REPETITIVE AVALANCHE dv/dt RATED IRHY7230CM IRHY8230CM JANSR2N738

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REPETITIVE AVALANCHE dv/dt RATED IRHY7230CM IRHY8230CM JANSR2N738

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Preliminary Data Sheet 9.1273B
REPETITIVE AVALANCHE dv/dt RATED
IRHY7230CM IRHY8230CM JANSR2N7381 JANSH2N7381
[REF: MIL-PRF-19500/614] N-CHANNEL
HEXFET® TRANSISTOR
200Volt, 0.40, MEGA HARD HEXFET
International Rectifier's MEGA HARD technology HEXFETs demonstrate virtual immunity failure. Additionally, under identical pre- post-radiation test conditions, International Rectifier's HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Since HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
MEGA HARD
Product Summary
Part Number IRHY7230CM IRHY8230CM BVDSS 200V 200V RDS(on) 0.40 0.40 9.4A 9.4A
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range
Pre-Radiation
IRHY7230CM, IRHY8230CM Units
V/ns
Lead Temperature (0.063 (1.6mm) from case 10s) Weight 7.0(typical)
11/4/97
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.23 0.40 0.49 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 6.0A 12V, 9.4A VGS, 1.0mA 15V, 6.0A VDS= Rating,VGS=0V Rating 125°C -20V 12V, 9.4A Rating 100V, 9.4A,
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
ckage Maue esrd ckage bnigpd
Modified MOSFET igteitrn
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
Modified MOSFET symbol show
25°C, 9.4A, 25°C, 9.4A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
1.67
Units
Test Conditions
Typical socket mount
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Radiation Performance Hard HEXFETs
Radiation Characteristics
presented Table column IRHY7230CM. values Table will either dose rate test circuits that used. Both pre- post-radiation performance tested specified using same drive circuitry test conditions order provide direct comEvery manufacturing tested dose rate parison. should noted that radiation level (total dose) environment MlL-STD-750, test Rads (Si) changes limits specified method 1019. International Rectifier imposed parameters. standard gate voltage volts note special VDSS bias condition equal device rated High dose rate testing done request basis using dose rate Rads voltage note Pre- post-radiation limits devices irradiated Rads (Si) identi- (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized neutron heavy Single Event Effects (SEE) environments. Single Event Effects characterization shown Table International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier uses radiation environments.
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHY7230CM IRHY8230CM
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
1.0mA VDS, 1.0mA +20V VDS=0.8 Rating, VGS=0V 12V, =6.0A 25°C, 9.4A,VGS
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance Diode Forward Voltage
-100 0.40
1.25
-100 0.53
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Units Test Conditions Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
Parameter
BVDSS
Typical
Units
(Si) (MeV/mg/cm2)
Fluence Range (ions/cm2) (µm)
Bias
Bias
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
9.4A
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
2000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
9.4A 160V 100V
Capacitance (pF)
1500
Ciss
1000
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us 100us 10ms
Single Pulse
1000
-VSD ,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on)
d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Pre-Radiation
Single Pulse Avalanche Energy (mJ)
4.2A 5.9A BOTTOM 9.4A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature(
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRHY7230CM, IRHY8230CM, JANSR-, JANSH-, 2N7381 Devices
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. 50V, Starting 25°C, [0.5 (IL2) Peak 9.4A, 12V, 9.4A, di/dt 660A/µs, BVDSS, 150°C Suggested 2.35 Pulse width Duty Cycle °C/W W/°C
Pre-Radiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019. Total Dose Irradiation with Bias. rated BVDSS (pre-radiation) applied during irradiation MlL-STD-750, method 1019. This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Process characterized independent laboratory. Pre-Radiation Post-Radiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions 257AA
ASSIGNMENT
CAUTION BERYLLIA WARNING MIL-PRF-19500 Package containing beryllia shall ground, sandblasted, machined, have other operations performed them which will produce beryllia beryllium dust. Furthermore, beryllium oxide packages shall placed acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 11/97

REPETITIVE AVALANCHE dv/dt RATED IRHY7230CM IRHY8230CM JANSR2N738

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