ZHCS750 FEATURES: High Current Capability APPLICATIONS: converter

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ZHCS750 FEATURES: High Current Capability APPLICATIONS: converter

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SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT"
ZHCS750
FEATURES: High Current Capability APPLICATIONS: converters Mobile telecomms PCMCIA PARTMARK DETAIL:
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Continuous Reverse Voltage Forward Current (Continuous) Forward Voltage 750mA Average Peak Forward Current; D.C. Repetitive Forward Current t100µs t10ms Power Dissipation Tamb= Storage Temperature Range Junction Temperature SYMBOL IFAV IFSM Ptot Tstg VALUE 1500 UNIT
ELECTRICAL CHARACTERISTICS Tamb unless otherwise stated).
PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL (BR)R MIN. TYP. MAX. UNIT CONDITIONS. 300µA 50mA* 100mA* 250mA* 500mA* 750mA* 1000mA* 1500mA*
Reverse Current Diode Capacitance Reverse Recovery Time
1MHz,V switched from 500mA 500mA Measured 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle
ZHCS750
TYPICAL CHARACTERISTICS
100m
Forward Current
Reverse Current
Typical
+125°C
100µ
+100°C
+50°C
100n
+25°C
+125°C +25°C -55°C
-55°C
0.01
Forward Voltage
Reverse Voltage
IF(av) Average Forward Current
Typical
D=t1/t
PF(av) Average Power Dissipation (mW)
Typical Tj=125°C
F(pk)
D=t1/t F(pk) F(av)=D
F(pk)
D=0.5
F(av)
F(pk)
D=0.2
D=0.5 D=0.2 D=0.1 D=0.05
D=0.1 D=0.05
PF(av)=I F(av)
Case Temperature (°C) IF(av)
IF(av) Average Forward Current PF(av) IF(av)
Typical
Rth=100° Rth=200°C/W Rth=300°
Diode Capacitance (pF)
Ambient Temp
Reverse Voltage
Reverse Voltage
ZHCS750
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE Reference above figure, devices were mounted 15mmx15mm ceramic substrate.

ZHCS750 FEATURES: High Current Capability APPLICATIONS: converter

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