Capable 2.5V gate drive Small package outline Surface mount package

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Capable 2.5V gate drive Small package outline Surface mount package

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AP2302N
Capable 2.5V gate drive Small package outline Surface mount package
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
3.2A
Description
SOT-23
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 4.5V Continuous Drain Current 4.5V Pulsed Drain Current
Rating 1.38 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200503044
AP2302N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min.
Typ.
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=250uA VDS=5V, ID=3.6A VDS=20V, VGS=0V VDS=20V ,VGS=0V VGS=±12V ID=3.6A VDS=10V VGS=4.5V VDS=10V ID=3.6A RG=6,VGS=5V RD=2.8 VGS=0V VDS=10V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.2V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
IS=1.6A, VGS=0V
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 270/W when mounted min. copper pad.
AP2302N
Drain Current
Drain Current
4.5V 3.5V 3.0V 2.5V
=150 4.5V 3.5V 3.0V 2.5V =2.0V
=2.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=3.6A
=4.5V
Normalized DS(ON)
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance
10.0
=150
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2302N
1000
f=1.0MHz
Gate Source Voltage
=3.6A =4.5V
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.05
0.01
10ms
0.01
Single Pulse
Single Pulse
100ms
Duty factor Peak Rthja Rthja 270/W
0.01
0.001 0.0001 0.001 0.01 1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
4.5V
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Capable 2.5V gate drive Small package outline Surface mount package

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