On-Resistance Fast Switching Simple Drive Requirement N-CHANNEL E
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AP4410M
On-Resistance Fast Switching Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
13.5m
SO-8
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
SO-8 package universally preferred commercial-industrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Rating 0.02
Units
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200606032
AP4410M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.037
Max. Units 13.5 ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
VGS=10V, ID=10A VGS=4.5V, ID=5A
13.5 1160
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=250uA VDS=15V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ID=10A VDS=15V VGS=5V VDS=25V ID=1A RG=3.3,VGS=5V RD=25 VGS=0V VDS=15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=2.1A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 17.1
Max. Units
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board when mounted Min. copper pad.
AP4410M
8.0V
=150
8.0V
Drain Current
Drain Current
6.0V
6.0V
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10A
Normalized RDS(ON)
=10A =10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
100.00
10.00
1.00
VGS(th)
=150 IS(A)
0.10
0.01
Source-to-Drain Voltage
Jujnction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4410M
10000
f=1.0MHz
Gate Source Voltage
=10A =15V
1000
Ciss
(pF)
Coss Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
100us
Normalized Thermal Response (Rthja)
DUTY=0.5
10ms
0.05
0.02 0.01
100ms
0.01
Single Pulse
Duty factor Peak Rthja Rthja=125 oC/W
Single Pulse
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Circuit
Gate Charge Circuit
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