Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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AP6679S/P
Lower On-resistance Simple Drive Requirement Fast Switching Characteristic
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V -75A
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
TO-263(S)
TO-263 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters. through-hole version (AP6679P) available low-profile applications.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=100 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
TO-220(P)
Units
Rating 0.71
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
201231031
AP6679S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min.
Typ. -0.03
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A VGS=-4.5V, ID=-24A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=VGS, ID=-250uA VDS=-10V, ID=-24A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ID=-16A VDS=-24V VGS=-4.5V VDS=-15V ID=-16A RG=3.3,VGS=-10V RD=0.94 VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2870 4590
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=-24A, VGS=0V IS=-16A, VGS=0V, dI/dt=-100A/µs
Min.
Typ.
Max. Units -1.2
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP6679S/P
-10V -8.0V Drain Current -6.0V
=150
-10V -8.0V -6.0V -4.5V
Drain Current
-4.5V
=-3.0V
=-3.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized DS(ON)
=24A =10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
-VGS(th)
-IS(A)
=150
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP6679S/P
10000
f=1.0MHz
Gate Source Voltage
-16A -24V Ciss (pF)
1000
Coss Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10ms 100ms
0.05
0.02 0.01
Duty factor Peak Rthjc
Single Pulse
Single Pulse
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
-4.5V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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