Simple Drive Requirement On-resistance Fast Switching P-CHANNEL E

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Simple Drive Requirement On-resistance Fast Switching P-CHANNEL E

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AP4953M
Simple Drive Requirement On-resistance Fast Switching
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance costeffectiveness. SO-8 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating 0.016
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
Value Max. 62.5
Unit
Data specifications subject change without notice
20020513
AP4953M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -0.1
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ID=-5A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
±100
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=-1.2V Tj=25, IS=-1.7A, VGS=0V
Min. Typ. Max. Units -1.67 -1.2
Forward Voltage
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board when mounted Min. copper pad.
AP4953M
-10V -8.0V -6.0V
-10V -8.0V -6.0V
Drain Current
=-4.0V
Drain Current
=-4.0V
=150
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=-5A
=10V
RDS(ON)
Normalized DS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP4953M
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Duty Factor
Normalized Thermal Response thja)
10ms
0.05
0.02
100ms
0.01
0.01
Single Pulse
Duty Factor Peak Rthja Rthja=135 oC/W
Single Pulse
0.001
0.01
0.0001
0.001
0.01
1000
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP4953M
10000
f=1.0MHz
-15V
-VGS Gate Source Voltage
1000
Ciss
(pF)
Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
100.00
10.00
1.00
VGS(th)
=150 -IS(A)
0.10
0.01
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4953M
OSCILLOSCOPE RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
-10V
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

Simple Drive Requirement On-resistance Fast Switching P-CHANNEL E

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