BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product sp

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BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product sp

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BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs
Product specification 2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
FEATURES Short channel transistor with high forward transfer admittance input capacitance ratio noise gain controlled amplifier Excellent frequency noise performance Partly internal self-biasing circuit ensure good cross-modulation performance during good stabilization. APPLICATIONS Gain controlled noise amplifiers digital analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source substrate interconnected. Integrated diodes between gates source protect against excessive input voltage surges. BF1212, BF1212R BF1212WR encapsulated SOT143B, SOT143R SOT343R plastic packages respectively.
BF1212; BF1212R; BF1212WR
PINNING source drain gate gate DESCRIPTION
handbook, columns
view
MSB014
BF1212; marking code:
Fig.1 Simplified outline (SOT143B).
handbook, columns
handbook, halfpage
view BF1212R; marking code:
MSB035
MSB842
view BF1212WR; marking code:
Fig.2 Simplified outline (SOT143R).
Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA SYMBOL Ptot Cig1-ss Crss Xmod PARAMETER drain-source voltage drain current total power dissipation forward transfer admittance input capacitance gate reverse transfer capacitance noise figure cross-modulation junction temperature input level CONDITIONS MIN. TYP. MAX. UNIT dBµV
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
CAUTION This product supplied anti-static packing prevent damage caused electrostatic discharge during transport handling. further information, refer Philips specs.: SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF1212 BF1212R BF1212WR DESCRIPTION plastic surface mounted package; leads plastic surface mounted package; reverse pinning; leads plastic surface mounted package; reverse pinning; leads VERSION SOT143B SOT143R SOT343R
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Ptot PARAMETER drain-source voltage drain current (DC) gate current gate current total power dissipation BF1212; BF1212R BF1212WR Tstg Note temperature soldering point source lead. THERMAL CHARACTERISTICS SYMBOL BF1212; BF1212R BF1212WR PARAMETER thermal resistance from junction soldering point VALUE UNIT storage temperature junction temperature note note +150 CONDITIONS MIN. MAX. UNIT
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
MDB828
Ptot (mW)
(°C)
BF1212WR. BF1212; BF1212R.
Fig.4 Power derating curve.
STATIC CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)DSS PARAMETER drain-source breakdown voltage CONDITIONS VG1-S VG2-S VG2-S IG1-S VG1-S IG2-S VG2-S IS-G1 VG1-S IS-G2 VG2-S VG1-S VG2-S note VG2-S VG1-S VG1-S VG2-S MIN. 0.35 MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-S IG2-S Note connects forward source-gate voltage forward source-gate voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate cut-off current gate cut-off current
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
DYNAMIC CHARACTERISTICS Common source; Tamb VG2-S unless otherwise specified. SYMBOL Cig1-ss Cig2-ss Coss Crss PARAMETER forward transfer admittance input capacitance gate input capacitance gate output capacitance noise figure MHz; MHz; (opt) MHz; (opt) power gain MHz; (opt); (opt) MHz; (opt); (opt) MHz; (opt); (opt) Xmod cross-modulation input level MHz; funw MHz; note Note Measured test circuit Fig.21. dBµV dBµV dBµV CONDITIONS pulsed; MIN. TYP. MAX. UNIT
reverse transfer capacitance
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
MLE233
handbook, halfpage
MLE234
(mA)
(mA)
VG1-S VG2-S VG2-S VG2-S VG2-S VG2-S VG2-S VG2-S
VG1-S VG1-S VG1-S VG1-S VG1-S
VG1-S VG1-S VG1-S VG1-S
VG2-S
Fig.5 Transfer characteristics; typical values.
Fig.6 Output characteristics; typical values.
handbook, halfpage
MLE235
handbook, halfpage
MLE236
(µA)
(mS)
VG1-S
(mA)
VG2-S VG2-S VG2-S VG2-S
VG2-S VG2-S VG2-S
VG2-S VG2-S VG2-S VG2-S
