Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

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Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

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AP15N03P
Gate Charge Simple Drive Requirement Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) TO-220
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-220 package universally preferred commercialindustrial applications suited voltage applications such DC/DC converters high efficiency switching circuit.
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.22
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200218032
AP15N03P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.037
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8A VGS=4.5V, ID=6A
19.8
VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate Threshold Voltage
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VDS=VGS, ID=250uA VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.3,VGS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.3V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=15A, VGS=0V
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP15N03P
=10V =8.0V
=150
=10V =8.0V =6.0V
Drain Current
=6.0V
Drain Current
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Normalized RDS(ON)
=10V
RDS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP15N03P
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
10us
Normalized Thermal Response thjc)
DUTY=0.5
0.05
100us
0.02 SINGLE PULSE 0.01
10ms Single Pulse
Duty factor Peak Rthjc
100ms
0.01 0.00001
0.0001
0.001
0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP15N03P
f=1.0MHz
1000
=16V =20V Ciss Coss
Gate Source Voltage
=24V
(pF)
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
=150
VGS(th)
Junction Temperature(
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP15N03P
OSCILLOSCOPE 0.5x RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

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