FTS2053 FTS2053 N-Channel Silicon MOSFET General-Purpos

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FTS2053 FTS2053 N-Channel Silicon MOSFET General-Purpos

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Ordering number ENN8146
FTS2053
FTS2053
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance. drive. Mounting height 1.1mm.
Specifications
Absolute Maximum Ratings Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS Tstg PW10µs, duty cycle1% Mounted ceramic board (1000mm2!0.8mm) Conditions Ratings +150 Unit
Electrical Characteristics Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings Unit
Marking S2053
Continued next page.
SANYO products described contained herein have specifications that handle applications that require extremely high levels reliability, such life-support systems, aircraft's control systems, other applications whose failure reasonably expected result serious physical and/or material damage. Consult with your SANYO representative nearest before using SANYO products described contained herein such applications. SANYO assumes responsibility equipment failures that result from using products values that exceed, even momentarily, rated values (such maximum ratings, operating condition ranges, other parameters) listed products specifications SANYO products described contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PA TB-00000085 No.8146-1/4
FTS2053
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) td(off) Conditions specified Test Circuit. specified Test Circuit. specified Test Circuit. specified Test Circuit. VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A IS=2A, VGS=0 Ratings 0.82 Unit
Package Dimensions unit 2246
0.95
Switching Time Test Circuit
VDD=50V
0.65
0.425
ID=1A RL=50
PW=10µs D.C.1%
VOUT
0.95
0.25
0.125
Drain Drain Drain Drain Source Source Source Gate SANYO TSSOP8
FTS2053
0.05
6.0V
VDS=10V
VGS=3.0V
8.0V
Drain Current,
3.5V
Drain Current,
Ta=2 75°C
Drain-to-Source Voltage,
IT05950
RDS(on)
Gate-to-Source Voltage,
-25°C
IT05952
RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Static Drain-to-Source On-State Resistance, RDS(on)
Ta=25°C ID=1A
Gate-to-Source Voltage,
IT05954
Ambient Temperature,
IT05956
No.8146-2/4
FTS2053
VDS=10V
Forward Transfer Admittance,
VGS=0
Forward Current,
0.01
0.01
Drain Current,
IT05958 1000
Ta=7
-25°C
25°C
IT05960
Time
VDD=50V VGS=10V
Ciss, Coss, Crss
f=1MHz
Ciss
Diode Forward Voltage,
Switching Time, Time
Ciss, Coss, Crss
-0.1
td(off)
td(on)
Coss
Crss
-1.0
Drain Current,
IT05962
IT05964
Drain-to-Source Voltage,
Gate-to-Source Voltage,
VDS=50V ID=2A
IDP=8A ID=2A
10µs
IT05966
Drain Current,
Operation this area limited RDS(on).
0.01 0.01
Ta=25°C Single pulse Mounted ceramic board (1000mm2!0.8mm)
Total Gate Charge,
Drain-to-Source Voltage,
7100 IT08457
Allowable Power Dissipation,
Ambient Temperature,
IT08458
No.8146-3/4
FTS2053
Note usage Since FTS2053 MOSFET product, please avoid using this device vicinity highly charged objects.
Specifications SANYO products described contained herein stipulate performance, characteristics, functions described products independent state, guarantees performance, characteristics, functions described products mounted customer's products equipment. verify symptoms states that cannot evaluated independent device, customer should always evaluate test devices mounted customer's products equipment. SANYO Electric Co., Ltd. strives supply high-quality high-reliability products. However, semiconductor products fail with some probability. possible that these probabilistic failures could give rise accidents events that could endanger human lives, that could give rise smoke fire, that could cause damage other property. When designing equipment, adopt safety measures that these kinds accidents events cannot occur. Such measures include limited protective circuits error prevention circuits safe design, redundant design, structural design. event that SANYO products(including technical data,services) described contained herein controlled under applicable local export control laws regulations, such products must exported without obtaining export license from authorities concerned accordance with above law. part this publication reproduced transmitted form means, electronic mechanical, including photocopying recording, information storage retrieval system, otherwise, without prior written permission SANYO Electric Co., Ltd. information described contained herein subject change without notice product/technology improvement, etc. When designing equipment, refer "Delivery Specification" SANYO product that intend use. Information (including circuit diagrams circuit parameters) herein example only guaranteed volume production. SANYO believes information herein accurate reliable, guarantees made implied regarding infringements intellectual property rights other rights third parties. This catalog provides information February, 2005. Specifications information herein subject change without notice.
No.8146-4/4

FTS2053 FTS2053 N-Channel Silicon MOSFET General-Purpos

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