Fast Switching Characteristic Lower Gate Charge Small Footprint Profil
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AP2604Y
Fast Switching Characteristic Lower Gate Charge Small Footprint Profile Package SOT-26
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
5.5A
Description
Advanced Power MOSFETs utilized advanced processing techniques achieve lowest possible on-resistance, extremely efficient cost-effectiveness device. S0T-26 package universally used commercial-industrial applications.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, 4.5V Continuous Drain Current3, 4.5V Pulsed Drain Current
Rating 0.016
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max. 62.5
Unit
Data specifications subject change without notice
200115041
AP2604Y
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.02
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.8A VGS=4.5V, ID=2.4A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=250uA VDS=10V, ID=4.8A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=4.8A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=4.8A, VGS=0V IS=4.8A, VGS=0V, dI/dt=100A/µs
Min.
Typ.
Max. Units
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 156/W when mounted min. copper pad.
AP2604Y
7.0V Drain Current
=150 7.0V 5.0V 4.5V
Drain Current
5.0V
4.5V
=3.0V
=3.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized RDS(ON)
=4.8A =10V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
VGS(th)(V)
IS(A)
=150
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2604Y
f=1.0MHz
1000
Gate Source Voltage
=4.8A
=15V =20V =24V (pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.05
0.01
10ms 100ms
0.01
Single Pulse
Duty factor Peak Rthja Rthja 156/W
Single Pulse
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
4.5V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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