Shottky barrier diode RSX201L-30 Application High efficient

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Shottky barrier diode RSX201L-30 Application High efficient

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RSX201L-30
Shottky barrier diode
RSX201L-30
Application High efficient shottky barrier diode. Rectifier power supply units. Battery protection against reversal current External dimensions (Unit
CATHODE MARK 1.5±0.2
1.2±0.3
Features Small mold type power diode (PMDS (4526) High reliability (ESD resistance typ=22kV (machine model) (VF=0.39V IR=50µA 30V)
2.6±0.2
4.5±0.2
0.1±0.02
2.0±0.2
ROHM PMDS EIAJ Manufacturing date EX2003.9 JEDEC
5.0±0.3
Structure Silicon Epitaxial Planer
Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward peak surge current (60Hz 1cyc.) Junction temperature Storage temperature Symbol IFSM Tstg Limits Unit
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Electro static discharge resistance Symbol Min. Typ. 0.39 Max. 0.44 Unit Conditions IF=2A VR=30V VR=10V, f=1MHz C=200pF, 1pulse
RSX201L-30
Electrical characteristic curves (Ta=25°C)
10000 100000
FORWARD CURRENT (mA)
REVERSE CURRENT (µA)
1000
Ta=150°C Ta=125°C Ta=75°C Ta=25°C -25°C
10000 1000
Ta=125°C
TERMINAL CAPACITANCE (pF)
Ta=150°C
10000
f=1MHz Ta=25°C
Ta=75°C
1000
Ta=25°C
-25°C
FORWARD VOLTAGE (mV)
REVERSE VOLTAGE
REVERSE VOLTAGE
Fig.1 Forward Temperature Characteristics
Fig.2 Reverse Temperature Characteristics
Fig.3 Capacitance Between Terminals Characteristics
AVERAGE RECTIFIED FOWARD CURRENT
PMDS (j-a) =94°C When mounted glass epoxy board.
AVERAGE RECTIFIED FOWARD CURRENT
1000
(=180)
(j-a)
VR=15V Tj=150°C
(=180)
VR=15V Tj=150°C
1000
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
Fig.4 Thermal resistance
Fig.5 Derating curve (IO-Ta)
Fig.6 Derating curve (IO-Tc)
Ta=25°C
30kV Over
8.3ms 8.3ms 1cyc.
(kV)
IFSM
Ta=25°C 1pulse
200pF
Machine Model
100pF 1.5k
Humanbody Model
(Cyc)
Fig.7 Forward peak surge current (Acctual data)
Fig.8 resistance
Appendix
Notes
technical content pages this document reproduced form transmitted means without prior permission ROHM CO.,LTD. contents described herein subject change without notice. specifications product described this document reference only. Upon actual use, therefore, please request that specifications separately delivered. Application circuit diagrams circuit constants contained herein shown examples standard operation. Please careful attention peripheral conditions when designing circuits deciding upon circuit constants set. data, including, limited application circuit diagrams information, described herein intended only illustrations such devices specifications such devices. ROHM CO.,LTD. disclaims warranty that such devices shall free from infringement third party's intellectual property rights other proprietary rights, further, assumes liability whatsoever nature event such infringement, arising from connected with related such devices. Upon sale such devices, other than buyer's right such devices itself, resell otherwise dispose same, express implied right license practice commercially exploit intellectual property rights other proprietary rights owned controlled ROHM CO., LTD. granted such buyer. Products listed this document silicon basic material. Products listed this document antiradiation design.
products listed this document designed used with ordinary electronic equipment devices (such audio visual equipment, office-automation equipment, communications devices, electrical appliances electronic toys). Should intend these products with equipment devices which require extremely high level reliability malfunction with would directly endanger human life (such medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers other safety devices), please sure consult with sales representative advance. About Export Control Order Japan Products described herein objects controlled goods Annex (Item Export Trade Control Order Japan. case export from Japan, please confirm applies "objective" criteria "informed" MITI clause) basis "catch controls Non-Proliferation Weapons Mass Destruction.
Appendix1-Rev1.0

Shottky barrier diode RSX201L-30 Application High efficient

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