REPETITIVE AVALANCHE dv/dt RATED IRHF9130 IRHF93130 JANSR2N7389 J

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REPETITIVE AVALANCHE dv/dt RATED IRHF9130 IRHF93130 JANSR2N7389 J

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Preliminary Data Sheet 9.882B
REPETITIVE AVALANCHE dv/dt RATED
IRHF9130 IRHF93130 JANSR2N7389 JANSF2N7389
[REF: MIL-PRF-19500/630] P-CHANNEL
HEXFET® TRANSISTOR
-100 Volt, 0.30, HARD HEXFET
International Rectifier's P-Channel HARD technology HEXFETs demonstrate excellent threshold voltage stability breakdown voltage stability total radiation doses high Rads (Si). Under identical pre- postradiation test conditions, International Rectifier's P-Channel HARD HEXFETs retain identical electrical specifications Rads (Si) total dose. compensation gate drive circuitry required. These devices also capable surviving transient ionization pulses high 1012 Rads (Si)/Sec, return normal operation within microseconds. Single Event Effect (SEE) testing International Rectifier P-Channel HARD HEXFETs demonstrated virtual immunity failure. Since PChannel HARD process utilizes International Rectifier's patented HEXFET technology, user expect highest quality reliability industry. P-Channel HARD HEXFET transistors also feature well-established advantages MOSFETs, such voltage control, very fast switching, ease paralleling temperature stability electrical parameters. They well-suited applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high-energy pulse circuits space weapons environments.
HARD
Product Summary
Part Number IRHF9130 IRHF93130 BVDSS -100V -100V RDS(on) 0.30 0.30 -6.5A -6.5A
Features:
Radiation Hardened Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
-12V, 25°C -12V, 100°C 25°C dv/dt TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -6.5 -4.1 -6.5
Pre-Radiation
IRHF9130, IRHF93130 Units
V/ns
(0.063 (1.6mm) from case 10s) 0.98 (typical)
10/21/97
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Pre-Radiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
-100 -2.0
Units
-0.112 0.30 0.325 -4.0 -250 -100 V/°C
Test Conditions
-1.0mA Reference 25°C, -1.0mA -12V, -4.1A -12V, -6.5A VGS, -1.0mA -15V, -4.1A VDS= Rating,VGS=0V Rating 125°C -20V -12V, -6.5A Rating -50V, -6.5A, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
ckage Maue esrd ckage bnigpd
Modified MOSFET igteitrn
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1200
-25V 1.0MHz
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
-6.5 -3.0 0.74
Test Conditions
Modified MOSFET symbol show
25°C, -6.5A, 25°C, -6.5A, di/dt -100A/µs -50V
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Units
Test Conditions
Typical socket mount
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device Radiation Characteristics
Radiation Performance P-Channel Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs tested verify their hardness capability. hardness assurance program International Rectifier uses radiation environments. Every manufacturing tested dose rate (total dose) environment MlL-STD-750, test method 1019. International Rectifier imposed standard gate voltage volts note VDSS bias condition equal device rated voltage note Pre- post-radiation limits devices irradiated Rads (Si) identical presented Table column IRHF9130 values Table will either dose rate test circuits that used. Both preand post-radiation performance tested specified using same drive circuitry test conditions order provide direct comparison. should noted that radiation level Rads (Si) changes limits specified parameters. High dose rate testing done special request basis using dose rate 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs considered neutron-tolerant, stated MIL-PRF-19500 Group International Rectifier P-Channel radiation hardened HEXFETs have been characterized heavy Single Event Effects (SEE) environments results shown Table Test Conditions
-1.0mA VDS, -1.0mA -20V DS=0.8 Rating, VGS=0V -12V, =-4.1A 25°C, -6.5A,VGS
Table Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1
IRHF9130 IRHF93130
100K Rads (Si) 300K Rads (Si)
Units
Drain-to-Source Breakdown Voltage -100 Gate Threshold Voltage -2.0 -4.0 Gate-to-Source Leakage Forward -100 Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source 0.30 On-State Resistance Diode Forward Voltage -3.0
-100 -2.0 -5.0 -100 0.30 -3.0
Table High Dose Rate
Parameter
VDSS di/dt
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Drain-to-Source Voltage
Units Test Conditions Applied drain-to-source voltage during gamma-dot Peak radiation induced photo-current -800 -160 A/µsec Rate rise photo-current Circuit inductance required limit di/dt
Table Single Event Effects
Parameter
BVDSS
Typical
-100
Units
(Si) (MeV/mg/cm2)
Fluence Range (ions/cm2) (µm)
Bias
-100
Bias
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Pre-Radiation
Drain-to-Source Current
Drain-to-Source Current
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
-5.0V
-5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
-6.5A
Drain-to-Source Current
-50V 20µs PULSE WIDTH
-12V
-VGS Gate-to-Source Voltage
Junction Temperature(
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Pre-Radiation
2000
-VGS Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
-6.5 =-80V =-50V =-20V
Capacitance (pF)
1500
1000
Coss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
100us
Single Pulse
10ms 1000
-VSD ,Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Pre-Radiation
D.U.T.
Drain Current
-12V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Pre-Radiation
Single Pulse Avalanche Energy (mJ)
-12V -20V
-2.9A -4.1A BOTTOM -6.5A
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature(
(BR)DSS
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-12V
.2µF .3µF
-12V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
D.U.T.
IRHF9130, IRHF93130, JANSR-, JANSF-, 2N7389 Device
Repetitive Rating; Pulse width limited
maximum junction temperature. Refer current HEXFET reliability report. -25V, Starting 25°C, [0.5 (IL2) Peak -6.5A, -12V, -6.5A, di/dt -430A/µs, BVDSS, 150°C Suggested 2.35 Pulse width Duty Cycle °C/W W/°C
Pre-Radiation
Total Dose Irradiation with Bias.
volt applied during irradiation MIL-STD-750, method 1019. Total Dose Irradiation with Bias. rated BVDSS (pre-radiation) applied during irradiation MlL-STD-750, method 1019. This test performed using flash x-ray source operated e-beam mode (energy ~2.5 MeV), nsec pulse. Process characterized independent laboratory. Pre-Radiation Post-Radiation test conditions identical facilitate direct comparison circuit applications.
Case Outline Dimensions TO-205AF (Modified TO-39)
dimensions shown millimeters (inches)
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 10/97

REPETITIVE AVALANCHE dv/dt RATED IRHF9130 IRHF93130 JANSR2N7389 J

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