LRB491T1 Silicon epitaxial planar. Small plastic package. High cu

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LRB491T1 Silicon epitaxial planar. Small plastic package. High cu

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LRB491T1
Silicon epitaxial planar. Small plastic package. High current capacity(IF=1.0A). Ultra (VF=0.40V Typ. switching power supply Applications. Pb-Free Package available.
SC-59
DEVICE MARKING ORDERING INFORMATION
Device LRB491T1 LRB491T1G Marking (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel
CATHODE
ANODE
MAXIMUM RATINGS(Ta=25°C)
Parameter Symbol Limits Unit
Peak reverse voltage reverse voltage forward current Peak forward surge current Junction temperature Storage temperature
60Hz
IFSM Tstg
-40+125
ELECTRICAL CHARACTERISTICS(Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage Reverse current
0.45
IF=1.0A VR=20V
Note) sensitive product handling required.
LRB491T1-1/3
LRB491T1
ELECTRICAL CHARACTERISTIC CURVES(Ta=25°C)
REVERSE CURRENT (mA)
1000 75°C 100µ 0.1µ 25°C
FORWARD CURRENT
Ta=125°C
100m
-25°C
0.1m
FORWARD VOLTAGE
REVERSE VOLTAGE
Fig.1 Forward characteristics
10000 f=1MHz
TERMINAL CAPACITANCE (pF)
Fig.2 Reversecharacteristics
D=0.8
FORWARD POWER DISSIPATION
sine
D=0.5 D=0.3 D=0.2
1000
D=0.05 D=0.1
D=Tp/T Tj=Tj Max.
REVERSE VOLTAGE
AVERAGE RECTIFIED FORWARD CURRENT
Fig.3 Capacitance between terminals characteristics
AVERAGE RECTIFIED FORWARD CURRENT
D=0.8 sine
D=0.5
Fig.4 Forward power dissipation characteristics
D=Tp/T VR=VRM
D=0.3 D=0.2
D=0.1 D=0.05
AMBIENT TEMPERATURE (°C)
Fig.5 Derating curve
LRB491T1-2/3
LRB491T1
SC-59
MILLIMETERS
INCHES
2.70 1.00 0.35 1.70 0.0130 0.20 1.25 2.50
3.10 1.70 1.30 0.50 2.10 0.100 0.26 0.60 1.65 3.00
0.1063 0.0512 0.0394 0.0138 0.0670 0.0005 0.0040 0.0079 0.0493 0.0985
0.1220 0.0669 0.0511 0.0196 0.0826 0.00040 0.0102 0.0236 0.0649 0.1181
LRB491T1-3/3

LRB491T1 Silicon epitaxial planar. Small plastic package. High cu

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