HF50A060ACE HF50A060ACE Hexfred Wafer Form Size Wafer E
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2.599-1
HF50A060ACE
HF50A060ACE Hexfred Wafer Form
Size Wafer
Electrical Characteristics Wafer Form
Parameter Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 1.0V Max. 600V Min. 25µA Max. Test Conditions 25°C, 10.0A 25°C, 250µA 25°C, 600V
Mechanical Data
Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Mechanical Dwg. Number Minimum Street Width Reject Size Location Recommended Storage Environment: Cr-Ni-Ag 1kA-4kA-6kA microns) 0.257" 0.205" 125mm, with std. flat .015" -.003" 01-5163 Microns 0.25mm Diameter Minimum Outline drawing below Store original container, dessicated nitrogen, with contamination
Reference Standard packaged part design GA75TS60U
Outline
LOCATION
Anode
Anode Cathode (.02 0.02 1.27 .102 (.05 .635
19/02/98 Rev.1
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