Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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AP4407S/P
Lower On-resistance Simple Drive Requirement Fast Switching Characteristic
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V -50A
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness.
TO-263(S)
TO-263 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters. through-hole version (AP4407P) available low-profile applications.
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
TO-220(P)
Units
Rating
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200115041
AP4407S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min.
Typ. -0.01
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-24A VGS=-4.5V, ID=-16A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=VGS, ID=-250uA VDS=-10V, ID=-24A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ±25V ID=-24A VDS=-24V VGS=-4.5V VDS=-15V ID=-24A RG=3.3,VGS=-10V RD=0.63 VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2120 3390
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=-24A, VGS=0V IS=-24A, VGS=0V, dI/dt=-100A/µs
Min.
Typ.
Max. Units -1.2
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP4407S/P
-10V -8.0V Drain Current
=150
-10V -8.0V -6.0V
Drain Current
-6.0V
-4.5V
-4.5V
=-3.0V
=-3.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized DS(ON)
=-24A =-10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
-IS(A)
=150
-VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP4407S/P
f=1.0MHz
10000
-VGS Gate Source Voltage
-24V
(pF)
1000
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.05
0.02 0.01
Duty factor Peak Rthjc
Single Pulse
10ms 100ms
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
-4.5V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Lower On-resistance Simple Drive Requirement Fast Switching Characteri

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