P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRR

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P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRR

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Final data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark reverse recovery temperature influence switching behavior Ideal diode Power Factor Correction 800W forward recovery
P-TO220-2-2.
SDP04S60, SDD04S60 SDT04S60
Product Summary VRRM
P-TO252-3-1.
P-TO220-3-1.
Type SDP04S60 SDD04S60 SDT04S60
Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2.
Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445
Marking D04S60 D04S60 D04S60
n.c.
n.c.
Value 12.5 0.78 36.5
Unit
Maximum Ratings, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C forward current, f=50Hz
TC=25°C, tp=10ms
IFRMS
Surge repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX i2dt VRRM VRSM Ptot Tstg
repetitive peak forward current
tp=10µs, TC=25°C
value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating storage temperature
-55. +175
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
Values min. typ. max. Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction case Thermal resistance, junction ambient, leaded version, device PCB:
P-TO263-3-2: min. footprint P-TO263-3-2: cooling area P-TO252-3-1: min. footprint P-TO252-3-1: cooling area
Symbol
RthJC RthJA RthJA
Electrical Characteristics, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=4A, Tj=25°C IF=4A, Tj=150°C
Symbol min.
Values typ. max.
Unit
1000
Reverse current
R=600V, j=25°C R=600V, j=150°C
1CCM, 85VAC, 150°C, =100°C, 93%, 2Device 40mm*40mm*1.5mm epoxy with (one layer, thick) copper area drain connection. vertical without blown air.
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
Unit max.
Electrical Characteristics, unless otherwise specified Parameter Symbol Values min. Characteristics Total capacitive charge
R=400V, IF=4A, diF/dt=200A/µs, j=150°C
typ. n.a.
Switching time
R=400V, IF=4A, diF/dt=200A/µs, j=150°C
Total capacitance
R=0V, C=25°C, f=1MHz R=300V, C=25°C, f=1MHz R=600V, C=25°C, f=1MHz
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
Power dissipation Ptot (TC)
Diode forward current (TC) parameter: Tj175
Ptot
Typ. forward characteristic (VF) parameter:
Typ. forward power dissipation average forward current PF(AV)=f(IF) TC=100°C, tp/T
-40°C 25°C 100°C 125°C 150°C
PF(AV)
d=0.1 d=0.2 d=0.5
IF(AV)
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
Typ. reverse current reverse voltage R=f(VR)
Transient thermal impedance ZthJC parameter
SDP04S60
ZthJC
25°C 100°C 125°C 150°C
0.50
0.20 0.10 single pulse 0.05 0.02 0.01
Typ. capacitance reverse voltage parameter:
Typ. stored energy EC=f(V
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
Typ. capacitive charge current slope c=f(diF /dt) parameter:
IF*2
*0.5
A/µs 1000
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
P-TO220-3-1 P-TO220-3-1
dimensions symbol 9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95 [mm] 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374 [inch] 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
2.54 typ. 4.30 4.50 1.17 2.30 1.40 2.72
typ. 0.1693 0.1772 0.0461 0.0906 0.0551 0.1071
P-TO252 (D-Pak)
dimensions symbol 2.19 0.76 0.90 5.97 9.40 0.46 0.87 0.51 5.00 4.17 0.26 6.40 5.25 (0.65) 0.63 2.28 2.39 0.98 1.21 6.23 10.40 0.58 1.15 1.02 [mm] 6.73 5.50 (1.15) 0.89 0.2520 0.2067 0.0248 inch] 0.2650 0.2165 0.0350
(0.0256) (0.0453) 0.2520 0.0862 0.0941 0.0299 0.0354 0.2350 0.3701 0.0181 0.0343 0.0201 0.1969 0.1642 0.0102 0.0386 0.0476 0.2453 0.4094 0.0228 0.0453 0.0402
Page
2004-02-11
Final data
SDP04S60, SDD04S60 SDT04S60
TO-220-2-2
dimensions symbol 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 [inch] 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
1.05 typ. 2.54 typ. typ. 1.10 1.40 typ. typ. 13.0 typ. typ. 0.00 0.40
0.41 typ. typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
Page
2004-02-11
Final data
Published Infineon Technologies Bereichs Kommunikation St.-Martin-Strasse D-81541 Infineon Technologies 1999 Rights Reserved.
SDP04S60, SDD04S60 SDT04S60
Attention please! information herein given describe certain components shall considered warranted characteristics. Terms delivery rights technical change reserved. hereby disclaim warranties, including limited warranties non-infringement, regarding circuits, descriptions charts stated herein. Infineon Technologies approved CECC manufacturer. Information further information technology, delivery terms conditions prices please contact your nearest Infineon Technologies Office Germany Infineon Technologies Reprensatives worldwide (see address list). Warnings technical requirements components contain dangerous substances. information types question please contact your nearest Infineon Technologies Office. Infineon Technologies Components only used life-support devices systems with express written approval Infineon Technologies, failure such components reasonably expected cause failure that life-support device system, affect safety effectiveness that device system Life support devices systems intended implanted human body, support and/or maintain sustain and/or protect human life. they fail, reasonable assume that health user other persons endangered.
Page
2004-02-11

P-TO220-2-2. SDP04S60, SDD04S60 SDT04S60 Product Summary VRR

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