LRB715WT1 Construction silicon epitaxial planar SC-89

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LRB715WT1 Construction silicon epitaxial planar SC-89

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Small surface mounting type SC-89 High reliability
LRB715WT1
Construction
silicon epitaxial planar
SC-89
MAXIMUM RATINGS 25°C)
Parameter Peak reverse voltage reverse voltage Mean rectifying current Peak forward surge current* Junction temperature Storage temperature
ANODE
ANODE CATHODE
Symbol IFSM Tstg
Limits -40~+125
Unit
DEVICE MARKING
LRB715WT1=3D
ELECTRICAL CHARACTERISTICS(TA 25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Max. 0.37 Unit Conditions IF=1mA VR=10V VR=1V,f=1MHz
LRB715WT1-1/3
LRB715WT1
Electrical characteristic curves(TA 25°C)
FORWARD CURRENT IF(A)
100m 100µ Ta=125
Typ. pulse measurement
REVERSE CURRENT IR(A)
100µ
Ta=125°C
Ta=75°C
Ta=25°C
Ta=75
100n
Ta=-25°C
Ta=25 Ta=-25
FORWARD VOLTAGE VF(V)
REVERSE VOLTAGE VR(V)
Fig. Forward characteristics
Fig. Reverse characteristics
CAPACITANCE BETWEEN TERMINALS Cr(pF)
REVERSE RECOVERY TIME trr(ns)
REVERSE VOLTAGE
FORWARD CURRENT (mA)
Fig. Capacitance between terminals characteristics
Fig. Reverse recovery time characteristics
LRB715WT1-2/3
LRB715WT1
SC-89
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: MILLIMETERS MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS MINIMUM THICKNESS BASE MATERIAL. 463C-01 OBSOLETE, STANDARD 463C-02. MILLIMETERS 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 0.53 0.10 0.15 0.20 0.30 0.40 0.50 1.10 1.50 1.60 1.70 INCHES 0.063 0.034 0.028 0.011 0.020 0.021 0.006 0.016 0.043 0.063
0.08 (0.003)
-TSEATING PLANE
0.059 0.030 0.024 0.009 0.004 0.012 0.059
0.067 0.040 0.031 0.013 0.008 0.020 0.067
RECOMMENDED PATTERN SOLDER PADS
LRB715WT1-3/3

LRB715WT1 Construction silicon epitaxial planar SC-89

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