Simple Drive Requirement On-resistance Fast Switching P-CHANNEL E
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AP4435M
Simple Drive Requirement On-resistance Fast Switching
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SO-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Rating 0.02
Units
Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
20020430
AP4435M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -0.037
±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A
1530
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ID=-4.6A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=-1.2V Tj=25, IS=-2.1A, VGS=0V
Min. Typ. Max. Units -2.08 -0.75 -1.2
Forward Voltage
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board when mounted Min. copper pad.
AP4435M
-10V -8.0V -6.0V
-10V -8.0V -6.0V
Drain Current
Drain Current
=-4.0V
=-4.0V
=150
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=-8A
=-8A =-10V
Normalized RDS(ON)
RDS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP4435M
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Duty Factor
100us
Normalized Thermal Response thja)
10ms
0.05
0.02
100ms Single Pulse
0.01
0.01 0.01 Single Pulse
0.001 0.0001 0.001 0.01
Duty Factor Peak Rthja Rthja=125 oC/W
1000
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP4435M
f=1.0MHz
10000
=-4.6A =-15V
-VGS Gate Source Voltage
Ciss (pF)
1000
Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
100.00
10.00
1.00
-VGS(th)
-IS(A)
=150
0.10
0.01
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4435M
OSCILLOSCOPE RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
-10V
RATED -1~-3mA
Charge
Gate Charge Circuit
Gate Charge Waveform
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