Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

Datasheet Thumbnail

Top Searches for this datasheet

AP3302H/J
Gate Charge Simple Drive Requirement Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
Description
TO-252 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters. through-hole version (AP3302J) available low-profile applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.16
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200701031
AP3302H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
Test Conditions VGS=0V, ID=250uA
Min.
Typ.
Max. Units ±100
VGS=10V, ID=8A VDS=VGS, ID=250uA VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ID=10A VDS= VGS=10V VDS=15V ID=16A RG=3.3,VGS=10V RD=0.94 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=16A, VGS=0V IS=16A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP3302H/J
=150
9.0V 8.0V
Drain Current
Drain Current
9.0V
7.0V
8.0V
7.0V =5.0V
=5.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=20A =10V
Normalized RDS(ON)
Junction Temperature
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
=150
0.01
Source-to-Drain Voltage
,Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP3302H/J
f=1.0MHz
1000
=10A Gate Source Voltage
(pF)
=20V =16V =12V
Ciss
Coss Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Fig7. Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthjc)
DUTY=0.5
10ms 100ms
0.05
0.02
0.01
Duty factor Peak Rthjc
Single Pulse
Single Pulse
0.01
0.01 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

Top Searches for this datasheet

Other recent searches