Simple Drive Requirement On-resistance Fast Switching Characteristic
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AP4413M
Simple Drive Requirement On-resistance Fast Switching Characteristic
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-20V -7.8A
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SO-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Rating -7.8 -6.2 0.02
Units
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200413042
AP4413M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. -0.5
Typ. -0.01
Max. Units -1.5 ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
VGS=-10V, ID=-7A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-2A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ±20V ID=-7A VDS=-16V VGS=-4.5V VDS=-10V ID=-2A RG=3.3,VGS=-10V RD=10 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
1140 1820
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=-2A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units -1.2
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board when mounted Min. copper pad.
AP4413M
-10V
-10V -7.0V
Drain Current
-7.0V
Drain Current
-5.0V
-5.0V -4.5V
-4.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
ID=-4A Normalized DS(ON)
ID=-7A =-10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
=150
-VGS(th)
-IS(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4413M
f=1.0MHz
10000
-VGS Gate Source Voltage
-16V
(pF)
1000
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Duty factor=0.5
Normalized Thermal Response (Rthja)
0.05
10ms 100ms
0.02 0.01
0.01
Single Pulse
Duty factor Peak Rthja Rthja=125oC/W
Single Pulse
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
-4.5V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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