LRB751V- 40T1 Construction silicon epitaxial planar SC-

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LRB751V- 40T1 Construction silicon epitaxial planar SC-

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(1)Small surface mounting type SC-76/SOD-323 (2)Low reverse current forward voltage. (3)High reliability (4)Pb-Free package available.
LRB751V- 40T1
Construction
silicon epitaxial planar
SC-76/SOD-323
ORDERING INFORMATION
Device LRB751V-40T1 LRB751V-40T1G (Pb-Free) Package SOD-323/SC-76 SOD-323/SC-76 Shipping 3000/Tape&Reel 3000/Tape&Reel
CATHODE ANODE
MAXIMUM RATINGS 25°C)
Parameter Peak reverse voltage reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature *60Hz Symbol IFSM Tstg Limits -40~+125 Unit
DEVICE MARKING
LRB751V-40T1=
ELECTRICAL CHARACTERISTICS(TA 25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Max. 0.37 Unit Conditions IF=1mA VR=30V VR=1V,f=1MHz
LRB751V-40T1-1/3
LRB751V-40T1 Electrical characteristic curves(TA 25°C)
1000m Typ. pulse measurement 100m
FORWARD CURRENT
75oC
25oC -25oC
Fig. Forward characteristics
FORWARD VOLTAGE
125oC 75oC
REVERSE CURRENT
25oC 100n -25oC Typ. pulse measurement REVERSE VOLTAGE
Fig. Reverse characteristics
CAPACITANCE BETWEEN TERMINALS (pF)
25oC 1MHz
REVERSE VOLTAGE
Fig. Capacitance between terminals characteristics
LRB751V-40T1-2/3
LRB751V- 40T1
SOD-323
0.63 0.02'' 1.60 0.063" 2.85 0.112'' 0.83 0.033'' inches
NOTES:
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETERS MILLIMETERS 1.60 1.15 0.80 0.25 0.15 0.00 0.089 2.30 0.10 0.177 2.70 1.80 1.35 1.00 0.40 INCHES 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 0.000 0.004 0.0035 0.0070 0.091 0.106
PIN:1:CATHODE 2:ANODE
LRB751V-40T1-3/3

LRB751V- 40T1 Construction silicon epitaxial planar SC-

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