Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

Datasheet Thumbnail

Top Searches for this datasheet

AP15N03H/J
Gate Charge Simple Drive Requirement Fast Switching
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
Description
TO-252 package universally preferred commercialindustrial surface mount applications suited voltage applications such DC/DC converters. through-hole version (AP15N03J) available low-profile applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.22
Units
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200227032
AP15N03H/J
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.
Typ. 0.037
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance
VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=18A
22.5 12.2
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150oC)
VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ID=8A VDS=24V VGS=5V VDS=15V ID=8A RG=3.4,VGS=10V RD=1.9 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.3V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=15A, VGS=0V
Notes:
1.Pulse width limited safe operating area. 2.Pulse width <300us duty cycle <2%.
AP15N03H/J
=10V
=150
=10V =8.0V
=8.0V Drain Current
Drain Current
=6.0V
=6.0V
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
RDS(ON)
Normalized DS(ON)
Junction Temperature
On-Resistance v.s. Gate Voltage
Normalized On-Resistance v.s. Junction Temperature
AP15N03H/J
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
DUTY=0.5
10us
Normalized Thermal Response thjc)
0.05
100us
0.02
0.01 SINGLE PULSE
Single Pulse
10ms
Duty factor Peak Rthjc
0.01
0.00001
0.0001
0.001
0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP15N03H/J
f=1.0MHz
1000
=16V =20V =24V (pF) Ciss
Gate Source Voltage
Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
=150 VGS(th)
Junction Temperature(
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP15N03H/J
OSCILLOSCOPE 0.5x RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

Gate Charge Simple Drive Requirement Fast Switching N-CHANNEL ENH

Top Searches for this datasheet

Other recent searches