quantity 1034 Test Duration failures Failure mode
D2Pak (TO-263) TO-262
IRF5210S IRF5210S IRF740LCS IRF740LCS IRF8010SJS IRF9540NS IRF9540NS IRFZ44NS IRFZ44VS IRF2804L IRF2804L IRFSL3808 IRFSL3808 IRFZ44NL
D-Pak I-Pak (TO-252)
IRF3711 IRFR120 IRFR2405 IRFR2405 IRFR2407 IRFR2407 IRFR3411 IRFR3412 IRFR3504 IRFR3505 IRFR3711 IRFR5505 IRFR9024N IRLR024N IRLR3103 IRLR3103 IRLR3105 IRLR7811W IRLR7833 IRLR7833AA IRLR8503 IRFU15N20D IRFU24N15D IRFU3418 IRFU420A IRFU430A IRFUC20 IRLU7821 IRLU7833
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
2143
TO-220 Fullpack
IRFI3205 IRFI510V IRFI520V IRFI9630G IRFIB5N50L IRFIBF20G IRFIBF20G IRFIZ24V IRLI3803 IRLI3803 IRLI520N IRLI520N IRLI520N
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Power MOSFETs (continued)
Category Part Number Date Code Environment Conditions 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG Applied Voltage Test Quantity Test Duration failures Failure mode
Micro-3
IRLML2402 IRLML2502 IRLML2502 IRLML6302 IRLML6302
SO-8
IRF3000 IRF6216 IRF6217 IRF7403 IRF7455 IRF7484 IRF7491 IRF7492 IRF7811A IRL7821
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
SO-8 Dual
IRF7314 IRF7380
121°C/15PSIG 121°C/15PSIG
SOT-223
IRFL014 IRFL014 IRFL214 IRFL4310 IRFL4310 IRFL4310 IRFL4315 IRFL4315 IRFL4315 IRLL2705
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Super TO-220
IRFBA23N50L IRFBA90N20D IRFBA90N20D IRLBA3803P
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Super TO-247
IRFPS35N50L
121°C/15PSIG
Power MOSFETs (continued)
Category Part Number Date Code Environment Conditions 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG Applied Voltage Test Quantity 2255 Test Duration failures Failure mode
TO-220
IRF1404 IRF1404 IRF1405 IRF1407 IRF2804 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3205 IRF3711 IRF3808 IRF3808 IRF520V IRF730 IRF840 IRF9620 IRFB16N60K IRFB38N20D IRFB4710 IRFB4710 IRFB52N15D IRFB5N50K IRFBE30 IRFZ24N IRFZ44N IRL1404 IRL1404 IRL3803 IRL520N
TO-247
IRFP064 IRFP064N IRFP17N50L IRFP23N50L IRFP250N IRFP260 IRFP260 IRFP264N IRFP2907 IRFP2907 IRFP2907 IRFP2907 IRFP4004 IRFP4004 IRFP450N IRFP4510 IRFP4510 IRFP460 IRFP460 IRFP460 IRFP460N IRFP4710 IRFP90N20D IRFP90N20D IRFPE50
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
1922
IGBTs
Category Part Number Date Code Environment Conditions 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG Applied Voltage Test Quantity Test Duration failures Failure mode
D2Pak (TO-263) TO-262
IRGS4B60KD1 IRGS4B60KD1 IRGS4B60KD1
D-Pak I-Pak (TO-252)
IRG4RC10UD
121°C/15PSIG
TO-220 Fullpack
IRGIB10B60K IRGIB10B60K IRGIB10B60K
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Solderable TO-247
IRG4PC60FP IRG4PC60UP IRG4PC60UP
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Super TO-247
IRGPS40B120U IRGPS60B120KD IRGPS60B120KD IRGPS60B120KD IRG4PSC71UD IRG4PSC71UD IRG4PSC71UD
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
TO-220
IRG4BC20F IRG4BC20F IRG4BC20U IRG4BC20U IRG4BC30U IRG4PC50U IRG4PC50U
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
TO-220 Co-Pak
