HMJE13009A AMPERE SILICON POWER TRANSISTOR Description

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HMJE13009A AMPERE SILICON POWER TRANSISTOR Description

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Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
HMJE13009A
AMPERE SILICON POWER TRANSISTOR
Description
HMJE13009A designed high-voltage, high-speed power switching inductive circuits where fall time critical. They particularly suited 220V switch-controls, Solenoid/Relay drivers Deflectioncircuits.
TO-220AB
Specification Features
VCEO(sus)=400V Reverse Bias with Inductive Loads @TC=100°C Inductive Switching Matrix Amp., 100°C.tc@8A, 100°C 120ns(Typ.) 700V Blocking Capability Switching Applications Information
Absolute Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak* Base Current-Continuous Base Current-Peak* Emitter Current-Continuous Emitter Current-Peak Total Power Dissipation@TA=25°C Derate above 25°C Total Power Dissipation@TC=25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO(sus) VCEV VEBO Tstg Max. +150 Unit Watts mW/°C Watts mW/°C
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Thermal Characteristics
Characteristic Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Maximum Lead Temperature Soldering Purposes: 1/8" from Case Seconds Symbol Max. 1.25 62.5 Unit °C/W °C/W
HMJE13009A
HSMC Product Specification
Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Characteristics Collector-Emitter Sustaining Voltage (IC=10mA, IB=0) Collector Cutoff Current (VCEV=Rated Value, VBE(off)=1.5Vdc (VCEV=Rated Value, VBE(off)=1.5Vdc, TC=100°C) Emitter Cutoff Current (VEB=9Vdc, IC=0) Second Breakdown Second Breakdown Collector Current with base forward biased Clamped Inductive with Base Reverse Biased Characteristics Current Gain (IC=0.5Adc, VCE=5Vdc) Current Gain (IC=5Adc, VCE=5Vdc) Current Gain (IC=8Adc, VCE=5Vdc) Current Gain (IC=12Adc, VCE=5Vdc) Collector-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=12Adc, IB=3Adc) (IC=8Adc, IB=1.6Adc, TC=100°C) Base-Emitter Saturation Voltage (IC=5Adc, IB=1Adc) (IC=8Adc, IB=1.6Adc) (IC=8Adc, IB=1.6Adc, TC=100°C) Dynamic Characteristics Current Gain Bandwidth Product (IC=500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) Switching Characteristics Delay Time Rise Time Storage Time Fall Time Inductive Load, Clamped Voltage Storage Time Crossover Time (IC=8Adc, Vclamp=300Vdc) (IB1=1.6Adc,VBE(off)=5Vdc, TC=100°C) (VCC=125Vdc, IC=8A) IB1=IB2=1.6A, tp=25uS Duty Cycle1% *hFE1 *hFE2 *hFE3 *hFE4 *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 Is/b VCEO(sus) Symbol Min.
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
Typ.
Max.
Unit
ICEV IEBO
mAdc mAdc
Figure Figure
0.06 0.45
0.92 0.12
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HMJE13009A
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
VCE=5V
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
Saturation Voltage Collector Current
VBE(sat) IC=5IB
Saturation Voltage
0.001
0.01
0.001
0.01
Collector Current
Collector Current
Saturation Voltage Collector Current
VCE(sat) IC=4IB
Saturation Voltage Collector Current
VCE(sat) IC=5IB
Saturation Voltage (V).
Saturation Voltage
0.01 0.001
0.01
0.01 0.001
0.01
Collector Current
Collector Current
Capacitance Reverse-Biased Voltage
1000
Switching Time Collector Current
VC=125V, IC=5IB1 IB1=-IB2
Switching Time (us).
Capacitance (pF)
Tstg
Reverse-Biased Voltage
Collector Current
HMJE13009A
HSMC Product Specification
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
Safe Ooperating Area
Collector Current-Ic (A).
100ms
1000
Forward Voltage-VCB
HMJE13009A
HSMC Product Specification
TO-220AB Dimension
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
13009A Control Code
Date Code
Note: Green label used pb-free packing Style: 1.Base 2.Collector 3.Emitter Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48
Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87
Typical, Unit:
3-Lead TO-220AB Plastic Package HSMC Package Code:
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMJE13009A
HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HE200206 Issued Date 2002.02.01 Revised Date 2005.08.15 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 +0/-5 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HMJE13009A
HSMC Product Specification

HMJE13009A AMPERE SILICON POWER TRANSISTOR Description

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