Simple Drive Requirement On-resistance Fast Switching Characteristics

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Simple Drive Requirement On-resistance Fast Switching Characteristics

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AP09N20H/J
Simple Drive Requirement On-resistance Fast Switching Characteristics
BVDSS RDS(ON)
200V 380m 8.6A
Description
Advanced Power MOSFETs from APEC provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. TO-252 package universally preferred commercialindustrial applications power dissipation levels approximately watts. through-hole version (AP09N20J) available lowprofile applications.
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.55
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
201112031
AP09N20H/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= ID=8.6A VDS=160V VGS=10V VDD=100V ID=8.6A RG=10,VGS=10V RD=11.6 VGS=0V VDS=25V f=1.0MHz
Min.
Typ. 0.24
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter Forward Voltage
Test Conditions IS=8.6A, VGS=0V IS=8.6A, VGS=0V, dI/dt=100A/µs
Min.
Typ. 2260
Max. Units
Reverse Recovery Time Reverse Recovery Charge
Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25 VDD=50V L=1mH RG=25 IAS=8.6A. 3.Pulse width <300us duty cycle <2%.
AP09N20H/J
8.0V
=150 Drain Current
8.0V 7.0V
Drain Current
7.0V
5.0V
5.0V
=4.0V
=4.0V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
IS(A)
=150
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP09N20H/J
1000
f=1.0MHz
=8.6A Gate Source Voltage
Ciss =100V =120V =160V (pF)
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Normalized Thermal Response thjc)
Duty factor=0.5
10ms 100ms
0.05
0.02
Duty factor Peak Rthjc
Single Pulse
Single Pulse
0.01
0.01
1000
0.00001
0.0001
0.001
0.01
Drain-to-Source Voltage
Pulse Width
Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
td(on) td(off)
Charge
Switching Time Waveform
Gate Charge Waveform

Simple Drive Requirement On-resistance Fast Switching Characteristics

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