IRG4BC10UD IRG4BC20KD IRG4BC30FD IRG4BC30UD IRGB20B60PD IRGB5B120KD IRGB5B120KD IRGB5B120KD
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
TO-247
IRG4PC50S-P IRG4PC60F IRG4PC60U IRG4PC60U IRG4PF50W IRG4PH40U IRG4PH50U IRGP30B120K
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Parametric shift attach degradation
TO-247 Co-Pak
IRG4PC30FD IRG4PC50UD IRGP20B60PD IRGP30B60KD IRGP50B60KDE
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
Diodes
4.2.1 High Temperature Reverse Bias
Schottky
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 2.1E+06 2.0E+06 4.0E+06 Failure Rate FITs
D2Pak (TO-263) TO-262
32CTQ045S MBR20100CT Total
2002 4001
1000 1000
D-61
85CNQ015ASM 87CNQ020A 112CNQ030A 111CNQ045 81CNQ045ASM 83CNQ100A Total
2502 2502 2801 4001 2301 3002
1000 1000 1000 1000 1000 1000
5.6E+05 2.5E+05 4.2E+06 1.3E+06 2.6E+06 2.2E+06 1.1E+07
1641 3611
DO201
31DQ04
2001
1000
5.6E+06
DO204
50SQ100
3701
1000
2.8E+06
DO41
11DQ10
3801
1000
2.0E+06
95HQ015
1902
1000
2.7E+05
3385
D-Pak
MBRB2045CT
3902
1000
1.4E+06
D-Pak
12CWQ06FN
2602
1000
4.2E+06
Flip Chip Devices
IR140CSP IR140CSP Total
3.2E+06 3.2E+06 6.4E+06
MBRA120
4501
1000
3.7E+05
2462
10BQ015 10BQ040 Total
2702 4301
1000 1000
5.6E+05 1.4E+06 2.0E+06
1641
30BQ015 30BQ040 30BQ040 30BQ040 30BQ100 Total
3202 1002 2702 5001 3202
1000 1000 1000 1000 1000
1.9E+05 4.2E+06 4.2E+06 1.4E+06 1.4E+06 1.1E+07
4924
SOD123
MBR0520 MBR0530 Total
4801 4001
1000 1000
1.9E+05 4.2E+06 4.4E+06
4924
SOD323
MBRX540
2002
1000
4.2E+06
SOT223
20CJQ045 20CJQ100 Total
4401 4401
1000 1000
4.2E+06 4.2E+06 8.4E+06
SOT23
BAT54C
4201
1000
4.2E+06
TO-220
19TQ015 42CTQ030 25CTQ045 30CTQ045 30CTQ045 30CTQ045 MBR2045CT 16CTQ100 63CTQ100 Total
4801 1001 2002 1301 4301 2002 4801 1802 3801
1199
1000 1000 1000 1000 1000 1000 1000 1000 1000
1.7E+05 2.6E+06 2.1E+06 1.3E+06 2.6E+06 2.1E+06 2.8E+06 2.8E+06 4.2E+06 2.1E+07
5265
TO-247
65PQ015 80CPT015 72CPQ030 72CPQ030 40CPQ100 Total
4501 1002 1001 5001 4601
1000 1000 1000 1000 1000
7.4E+05 5.6E+05 1.3E+06 1.4E+06 2.6E+06 6.6E+06
1231 1641
MURS120A
0901
1000
2.5E+07
Fast Recovery Epitaxial Diode (FRED)
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 2.5E+07 2.5E+07 1.6E+07 6.6E+07 Failure Rate FITs
TO-220
HFA15TB60 8ETH03 8CTF06 Total
2801 1901 2801
1000 1000 1000
TO-220 Fullpack
15ETH06FP 8ETH06FP Total
0402 0402
1000 1000
8.2E+06 8.2E+06 1.6E+07
TO-247
30EPH03 30EPH06 30EPH06 Total
2201 1201 3401
1000 1000 1000
1.6E+07 1.6E+07 3.3E+07 6.6E+07
D2Pak (TO-263)
HFA04TB60S
3601
1000
8.2E+06
SOT-227
HFA80FA120
4201
1000
2.9E+06
Other Input/Output Devices
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage 2.1E+07 Failure Rate FITs
SCR: D2Pak (TO-263)
25TTS12S
0700
1000
SCR: TO-220
10TTS08
2002
1000
1.2E+07
Input Rectifier: TO-220
20ETS16 20ETS16 Total
1702 1901
1280 1280
1000 1000
8.2E+06 5.3E+06 1.4E+07
Input Rectifier: TO-247
40EPS16
1901
1280
1000
5.3E+06
4.2.2 Temperature Cycling
Schottky
Category Part Number Date Code Temperature Excursion -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C Applied Voltage Test Quantity 1122 Test Duration failures Failure mode failures failures failures 1000
D2Pak (TO-263) TO-262
