Simple Drive Requirement Small package outline Surface mount package

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Simple Drive Requirement Small package outline Surface mount package

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AP2304N
Simple Drive Requirement Small package outline Surface mount package
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
117m 2.7A
Description
SOT-23
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 4.5V Continuous Drain Current 4.5V Pulsed Drain Current
Rating 1.38 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200420043
AP2304N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min.
Typ.
Max. Units
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
VGS=10V, ID=2.5A VGS=4.5V, ID=2A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=55
VDS=VGS, ID=250uA VDS=4.5V, ID=2.5A VDS=25V, VGS=0V VDS=25V ,VGS=0V VGS=±20V ID=2.5A VDS=15V VGS=10V VDS=15V ID=1A RG=6,VGS=10V RD=15 VGS=0V VDS=15V f=1.0MHz
11.5
±100
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.2V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
IS=1.25A, VGS=0V
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 270/W when mounted min. copper pad.
AP2304N
=10V
=150 =10V Drain Current
Drain Current
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized DS(ON)
=10V =2.5A
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
2.25
2.05
VGS(th)
1.85
=150
1.65
1.45
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2304N
f=1.0MHz
1000
Gate Source Voltage
=15V =2.5A
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Fig7. Gate Charge Characteristics
Typical Capacitance Characteristics
Duty factor=0.5
Normalized Thermal Response (Rthja)
0.05
0.01
10ms
0.01
Single Pulse
Single Pulse
100ms
Duty factor Peak Rthja Rthja 270/W
0.001
0.0001
0.001
0.01
1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Simple Drive Requirement Small package outline Surface mount package

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