Simple Drive Requirement Small Package Outline Surface Mount Device

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Simple Drive Requirement Small Package Outline Surface Mount Device

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AP2301N
Simple Drive Requirement Small Package Outline Surface Mount Device
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
-20V 130m 2.6A
Description
SOT-23
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, on-resistance cost-effectiveness. SOT-23 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters.
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=70 PD@TA=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
Rating -2.6 -2.1 1.38 0.01
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
Value Max.
Unit
Data specifications subject change without notice
200407043
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. -0.5
Typ. -0.1 1.36
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=-1mA
RDS(ON)
VGS=-5V, ID=-2.8A VGS=-2.8V, ID=-2.0A
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=70
VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V ID=-2.8A VDS=-6V VGS=-5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-6V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=-1.2V
Min.
Typ.
Max. Units -1.2
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=-1.6A, VGS=0V
Notes:
1.Pulse width limited Max. junction temperature. 2.Pulse width <300us duty cycle <2%. 3.Surface mounted copper board 270/W when mounted min. copper pad.
AP2301N
VGS= VGS=
=150
VGS= VGS= VGS=
Drain Current
VGS=
Drain Current
VGS=
VGS=
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized DS(ON)
-2.8A
RDS(ON)
Gate-to-Source Voltage
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance
-VGS(th)
-IS(A)
=150
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP2301N
f=1.0MHz
1000
-VGS Gate Source Voltage
=-2.8A =-6V
(pF)
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.05
0.01
10ms 100ms
0.01 Single Pulse
Duty factor Peak Rthja Rthja 270/W
Single Pulse
0.01
0.001
0.0001
0.001
0.01
1000
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform

Simple Drive Requirement Small Package Outline Surface Mount Device

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