18TQ045S 20CTQ150S 30CTQ045S 40L15CT 42CTQ030S 43CTQ100 MBRB2045CT Total
0501 1602 1401 4001 0501 4001 2002
1000 1000 1000 1000 1000 1000 1000
D-Pak I-Pak (TO-252)
12CWQ06FN 50WQ04FN Total
2602 2501
-55°C/150°C -55°C/150°C
1000 1000
111CNQ045 112CNQ030A 115CNQ015A 80CNT020ASM 83CNQ100A Total
4001 2801 3001 3902 3002
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000
DO201
31DQ04
2001
-55°C/150°C
1000
DO41
11DQ10 11DQ10 Total
3801 3802
-55°C/150°C -55°C/150°C
1000 1000
55HQ030 95HQ015 Total
4302 1902
-55°C/150°C -55°C/150°C
1000 1000
Flip Chip Devices
IR140CSP IR140CSP IR1H40CSP IR1H40CSP Total
-40°C/125°C -40°C/125°C -40°C/125°C -40°C/125°C
10MQ040N 10MQ100 10MQ100 MBRA120 Total
0701 2001 0202 4501
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1001
1000 1000 1000 1000
10BQ015 10BQ040 10BQ040 Total
2702 3801 4301
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
30BQ015 30BQ040 30BQ040 30BQ100 30BQ100 30BQ100 Total
3202 2702 5001 3202 3801 2001
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1001
1000 1000 1000 1000 1000 1000
SOD123
MBR0520 MBR0540 Total
4801 4401
-55°C/150°C -55°C/150°C
1000 1000
SOD323
BAT54WS MBRX540 Total
4001 2002
-55°C/150°C -55°C/150°C
1000 1000
SOT223
20CJQ045 20CJQ100 Total 62CTQ030 19TQ015 25CTQ045 30CTQ045 MBR20100CT MBR2045CT Total 40CPQ060 30CPQ100 65PQ015 65PQ015 72CPQ030 72CPQ030 80CPT015 80CPTN015 Total
4401 4401
-55°C/150°C -55°C/150°C
1000 1000
TO-220
3801 4801 2002 4301 0301 4801
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000
TO-244 TO-247
2102 0301 4501 3001 1001 5001 1002 2002
-55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000 1000 1000 1000 1000 1000
Fast Recovery Epitaxial Diode (FRED)
Category Part Number Date Code Temperature Excursion -55°C/150°C Applied Voltage Test Quantity Test Duration failures Failure mode failures failures failures 1000
D2Pak (TO-263) TO-262
HFA04TB60S
3601
1000
MURS120A MURS120A Total
0901 1702
-55°C/150°C -55°C/150°C
1000 1000
SOT227
HFA80FA120
4201
-55°C/150°C
1000
TO220
8CTF06 HFA15TB60 Total
2801 2801
-55°C/150°C -55°C/150°C
1000 1000
TO220 Fullpack
15ETH06FP 15ETL06FP 8ETH06FP Total
0402 2302 0402
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
TO-247
30EPH06
1201
-55°C/150°C
1000
Other Input/Output Devices
Category Part Number Date Code Test Temperature Applied Voltage Test Quantity Test Duration failures Failure mode Equivalent device hours rated voltage Failure Rate FITs
SCR: D2Pak (TO-263) TO-262
25TTS12S
0700
-55°C/150°C
1000
Input Rectifier: D2Pak (TO-263) TO-262
20ETS12S
2602
-55°C/150°C
1000
Input Rectifier: D-Pak (TO-252)
8EWS06S 8EWS16S Total
2002 0201
-55°C/150°C -55°C/150°C
1000 1000
Input Rectifier: TO-220
15ETS16 20ETS16 20ETS16 Total
0205 1702 1901
-55°C/150°C -55°C/150°C -55°C/150°C
1000 1000 1000
Input Rectifier: TO-247
40EPS16
1901
-55°C/150°C
1000
4.2.3 Power Cycling
Schottky
Category Part Number Date Code Junction Temperature Excursion 100°C 100°C 100°C 100°C Applied Voltage Test Quantity Test Duration failures Failure mode failures midpoint failures test
TO-247
65PQ015 72CPQ030 80CPT015 80CPTN015 Total
3902 1001 1002 2002
