Simple Drive Requirement Gate Charge Fast Switching BVDSS RDS(ON)

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Simple Drive Requirement Gate Charge Fast Switching BVDSS RDS(ON)

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AP40T03S/P
Simple Drive Requirement Gate Charge Fast Switching
BVDSS RDS(ON)
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-263 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters. through-hole version (AP40T03P) available low-profile applications.
TO-263
TO-220
Units
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=100 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 31.25 0.25
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200127031
AP40T03S/P
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.032
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=18A VGS=4.5V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=18A
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3,VGS=10V RD=0.83 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.3V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=28A, VGS=0V
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP40T03S/P
8.0V
=150
8.0V
Drain Current
Drain Current
6.0V
6.0V
=4.0V =4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=18A
=18A =10V
Normalized DS(ON)
RDS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP40T03S/P
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
1000
Duty Factor
Normalized Thermal Response thjc)
100us
0.05
0.02
Single Pulse
0.01
Single Pulse
Duty Factor Peak Rthjc
10ms 100ms
0.01 0.00001 0.0001 0.001 0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP40T03S/P
f=1.0MHz
10000
=18A
Gate Source Voltage
=10V =15V =20V
1000
Ciss (pF)
Coss Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
Tj=150
Tj=25
VGS(th)
IS(A)
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP40T03S/P
OSCILLOSCOPE RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
4.5V
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

Simple Drive Requirement Gate Charge Fast Switching BVDSS RDS(ON)

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