Simple Drive Requirement Small Package Outline Surface Mount Device
|
|
|
Top Searches for this datasheet
AP2303N
Simple Drive Requirement Small Package Outline Surface Mount Device
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-30V 240m 1.9A
Description
SOT-23
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating -1.9 -1.5 1.38 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200407042
AP2303N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min.
Typ. -0.1 17.5 130.4
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
VGS=-10V, ID=-1.7A VGS=-4.5V, ID=-1.3A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=-250uA VDS=-10V, ID=-1.7A VDS=-30V, VGS=0V VDS=-30V, VGS=0V VGS= ID=-1.7A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=-1.2V
Min.
Typ.
Max. Units -1.2
Pulsed Source Current Body Diode
Forward Voltage
IS=-1.25A, VGS=0V
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 270/W when mounted min. copper pad.
AP2303N
Drain Current
Drain Current
-10V -8.0V -6.0V -5.0V
=150
-10V -8.0V -6.0V -5.0V
=-4.0V
=-4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=-1.7A -10V
Normalized DS(ON)
=-1.3A
RDSON
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance
=150
-VGS(th)
-IF(A)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2303N
1000
f=1.0MHz
-VGS Gate Source Voltage
-1.7A -15V
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.05
0.01
0.01
Single Pulse
10ms
Duty factor Peak Rthja Rthja 270/W
Single Pulse
0.01
100ms
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
-10V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
Other recent searches
SOT409 - SOT409 SOT409 Datasheet
SN74ALB16244 - SN74ALB16244 SN74ALB16244 Datasheet
PST87XX - PST87XX PST87XX Datasheet
GOA9xx02W - GOA9xx02W GOA9xx02W Datasheet
2N7000 - 2N7000 2N7000 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
