IRF2807 HEXFET® Power MOSFET Advanced Process Technology Dyn
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91517A
IRF2807
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS
RDS(on) 0.013
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance package cost TO-220 contribute wide acceptance throughout industry.
TO-220AB
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
0.75
Units
°C/W
5/13/98
IRF2807
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.078 3400
Max. Units Conditions 250µA V/°C Reference 25°C, 0.013 10V, 250µA 50V, 75V, 60V, 150°C -100 -20V 10V, Fig. 0.87, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 43A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Caculated continuous current based maximum allowable
junction temperature; recommended current-handling package refer Design 93-4
Starting 25°C, 620µH
43A. (See Figure
43A, di/dt 330A/µs, V(BR)DSS,
175°C
IRF2807
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
10.0
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRF2807
6000
5000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
Capacitance (pF)
4000
Ciss
3000
2000
Coss
1000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
OPERATION THIS AREA LIMITED RDS(on)
Reverse Drain Current
10us
Drain Current
100us
10ms
Single Pulse
1000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRF2807
LIMITED PACKAGE
D.U.T.
Drain Current
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50
0.20
0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF2807
1400
Single Pulse Avalanche Energy (mJ)
BOTTOM
1200
1000
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
IRF2807
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRF2807
Package Outline
TO-220AB Outline Dimensions shown millimeters (inches)
2.87 (.11 2.62 (.10 (.149 (.139 6.47 (.25 6.10 (.24 4.69 4.20 (.05 (.04
5.24 (.60 4.84 (.58
1.15 (.04
GATE
4.09 (.55 3.47 (.53
4.06 (.16 3.55 (.14
0.93 (.03 0.69 (.02
0.55 (.02 0.46 (.01
(.01
2.54 (.10 4.5M
(.11 (.10
Part Marking Information
TO-220AB
EXAMP ASSEMB
TIOL TIFIE LOGO ASSEMB ASSEMBLY
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 5/98
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