VG2-S VG2-S VG2-S
Fig.7
Gate current function gate voltage; typical values.
Fig.8
Forward transfer admittance function drain current; typical values.
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
MLE237
handbook, halfpage
MLE238
(mA)
(mA)
(µA)
VG2-S
VG2-S (connected VGG); Fig.21.
Fig.9
Drain current function gate current; typical values.
Fig.10 Drain current function gate supply voltage; typical values.
handbook, halfpage
MLE239
(mA)
handbook, halfpage
MLE240
(mA)
VG2-S connected VGG; Fig.21.
VG2-S
(connected VGG); Fig.21.
Fig.11 Drain current function gate drain supply voltage; typical values.
Fig.12 Drain current function gate voltage; typical values.
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
MLE241
handbook, halfpage
MLE242
(µA)
gain reduction (dB)
VG2-S
VAGC
(connected VGG); Fig.21.
(connected VGG); Fig.21; MHz; Tamb
Fig.13 Gate current function gate voltage; typical values.
Fig.14 Typical gain reduction function voltage.
handbook, halfpage
MLE243
handbook, halfpage
MLE244
Vunw (dBµV)
(mA)
gain reduction (dB)
gain reduction (dB)
(connected VGG); Fig.21; MHz; funw MHz; Tamb
(connected VGG); Fig.21; MHz; Tamb
Fig.15 Unwanted voltage cross-modulation function gain reduction; typical values.
Fig.16 Drain current function gain reduction; typical values.
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage (mS)
MLE245
handbook, halfpage (µS)
MLE246
-103 (deg) -102
10-1
(MHz)
(MHz)
Tamb
Tamb
Fig.17 Input admittance function frequency; typical values.
Fig.18 Reverse transfer admittance phase functions frequency; typical values.
handbook, halfpage
MLE247
-102
handbook, halfpage
MLE248
(mS)
(deg)
(mS)
(MHz) 10-1 (MHz)
Tamb
Tamb
Fig.19 Forward transfer admittance phase functions frequency; typical values.
Fig.20 Output admittance function frequency; typical values.
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, full pagewidth
VAGC
RGEN
MGS315
Fig.21 Cross-modulation test set-up.
Table (MHz) 1000 Table
Scattering parameters: VG2-S Tamb MAGNITUDE (ratio) 0.990 0.988 0.983 0.974 0.969 0.958 0.947 0.936 0.924 0.910 0.896 ANGLE (deg) -3.39 -6.76 -13.40 -19.86 -26.46 -32.73 -38.83 -44.75 -50.51 -56.18 -61.64 MAGNITUDE (ratio) 3.288 3.280 3.261 3.218 3.205 3.141 3.086 3.017 2.949 2.870 2.785 ANGLE (deg) 176.5 173.0 166.1 159.0 152.6 145.9 139.5 133.1 126.9 120.5 114.7 MAGNITUDE (ratio) 0.0005 0.0011 0.0021 0.0030 0.0039 0.0045 0.0049 0.0051 0.0051 0.0049 0.0045 ANGLE (deg) 86.9 85.6 81.2 77.5 74.6 72.4 70.9 69.5 69.9 69.8 72.7 MAGNITUDE (ratio) 0.990 0.990 0.991 0.991 0.994 0.994 0.993 0.991 0.981 0.984 0.980 ANGLE (deg) -1.66 -3.30 -6.62 -9.92 -13.30 -16.56 -19.77 -22.78 -25.77 -28.72 -31.77
Noise data: VG2-S Tamb (MHz) Fmin (dB) (ratio) 0.695 0.634 (deg) 13.87 30.30 28.5 32.85
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
PACKAGE OUTLINES Plastic surface mounted package; leads
BF1212; BF1212R; BF1212WR
SOT143B
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT143B
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
Plastic surface mounted package; reverse pinning; leads
SOT143R
detail
scale
DIMENSIONS original dimensions) UNIT 0.48 0.38 0.88 0.78 0.15 0.09 0.55 0.25 0.45 0.25
OUTLINE VERSION SOT143R
REFERENCES JEDEC EIAJ SC-61B
EUROPEAN PROJECTION
ISSUE DATE 97-03-10 99-09-13
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
Plastic surface mounted package; reverse pinning; leads
SOT343R
detail
scale
DIMENSIONS original dimensions) UNIT 0.25 0.10 1.35 1.15 1.15 0.45 0.15 0.23 0.13
OUTLINE VERSION SOT343R
REFERENCES JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2003
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
BF1212; BF1212R; BF1212WR
DEFINITION This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Preliminary data Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2003
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2003
SCA75
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
R77/02/pp15
Date release: 2003
Document order number:
9397 12308

BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product sp

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