M3D088 PBSS8110T VCEsat (BISS) transistor Product specificat

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M3D088 PBSS8110T VCEsat (BISS) transistor Product specificat

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book, halfpage
M3D088
PBSS8110T VCEsat (BISS) transistor
Product specification Supersedes data 2003 2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
FEATURES SOT23 package collector-emitter saturation voltage VCEsat High collector current capability: Higher efficiency leading less heat generation Reduced printed-circuit board requirements. APPLICATIONS Major application segments Automotive power Telecom infrastructure Industrial Power management DC/DC converters Supply line switching Battery charger backlighting. Peripheral drivers Driver supply voltage applications (e.g. lamps LEDs). Inductive load driver (e.g. relays, buzzers motors). DESCRIPTION VCEsat transistor SOT23 plastic package. complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note Made Hong Kong. Made Malaysia. Made China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME DESCRIPTION plastic surface mounted package; leads MARKING CODE(1)
view
handbook, halfpage
PBSS8110T
QUICK REFERENCE DATA SYMBOL VCEO RCEsat PINNING base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. UNIT
MAM255
Fig.1 Simplified outline (SOT23) symbol.
VERSION SOT23
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO Ptot Tamb Tstg Notes Device mounted printed-circuit board, single sided copper, tinplated, standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation junction temperature operating ambient temperature storage temperature Tamb note Tamb note limited CONDITIONS open emitter open base open collector MIN.
PBSS8110T
MAX. +150 +150
UNIT
Device mounted printed-circuit board, single sided copper, tinplated, mounting collector cm2.
handbook, halfpage
Ptot
MLE354
(mW)
Tamb (°C)
PCB; copper mounting collector. Standard footprint.
Fig.2 Power derating curves.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
THERMAL CHARACTERISTICS SYMBOL Rth( j-a) PARAMETER thermal resistance from junction ambient CONDITIONS free air; note free air; note VALUE
PBSS8110T
UNIT
Notes Device mounted printed-circuit board, single sided copper, tinplated standard footprint. Device mounted printed-circuit board, single sided copper, tinplated mounting collector cm2.
(K/W)
mle356
(10)
10-5
10-4
10-3
10-2
10-1
1.0. 0.75.
0.5. 0.03.
0.2. 0.1.
0.05. 0.02.
0.01. (10) 0.0.
Fig.3 Transient thermal impedance function pulse time standard footprint.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
PBSS8110T
(K/W)
mle355
(10)
10-5
10-4
10-3
10-2
10-1
1.0. 0.75.
0.5. 0.03.
0.2. 0.1.
0.05. 0.02.
0.01. (10) 0.0.
Fig.4 Transient thermal impedance function pulse time collector copper mounting pad.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
CHARACTERISTICS unless otherwise specified. SYMBOL ICBO ICES IEBO PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain CONDITIONS note note VCEsat collector-emitter saturation voltage note RCEsat VBEsat VBEon Note Pulse test: 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance note MIN.
PBSS8110T
TYP.
MAX. 1.05
UNIT
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
PBSS8110T
mle352
handbook, halfpage
MLE362
10-1
(mA)
10-1
(mA)
Tamb Tamb Tamb
Tamb Tamb Tamb
Fig.5
current gain function collector current; typical values.
Fig.6
Base-emitter voltage function collector current; typical values.
handbook, halfpage
MLE366
handbook, halfpage
MLE353
VCEsat
VCEsat
10-1
10-1
10-2 10-1
(mA)
10-2 10-1
(mA)
IC/IB Tamb Tamb Tamb IC/IB Tamb
Fig.7
Collector-emitter saturation voltage function collector current; typical values.
Fig.8
Collector-emitter saturation voltage function collector current; typical values.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
PBSS8110T
VCEsat
mle357
handbook, halfpage
MLE363
VBEsat
10-1
10-2 10-1
10-2
10-3 10-4 (mA)
10-1 10-1
(mA)
IC/IB Tamb
IC/IB Tamb Tamb Tamb
Fig.9
Collector-emitter saturation voltage function collector current; typical values.
Fig.10 Base-emitter saturation voltage function collector current; typical values.
handbook, halfpage
MLE364
handbook, halfpage VBEsat
MLE365
VBEsat
10-1 10-1
(mA)
10-1 10-1
(mA)
IC/IB Tamb
IC/IB Tamb
Fig.11 Base-emitter saturation voltage function collector current; typical values.
Fig.12 Base-emitter saturation voltage function collector current; typical values.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
PBSS8110T
mle358
handbook, halfpage RCEsat
MLE359
(10)
10-1
10-1
(mA)
Tamb 3500 3150 2800 2450 2100 1750 1400 1050 (10)
IC/IB Tamb Tamb Tamb
Fig.13 Collector current function collector-emitter voltage; typical values.
Fig.14 Collector-emitter equivalent on-resistance function collector current; typical values.
handbook, halfpage RCEsat
MLE360
handbook, halfpage RCEsat
MLE361
10-1 10-1
(mA)
10-1 10-1
(mA)
IC/IB Tamb
IC/IB Tamb
Fig.15 Collector-emitter equivalent on-resistance function collector current; typical values.
Fig.16 Collector-emitter equivalent on-resistance function collector current; typical values.
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
PACKAGE OUTLINE
Plastic surface mounted package; leads
PBSS8110T
SOT23
detail
scale
DIMENSIONS original dimensions) UNIT max. 0.48 0.38 0.15 0.09 0.95 0.45 0.15 0.55 0.45
OUTLINE VERSION SOT23
REFERENCES JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003
Philips Semiconductors
Product specification
VCEsat (BISS) transistor
DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PBSS8110T
This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Preliminary data Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2003
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2003
SCA75
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
R75/02/pp12
Date release: 2003
Document order number:
9397 12008

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