Simple Drive Requirement Small Package Outline Surface Mount Device

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Simple Drive Requirement Small Package Outline Surface Mount Device

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AP2305N
Simple Drive Requirement Small Package Outline Surface Mount Device
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-20V 4.2A
Description
SOT-23
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness. SOT-23 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating -4.2 -3.4 1.38 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
2004280301
AP2305N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. -0.5
Typ. -0.1
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-4.5A VGS=-4.5V, ID=-4.2A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A
10.6 2.32 3.68 32.4
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=55
VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= ID=-4.2A VDS=-16V VGS=-4.5V VDS=-15V ID=-4.2A RG=6,VGS=-10V RD=3.6 VGS=0V VDS=-15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=-1.2A, VGS=0V IS=-4.2A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 27.7
Max. Units -1.2
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 270/W when mounted min. copper pad.
AP2305N
-5.0V
TA=150oC
-5.0V -4.0V
Drain Current
Drain Current
-4.0V
-3.0V
-3.0V
-2.0V
-2.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=-4.2A Normalized RDS(ON)
-4.2A -4.5V
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
=150
IS(A)
0.01
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2305N
10000
f=1.0MHz
-4.2A
Gate Source Voltage
-16V
1000
Ciss
(pF)
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
DUTY=0.5
Normalized Thermal Response (Rthja)
0.05
0.01
10ms 100ms
Single Pulse
Duty factor Peak Rthja Rthja 270/W
0.01
Single Pulse
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
VDTO OSCILLOSCOPE RATED
OSCILLOSCOPE 0.75 RATED
-1~-3mA
Switching Time Circuit
Gate Charge Circuit

Simple Drive Requirement Small Package Outline Surface Mount Device

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