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High Input Impedance High Pick Current Capability 3.3V Gate Drive Stro
Top Searches for this datasheetAP28G45EM High Input Impedance High Pick Current Capability 3.3V Gate Drive Strobe Flash Applications N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR 450V 130A SO-8 Absolute Maximum Ratings Symbol IGEP PD@TC=25 TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current, 3.3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating Units Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) td(on) td(off) Cies Coes Cres RthJA Parameter Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Test Conditions VGE=± VCE=0V VGE=3.3V, ICP=130A (Pulsed) Min. Typ. 3020 Max. 4830 Units Collector-Emitter Leakage Current VCE=450V, VGE=0V Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=40A VCE=360V VGE=4.5V VCC=200V IC=15A RG=10 VGE=5V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted copper board 125/W when mounted Min. copper pad. Data specifications subject change without notice 201117031 AP28G45EM 5.0V 4.0V Collector Current 5.0V 4.0V Collector Current 3.3V 2.0V 2.0V =1.0V =1.0V Collector-Emitter Voltage Collector-Emitter Voltage Typical Output Characteristics Typical Output Characteristics =6.0V =4.0V VCE(sat) ,Saturation Voltage(V) Collector Current(A) =150 =130A =120A =100A =50A Gate-Emitter Voltage Junction Temperature Collector Current v.s. Gate-Emitter Voltage Collector- Emitter Saturation Voltage v.s. Junction Temperature VGE(th) ,Gate Threshold Voltage ,Collector-Emitter Voltage(V) 120A 100A Junction Temperature Gate-Emitter Voltage(V) Gate Threshold Voltage v.s. Junction Temperature Collector Current v.s. Gate-Emitter Voltage AP28G45EM f=1.0MHz 10000 Peak Collector Current Cies 1000 (pF) Coes Cres Collector-Emitter Voltage (V)) Gate-to-Emitter Voltage Typical Capacitance Characterisitics Maximum Pulse Collector Current OSCILLOSCOPE VCC=200 td(on) td(off) Switching Time Test Circuit Switching Time Waveform OSCILLOSCOPE Gate -Emitter Voltage =40A =360V VCC=360V 1~3mA Gate Charge (nC) Gate Charge Test Circuit Gate Charge Waveform Other recent searchesT2465-XV23-D1-7600 - T2465-XV23-D1-7600 T2465-XV23-D1-7600 Datasheet SiE802DF - SiE802DF SiE802DF Datasheet MM74C925 - MM74C925 MM74C925 Datasheet MM74C926 - MM74C926 MM74C926 Datasheet MM74C927 - MM74C927 MM74C927 Datasheet MM74C928 - MM74C928 MM74C928 Datasheet IMT17 - IMT17 IMT17 Datasheet HT3156A - HT3156A HT3156A Datasheet CNY36 - CNY36 CNY36 Datasheet
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