high power COMMON BASE bipolar transistor. designed pulsed systems fre

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high power COMMON BASE bipolar transistor. designed pulsed systems fre

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Watts, Volts, Pulsed Avionics 1030 1090
high power COMMON BASE bipolar transistor. designed pulsed systems frequency band 1030-1090 MHz. device gold thin-film metallization proven highest MTTF. transistor includes input returns fast rise time. thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE 55KT, Style Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation 25oC2 Maximum Voltage Current BVces Collector Base Voltage BVebo Emitter Base Voltage Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 2050 Watts Volts Volts Amps 200oC 200oC
ELECTRICAL CHARACTERISTICS
SYMBOL Pout VSWR BVebo BVces CHARACTERISTICS Power Power Input Power Gain Collector Efficiency Rise Time Load Mismatch Tolerance TEST CONDITIONS 1030 Volts µsec 1030 30:1 UNITS Watts Watts
Emitter Base Breakdown Collector Emitter Breakdown Current Gain Thermal Resistance
50mA 100mA 1000mA,
0.08
Volts Volts
Note rated output power pulse conditions rated pulse conditions Cannot measure input return
Sept 2005
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.
TPR700
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.
TPR700
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.

high power COMMON BASE bipolar transistor. designed pulsed systems fre

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