LRB715T1 Construction silicon epitaxial planar SC-70/SO

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LRB715T1 Construction silicon epitaxial planar SC-70/SO

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Small surface mounting type SC-70/SOT323 High reliability
LRB715T1
Construction
silicon epitaxial planar
SC-70/SOT-323
ANODE CATHODE ANODE
MAXIMUM RATINGS 25°C)
Parameter Peak reverse voltage reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol IFSM Tstg Limits -55~+150 Unit
DEVICE MARKING
LRB715T1=3D
ELECTRICAL CHARACTERISTICS(TA 25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. Max. 0.37 Unit Conditions IF=1mA VR=10V VR=1V,f=1MHz
LRB715T1 -1/3
LRB715T1
Electrical characteristic curves(TA 25°C)
FORWARD CURRENT IF(A)
100m 100µ Ta=125
Typ. pulse measurement
REVERSE CURRENT IR(A)
100µ
Ta=75
100n
Ta=25 Ta=-25
FORWARD VOLTAGE VF(V)
REVERSE VOLTAGE VR(V)
Fig. Forward characteristics
Fig. Reverse characteristics
CAPACITANCE BETWEEN TERMINALS Cr(pF)
REVERSE RECOVERY TIME trr(ns)
REVERSE VOLTAGE
FORWARD CURRENT (mA)
Fig. Capacitance between terminals characteristics
Fig. Reverse recovery time characteristics
LRB715T1 -2/3
LRB715T1
SC-70/SOT-323
NOTES:
DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
INCHES 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017REF 0.026BSC 0.028REF 0.079 0.095
MILLIMETERS 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425REF 0.650BSC 0.700REF 2.00 2.40
ANODE ANODE CATHODE
0.025 0.65
0.025 0.65
0.075 0.035 0.028 inches
LRB715T1 -3/3

LRB715T1 Construction silicon epitaxial planar SC-70/SO

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