Oscillator provided monolithic control with adopting On-ChipTrimming t
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IRIS-G5653
Oscillator provided monolithic control with adopting On-ChipTrimming technology. Small temperature characteristics variation adopting comparator compensate temperature control part. start-up circuit current (100uA max) Built-in Active Low-Pass Filter stabilizing operation case light load Avalanche energy guaranteed MOSFET with high VDSS built-in power MOSFET simplifies surge absorption circuit since MOSFET guarantees avalanche energy. VDSS de-rating required. Built-in constant voltage drive circuit Built-in step drive circuit Built-in frequency mode (20kHz) Various kinds protection functions Pulse-by-pulse Overcurrent Protection (OCP) Overvoltage Protection with latch mode (OVP) Thermal Shutdown with latch mode (TSD)
INTEGRATED SWITCHER
Package Outline
TO-220 Fullpack Lead)
Specifications
Type IRIS-G5653 MOSFET VDSS(V) RDS(ON) input(V) 230±15% Pout(W) Note
Descriptions
IRIS-G5653A hybrid consists from power MOSFET controller designed Indirect feed-back QuasiResonant (including frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This realizes high efficiency, noise, downsizing standardizing power supply system reducing external components count simplifying circuit designs. (Note). abbreviation "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G5600
OCP/FB
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IRIS-G5653A
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced terminals stated, currents defined positive into lead. thermal resistance power dissipation ratings measured under board mounted still conditions.
Symbol IDpeak IDMAX
Definition Drain Current Maximum switching current
Terminals Max. Ratings
Units
Note Single Pulse V2-3=0.78V Ta=-20~+125 Single Pulse VDD=99V, L=20mH peak=2.6A
Tstg
Single pulse avalanche energy Input voltage control part O.C.P/F.B voltage Power dissipation MOSFET Power dissipation control part (Control Internal frame temperature operation Operating ambient temperature Storage temperature Channel temperature
+125 +125 +125
With infintite heatsink
Without heatsink Specified
Refer recommended operating temperature
Refer A.S.O curve Tch-EAS curve Refer Ta-PD1 curve Refer TF-PD2 curve Control (See page Maximum switching current.
Fig.1
V2-3
maximum switching current Drain current determined drive voltage threshold voltage (Vth) FET. Therefore, event that voltage drop occurs between patterning, maximum switching current decreases shown V2-3 Fig.1 Accordingly please this device within decrease value, referring derating curve maximum switching current.
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IRIS-G5653A
Electrical Characteristics (for Control
Electrical characteristics control part (Ta=25, Vin=18V,unless otherwise specified)
Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Tth(2) TOFF(MIN) Vth(1) Vth(2) IOCP/FB Vin(OVP) Iin(H) Vin(La.OFF) Tj(TSD) Vin(SENSE)
Definition Operation start voltage Operation stop voltage Circuit current operation Circuit current non-operation Maximum time Minimum time input quasi resonant signals Minimum time O.C.P/F.B threshold voltage O.C.P/F.B threshold voltage O.C.P/F.B extraction current O.V.P operation voltage Latch circuit sustaining current Latch circuit release voltage Thermal shutdown operating temperature Detected Voltage Temperature coefficient detected voltage
14.4 0.68 31.7
Ratings 0.73 1.45 1.35 36.5
17.6 0.78 32.3
Units µsec µsec µsec
Test Conditions
Vin=017.6V Vin=17.69V
Vin=14V
Vin=039.0V Vin=39.08.5V Vin=39.06.6V
Vin=31.732.3V Vin=31.732.3V
Recommended operating conditions Tth(2)1.0sec Time iunput quasi resonant signals O.C.P/F.B quasi resonant signal inputted OCP/FB Vth(2) time quasi resonant operation, signal shall wider thant Tth(2). minimum time means TOFF width time when minimum quasi resonant signal inputted. latch circuit means circuit operated O.V.P T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol VDSS IDSS
Definition Drain-to-Source breakdown voltage Drain leakage current
Ratings
Units nsec
Test Conditions
ID=300µA =0V(short) =650V V3-2=0V(short) V3-2=10V ID=1.2A
RDS(ON) On-resistance Switching time ch-F Thermal resistance
Between channel internal frame
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IRIS-G5653A
IRIS-G5653
IRIS-G5653
A.S.O. temperature derating coefficient curve
MOSFET A.S.O. Curve
A.S.O. temperature derating coefficient[%]
Drain CurrentD
Drain current limit resistance
0.1ms
temperature derating shall made obtaining Coefficient from left curve your use.
0.01 n-to-Source tage 1000
Internal frame temperature
IRIS-G5653
Maximum Switching current derating curve 20+125
IRIS-G5653 Avalanche energy derating curve
Maximum Switchng Current IDMAX[A]
temperature derating coefficient[%]
V2-3
Channel temperature
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IRIS-G5653A
IRIS-G5653 MOSFET Ta-PD1 Curve
PD1=26[W]
IRIS-G5653 TF-PD2 Curve
PD2=0.8[W]
With infinite heatsink
Power dissipation D2[W]
Power dissipation D1[W]
Without heatsink PD1=1.5[W]
Ambient temperature Ta[]
Internal frame temperature TF[]
IRIS-G5653 Transient thermal resistance curve
Transient thermal resistance ch-c[/W]
0.01
0.001
100µ
[sec]
100m
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IRIS-G5653A Block Diagram
START REG. T.S.D
O.V.P.
LATCH DRIVE
Vth(1)
OCP/FB
O.S.C
Vth(2)
Lead Assignments
Symbol OCP/FB
Description Drain Source Ground Power supply Overcurrent Feedback
Function MOSFET drain MOSFET source Ground Input power supply control circuit Input overcurrent detection signal constant voltage control signal
Other Functions
O.V.P. Overvoltage Protection Circuit T.S.D. Thermal Shutdown Circuit
OCP/FB
STEP step drive circuit
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IRIS-G5653A
Case Outline
±0.2 ±0.2 ±0.2
±0.2
±0.2 16.9 ±0.3
IRIS
±0.1 ±0.5 2-(R1) ±0.5
0.94 ±0.15 0.85 -0.1
+0.2
R-end
(4.6) 0.45 -0.1
+0.2
4xp1.7±0.1=(6.8)
5.08 ±0.6
±0.2
aType Number G5653A bLot Number letterThe last digit year letterMonth Jan. Sept., Oct. Nov. Dec. letterDay Arabic Numerals
Weight Approx. 2.3g Dimensions DWG.No.TG3A-1128
Material Treatment plating solder
Data specifications subject change without notice.
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