Simple Drive Requirement 2.5V Gate Drive Capability P-CHANNEL ENH

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Simple Drive Requirement 2.5V Gate Drive Capability P-CHANNEL ENH

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AP3310H/J
Simple Drive Requirement 2.5V Gate Drive Capability
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-20V 150m -10A
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness. This device suited voltage battery power applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=100 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating -6.2 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
201225023
AP3310H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. Typ. Max. Units -0.5 -0.1
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6,VGS=-5V RD=6 VGS=0V VDS=-6V f=1.0MHz
Gate-Source Leakage Total Gate Charge
±100
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=-1.2V
Min. Typ. Max. Units -1.2
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=-10A, VGS=0V
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP3310H/J
-4.5V
=150
-4.5V
-4.0V
-4.0V
Drain Current
Drain Current
-3.5V
-3.5V
-3.0V
-3.0V
-2.5V
-2.5V
-2.0V -2.0V
10.0
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
-2.8A
-2.8A -4.5V
Normalized DS(ON)
RDS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP3310H/J
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Duty Factor
Normalized Thermal Response thjc)
100us
0.05
0.02
Single Pulse
0.01
10ms Single Pulse 100ms
Duty Factor Peak Rthjc
0.01 0.00001 0.0001 0.001 0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP3310H/J
f=1.0MHz
1000
=-2.8A =-6V
Ciss
-VGS Gate Source Voltage
Coss (pF)
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
=150
-VGS(th)
-IS(A)
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP3310H/J
OSCILLOSCOPE RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE RATED -1~-3mA
Charge
Gate Charge Circuit
Gate Charge Waveform

Simple Drive Requirement 2.5V Gate Drive Capability P-CHANNEL ENH

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