5000 5000 5000 5000
D2Pak (TO-263) TO-262
18TQ045S 20CTQ150S 30CTQ045S 32CTQ045S 42CTQ030S 43CTQ100 MBRB2045CT Total
0501 1602 1401 2002 0501 4001 2002
100°C 100°C 100°C 100°C 100°C 100°C 100°C
8572 8572 8572 8572 8572 8572 8572
113CNQ100ASM 80CNT020ASM 83CNQ100A 89CNQ150ASM Total
3001 3902 3002 3601
100°C 100°C 100°C 100°C
5000 5000 5000 5000
DO204
50SQ100
3701
100°C
15000
95HQ015
2502
100°C
5000
D-Pak I-Pak (TO-252)
12CWQ06FN 50WQ04FN Total
2602 2501
100°C 100°C
15000 15000
10MQ040N 10MQ100 MBRA120 Total
0701 0202 4501
100°C 100°C 100°C
15000 15000 15000
10BQ015 10BQ040 10BQ100 10BQ100 Total
2702 4301 1102 2902
100°C 100°C 100°C 100°C
15000 15000 15000 15000
30BQ015 30BQ040 30BQ100 30BQ100 Total
3202 5001 3202 3801
100°C 100°C 100°C 100°C
15000 15000 15000 15000
SOD123
MBR0520 MBR0540 MBRX540 Total
4801 4401 2002
100°C 100°C 100°C
15000 15000 15000
SOT223
20CJQ045 20CJQ100 BAT54AW Total
4401 4401 4401
100°C 100°C 100°C
15000 15000 15000
Fast Recovery Epitaxial Diode (FRED)
Category Part Number Date Code Junction Temperature Excursion 100°C Applied Voltage Test Quantity Test Duration failures Failure mode failures midpoint failures test
SOT227
HFA80FA120
4201
15000
TO-220
8CTF06 8ETH03 HFA15TB60 20ETS16 Total
2801 1901 2801 1702
100°C 100°C 100°C 100°C
8572 8572 8572 8572
TO-220 Fullpack
15ETH06FP 8ETH06FP Total
0402 0402
100°C 100°C
8572 8572
D2Pak (TO-263) TO-262
HFA04TB60S
3601
100°C
8572
MURS120A
0901
100°C
15000
Other Input/Output Devices
Category Part Number Date Code Junction Temperature Excursion 100°C 100°C Applied Voltage Test Quantity Test Duration failures Failure mode failures midpoint failures test
Input Rectifier: D-Pak I-Pak (TO-252)
8EWS06S 8EWS16S Total
2002 0201
15000 15000
4.2.4 High Humidity, High Temperature Reverse Bias (H3TRB)
Schottky
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
D2Pak (TO-263) TO-262
18TQ045S 42CTQ030S 43CTQ100 Total
0501 0501 4001
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
111CNQ045 112CNQ030A 80CNT020ASM 85CNQ015ASM 87CNQ020A Total
4001 2801 3902 2502 2502
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000
DO201
31DQ04
2001
85°C/85%RH
1000
DO204
50SQ100
3701
85°C/85%RH
1000
DO41
11DQ10
3801
85°C/85%RH
1000
95HQ015
1902
85°C/85%RH
1000
D-Pak I-Pak (TO-252)
50WQ04FN
2501
85°C/85%RH
1000
Flip Chip Devices
IR140CSP IR140CSP Total
85°C/85%RH 85°C/85%RH
10MQ100 MBRA120 Total
2001 4501
85°C/85%RH 85°C/85%RH
1000 1000
10BQ040 10BQ040 10BQ040 10BQ100 Total
3801 2001 4301 2902
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000
30BQ040 30BQ100 30BQ100 Total
5001 3202 3801
85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000
SOD123
MBR0540
4401
85°C/85%RH
1000
SOD323
BAT54WS MBRX540 Total
4001 2002
85°C/85%RH 85°C/85%RH
1000 1000
SOT223
20CJQ045 20CJQ100 Total
4401 4401
85°C/85%RH 85°C/85%RH
1000 1000
SOT323
BAT54AW
4401
85°C/85%RH
1000
TO-220
19TQ015 30CTQ045 30CTQ045 40CPQO45 63CTQ100 MBR20100CT MBR2045CT Total
4801 1301 4301 3401 3801 0301 4801
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000 1000
TO-244
40CPQ060
2102
85°C/85%RH
1000
TO-247
30CPQ100 65PQ015 65PQ015 72CPQ030 72CPQ030 80CPT015 Total
