Repetitive Avalanche Rated Fast Switching Simple Drive Requirement

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Repetitive Avalanche Rated Fast Switching Simple Drive Requirement

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AP02N60I
Repetitive Avalanche Rated Fast Switching Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
600V
Description
TO-220CFM package universally preferred commercialindustrial applications. device suited switch mode power supplies ,AC-DC converters high current high speed switching circuits.
TO-220CFM(I)
Absolute Maximum Ratings
Symbol ID@TC=25 ID@TC=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 1.26 0.176
Units
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value Unit
Data specifications subject change without notice
200117032
AP02N60I
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ.
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=1A VDS=VGS, ID=250uA VDS=20V, ID=1A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ID=2A VDS=480V VGS=10V VDS=300V ID=2A RG=10,VGS=10V RD=150 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.5V
Min.
Typ.
Max. Units
Pulsed Source Current Body Diode
Forward Voltage
Tj=25, IS=2A, VGS=0V
Notes: 1.Pulse width limited safe operating area. 2.Starting Tj=25oC VDD=50V L=40mH RG=25 IAS=2A. 3.Pulse width <300us duty cycle <2%.
AP02N60I
6.0V 5.5V
=150
6.0V 5.5V
Drain Current
Drain Current
5.0V
5.0V
=4.5V
=4.5V
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=10V
Normalized BVDSS
Normalized DS(ON)
Junction Temperature
Junction Temperature
Normalized BVDSS v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
AP02N60I
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
Duty Factor
Normalized Thermal Response thjc)
100us
10ms
0.05
100ms
0.02
0.01 Single Pulse
Duty Factor Peak Rthjc
Single Pulse
0.01 1000 10000
0.01 0.00001 0.0001 0.001 0.01
Pulse Width
Maximum Safe Operating Area
Effective Transient Thermal Impedance
AP02N60I
f=1.0MHz
1000
=320V =400V =480V
Gate Source Voltage
Ciss (pF)
Coss
Crss
Total Gate Charge (nC)
Gate Charge Characteristics
Typical Capacitance Characteristics
VGS(th)
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP02N60I
OSCILLOSCOPE 0.5x RATED
td(on) td(off)
Switching Time Circuit
Switching Time Waveform
OSCILLOSCOPE
RATED
Charge
Gate Charge Circuit
Gate Charge Waveform

Repetitive Avalanche Rated Fast Switching Simple Drive Requirement

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