HMJE13009 AMPERE SILICON POWER TRANSISTOR Description H

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HMJE13009 AMPERE SILICON POWER TRANSISTOR Description H

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Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
HMJE13009
AMPERE SILICON POWER TRANSISTOR
Description
HMJE13009 designed high-voltage, high-speed power switching inductive circuits where fall time critical. They particularly suited 220V switch-controls, Solenoid/Relay drivers Deflectioncircuits. TO-220AB
Specification Features
VCEO(sus) 400V. Reverse Bias with Inductive Loads@TC=100°C Inductive Switching Matrix Amp., 100°C @8A, 100°C 120ns(Typ.) 700V Blocking Capability. Switching Applications Information.
Absolute Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak* Base Current-Continuous Base Current-Peak* Emitter Current-Continuous Emitter Current-Peak Total Power Dissipation@TA=25°C Derate above 25°C Total Power Dissipation@TC=25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO(sus) VCEV VEBO Tstg Max. +150 Unit Watts mW/°C Watts mW/°C
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Thermal Characteristics
Characteristic Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Maximum Lead Temperature Soldering Purposes: 1/8" from Case Seconds Symbol Max. 1.25 62.5 Unit °C/W °C/W
HMJE13009
HSMC Product Specification
Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage (IC=10mA, IB=0) Collector Cutoff Current (VCEV=Rated Value, VBE(off)=1.5Vdc (VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C) Emitter Cutoff Current (VEB=9Vdc, IC=0) Second Breakdown Second Breakdown Collector Current with base forward biased Clamped Inductive with Base Reverse Biased Characteristics Current Gain (IC=1Adc, VCE=5Vdc) Current Gain (IC=5Adc, VCE=5Vdc) Current Gain (IC=8Adc, VCE=5Vdc) Current Gain (IC=12 Adc, VCE=5Vdc) Collector-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=12Adc, IB=3Adc) (IC=8Adc, IB=1.6Adc, TC=100°C) Base-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=8Adc, IB=1.6Adc, TC=100°C) Dynamic Characteristics Current Gain Bandwidth Product (IC=500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) Switching Characteristics Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped Voltage Storage Time Crossover Time (IC=8Adc, Vclamp=300Vdc) (IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C) (VCC=125Vdc, IC=8A) IB1=IB2=1.6A, tp=25uS Duty Cycle1% *hFE1 *hFE2 *hFE3 *hFE4 *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 Is/b VCEO(sus) Symbol Min.
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
Typ.
Max.
Unit
ICEV IEBO
mAdc mAdc
0.06 0.45
0.92 0.12
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE13009
HSMC Product Specification
Characteristics Curve
Safe Operating Area
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
Reverse Bias Switching Safe Operating Area
Collector Current-Ic (A).
Collector Current
VBE(off)=9V 1.5V TC100oC IB1=2.5A
100ms
1000
Forward Voltage-VCB
VCEV, Collector-Emitter Clamp Voltage
Current Gain Collector Current
VCE=5V
Saturation Voltage Collector Current
VBE(sat) IC=5IB
Saturation Voltage
0.001
0.01
0.001
0.01
Collector Current
Collector Current
Saturation Voltage Collector Current
VCE(sat) IC=4IB
Saturation Voltage Collector Current
VCE(sat) IC=5IB
Saturation Voltage (V).
Saturation Voltage
0.01 0.001
0.01
0.01 0.001
0.01
Collector Current
Collector Current
HMJE13009
HSMC Product Specification
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
Capacitance Reverse-Biased Voltage
1000
Switching Time Collector Current
VC=125V, IC=5IB1 IB1=-IB2
Switching Time (us).
Capacitance (pF)
Tstg
Reverse-Biased Voltage
Collector Current
HMJE13009
HSMC Product Specification
TO-220AB Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
13009 Control Code
Date Code
Note: Green label used pb-free packing Style: 1.Base 2.Collector 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
Typical, Unit:
3-Lead TO-220AB Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMJE13009
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.16 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HMJE13009
HSMC Product Specification

HMJE13009 AMPERE SILICON POWER TRANSISTOR Description H

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