Repetitive Avalanche Rated Fast Switching Simple Drive Requirement
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AP09N90W
Repetitive Avalanche Rated Fast Switching Simple Drive Requirement
BVDSS RDS(ON)
900V 8.6A
Description
AP09N90 series specially designed main switching devices universal 90~265VAC off-line AC/DC converter applications. type provide high blocking voltage overcome voltage surge toughest power system with best combination fast switching, ruggedized design cost-effectiveness.
TO-3P
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.92
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.52 Unit
Data specifications subject change without notice
200714032
AP09N90W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 0.67 11.5 67.1 19.9 25.8 10.3 305.2
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=900V, VGS=0V VDS=720V, VGS=0V VGS= ID=8.6A VDS=540V VGS=10V VDD=450V ID=5A RG=10,VGS=10V RD=90 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
4087 6000
Source-Drain Diode
Symbol Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25oC VDD=50V L=6.8mH RG=25 IAS=5.2A. 3.Pulse width <300us duty cycle <2%. Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=8.6A, VGS=0V
AP09N90W
Drain Current
5.5V
=150
5.0V 4.5V
Drain Current
5.0V
=10V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=4.5A =10V Normalized BVDSS Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized v.s. Junction
Normalized On-Resistance
VGS(th)
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N90W
f=1.0MHz
10000
=8.6A
Ciss
Gate Source Voltage
=180V =360V =540V
(pF)
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
10us
Normalized Thermal Response (Rthjc)
Duty Factor
100us
0.05
0.02
10ms Single Pulse
0.01 Single Pulse
Duty Factor Peak Rthjc
0.01 1000 10000 0.00001 0.0001 0.001 0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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