Gate Charge Fast Switching Characteristics Simple Drive Requirement
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AP01L60T
Gate Charge Fast Switching Characteristics Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
600V 160mA
Description
Advanced Power MOSFETs utilized advanced processing techniques achieve lowest possible on-resistance, extremely efficient cost-effectiveness device. TO-92 package universally used commercial-industrial applications.
TO-92
Absolute Maximum Ratings
Symbol ID@TA=25 ID@TA=100 PD@TC=25 TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Rating 0.83
Units
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value Unit
Data specifications subject change without notice
200530031
AP01L60T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min.
Typ. 11.7 30.7
Max. Units ±100
Breakdown Voltage Temperature Coefficient Reference ID=1mA
RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 Drain-Source Leakage Current (Tj=150
VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= ID=1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3,VGS=10V RD=300 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Diode
Symbol Parameter
Continuous Source Current Body Diode
Test Conditions VD=VG=0V VS=1.2V IS=160mA, VGS=0V
Min.
Typ.
Max. Units
Forward Voltage
Notes: 1.Pulse width limited safe operating area. 3.Pulse width <300us duty cycle <2%.
AP01L60T
Drain Current
6.0V 5.5V 5.0V Drain Current
=150
0.75
5.0V
4.5V
=4.5V
=4.0V
0.25
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
=0.5A =10V
Normalized BVDSS
Normalized RDS(ON)
Junction Temperature
Junction Temperature
Normalized v.s. Junction Temperature
Normalized On-Resistance v.s. Junction Temperature
VGS(th)
0.01
Source-to-Drain Voltage
Junction Temperature
Forward Characteristic
Reverse Diode
Gate Threshold Voltage v.s. Junction Temperature
AP01L60T
1000
f=1.0MHz
Gate Source Voltage
=1.0A =480V
Ciss
(pF)
Coss
Crss
Total Gate Charge (nC)
Drain-to-Source Voltage
Gate Charge Characteristics
Typical Capacitance Characteristics
Drain Current
Case Temperature
Case Temperature
Maximum Drain Current v.s.
Typical Power Dissipation
Case Temperature
td(on) td(off) Charge
Switching Time Waveform
Gate Charge Waveform
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