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High Input Impedance High Pick Current Capability 3.3V Gate Drive Stro


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AP28G45EM
High Input Impedance High Pick Current Capability 3.3V Gate Drive Strobe Flash Applications
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
450V 130A
SO-8
Absolute Maximum Ratings
Symbol IGEP PD@TC=25 TSTG
Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, 3.3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Rating
Units
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol IGES ICES VCE(sat) VGE(th) td(on) td(off) Cies Coes Cres RthJA
Parameter Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Test Conditions VGE=± VCE=0V
VGE=3.3V, ICP=130A (Pulsed)
Min.
Typ. 3020
Max. 4830
Units
Collector-Emitter Leakage Current VCE=450V, VGE=0V Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=40A VCE=360V VGE=4.5V VCC=200V IC=15A RG=10 VGE=5V VGE=0V VCE=25V f=1.0MHz
Thermal Resistance Junction-Ambient
Notes:
1.Surface mounted copper board 125/W when mounted Min. copper pad. Data specifications subject change without notice
201117031
AP28G45EM
5.0V 4.0V Collector Current
5.0V 4.0V
Collector Current
3.3V
2.0V
2.0V
=1.0V
=1.0V
Collector-Emitter Voltage
Collector-Emitter Voltage
Typical Output Characteristics
Typical Output Characteristics
=6.0V
=4.0V VCE(sat) ,Saturation Voltage(V)
Collector Current(A)
=150
=130A
=120A
=100A
=50A
Gate-Emitter Voltage
Junction Temperature
Collector Current v.s. Gate-Emitter Voltage
Collector- Emitter Saturation Voltage v.s. Junction Temperature
VGE(th) ,Gate Threshold Voltage
,Collector-Emitter Voltage(V)
120A 100A
Junction Temperature
Gate-Emitter Voltage(V)
Gate Threshold Voltage
v.s. Junction Temperature
Collector Current v.s. Gate-Emitter Voltage
AP28G45EM
f=1.0MHz
10000
Peak Collector Current Cies
1000
(pF)
Coes
Cres
Collector-Emitter Voltage (V))
Gate-to-Emitter Voltage
Typical Capacitance Characterisitics
Maximum Pulse Collector Current
OSCILLOSCOPE
VCC=200
td(on)
td(off)
Switching Time Test Circuit
Switching Time Waveform
OSCILLOSCOPE
Gate -Emitter Voltage
=40A =360V
VCC=360V
1~3mA
Gate Charge (nC)
Gate Charge Test Circuit
Gate Charge Waveform

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