0301 4501 3001 1001 5001 1002
85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH 85°C/85%RH
1000 1000 1000 1000 1000 1000
Fast Recovery Epitaxial Diode (FRED)
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
D2Pak (TO-263) TO-262
HFA04TB60S
3601
85°C/85%RH
1000
SOT-227
HFA80FA120
4201
85°C/85%RH
1000
TO-220
8ETH03 HFA15TB60 Total
1901 2801
85°C/85%RH 85°C/85%RH
1000 1000
TO-220 Fullpack
15ETH06FP 8ETH06FP Total
0402 0402
85°C/85%RH 85°C/85%RH
1000 1000
TO-247
30EPH06
3401
85°C/85%RH
1000
Other Input/Output Devices
Category Part Number Date Code Environment Conditions Applied Voltage Test Quantity Test Duration failures Failure mode failures hours failures hours failures 1000 hours
D-Pak I-Pak (TO-252)
8EWS16S
0201
85°C/85%RH
1000
TO-220
15ETS16 20ETS16 Total
0205 1702
85°C/85%RH 85°C/85%RH
1000 1000
D2Pak (TO-263) TO-262
25TTS12S
0700
85°C/85%RH
1000
TO-220
10TTS08
2002
85°C/85%RH
1000
4.2.5 Autoclave
Schottky
Category Part Number Date Code Environment Conditions 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG Applied Voltage Test Quantity Test Duration failures Failure mode
D2Pak (TO-263) TO-262
32CTQ045S 40L15CT 42CTQ030S MBRB2045CT
2002 4001 0501 2002
112CNQ030A 113CNQ100ASM 80CNT020ASM 83CNQ100A 85CNQ015ASM
2801 3001 3902 3002 2502
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
DO201
31DQ04
3302
121°C/15PSIG
10BQ100 10BQ100
1102 2902
121°C/15PSIG 121°C/15PSIG
30BQ015 30BQ040 30BQ100
3202 1002 3202
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
SOD323
MBRX540
2002
121°C/15PSIG
SOT223
20CJQ045 20CJQ100
4401 4401
121°C/15PSIG 121°C/15PSIG
TO-220
19TQ015 30CTQ045 MBR20100CT MBR2045CT
4801 2002 0301 4801
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
TO-247
65PQ015
4501
121°C/15PSIG
Fast Recovery Epitaxial Diode (FRED)
Category Part Number Date Code Environment Conditions 121°C/15PSIG Applied Voltage Test Quantity Test Duration failures Failure mode
MURS120A
0901
TO-220 Fullpack
15ETH06FP 8ETH06FP
0402 0402
121°C/15PSIG 121°C/15PSIG
TO-247
HFA16TB120
4002
121°C/15PSIG
Other Input/Output Devices
Category Part Number Date Code Environment Conditions 121°C/15PSIG Applied Voltage Test Quantity Test Duration failures Failure mode
D2Pak (TO-263) TO-262
20ETS12S
2602
TO-220
15ETS16 20ETS16 10TTS08
0205 1702 2002
121°C/15PSIG 121°C/15PSIG 121°C/15PSIG
SUMMARY RESULTS: ACCELERATED LIFE STRESS TESTING
current results experiments completed being conducted International Rectifier determine appropriate accelerated life stress models presented following sections. table below lists those experiments which have been completed appear referenced Reliability Reports. Where applicable, values activation energies reported corresponding references included. Acceleration Experiments HTRB Thermal Acceleration HTRB Bias Acceleration Gate Stress- Thermal Acceleration Gate Stress- Bias Acceleration Gate Stress Bias Acceleration (n-channel) Gate Stress Bias Acceleration (p-channel) Power Cycling TO-220 Activation Energy 0.065 MV/cm 0.108 MV/cm 0.048 MV/cm 0.31-0.4
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