Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH
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AP4412M
Gate Charge Simple Drive Requirement Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, ultra on-resistance cost-effectiveness.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating 0.02
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
20020318
AP4412M
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.03 14.5
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=7A VGS=4.5V, ID=3.5A VDS=VGS, ID=250uA VDS=10V, ID=7A
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= ID=7A VDS=16V VGS=5V VDS=16V ID=7A RG=3.3,VGS=10V RD=2.3 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.2V Tj=25, IS=2.3A, VGS=0V
Min.
Typ.
Max. Units 2.08
Forward Voltage
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 125/W when mounted Min. copper pad.
AP4412M
8.0V 6.0V 5.0V Drain Current
=150
8.0V 6.0V 5.0V
Drain Current
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized DS(ON)
RDS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP4412M
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Duty Factor
Normalized Thermal Response thja)
10ms
0.05
0.02 0.01
100ms
0.01
Single Pulse
Single Pulse
Duty Factor Peak Rthja Rthja=125 oC/W
0.001 0.0001 0.001 0.01 1000
0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP4412M
f=1.0MHz
1000
=16V
Gate Source Voltage
Ciss
Coss
(pF)
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
Tj=150
Tj=25
VGS(th)
IS(A)
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4412M
OSCILLOSCOPE 0.64 RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
0.64 RATED
Charge
Gate Charge Circuit
Gate Charge Waveform
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