HTIP112A SILICON POWER DARLINGTON TRANSISTOR Monolithic Darl

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HTIP112A SILICON POWER DARLINGTON TRANSISTOR Monolithic Darl

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Spec. HA200221 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
HTIP112A
SILICON POWER DARLINGTON TRANSISTOR
Monolithic Darlington Configuration Integrated Antiparallel Collector-Emitter Diode
Description
devices sillcon Epitaxial-Base transistor monolithic Darlington configuration mounted TO-92 plastic package. intented linear switching applications. TO-92
Applications
Linear Switching Industrial Equipment
Absolute Maximum Ratings
Symbol VCBO VCEO VEBO Ptot Tstg Parameter Collector-Base Voltage(IE=0) Collector-Emitter Voltage(IB=0) Emitter-Base Voltage(IC=0) Collector Current Collector Peak Current Base Current Total Dissipation Tamb=25 Storage Temperature Max. Operating Junction Temperature
Value
Unit
Thermal Data
Rthj-amb Thermal Resistance Junction-ambient (Max.)
Electrical Characteristics (Tcase=25°C, unless otherwise specified)
Symbol ICEO ICBO IEBO VCE(sus) *VCE(sat) *VBE *hFE Parameter Collector Cut-off Current (IB=0) Collector Cut-off Current (IE=0) Emitter Cut-off Current (IC=0) Collector-Emitter Sustaining Voltage (IB=0) Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Test Conditions VCE=50V VCB=100V VEB=5V IC=30mA IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V Min. 1000 Typ. Max. Unit
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HTIP112A
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
Spec. HA200221 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Current Gain Collector Current
(x1000)
(x1000)
VCE=4V VCE=3V
0.01 0.001
0.01
0.01 0.001
0.01
Collector Current-IC
Collector Current-IC
Saturation Voltage Collector Current
Saturation Voltage Collector Current
Saturation Voltage
Saturation Voltage
VCE(sat) IC=100IB
0.001
VCE(sat) IC=250IB
0.001
0.01
0.01
Collector Current-IC
Collector Current-IC
Saturation Voltage Collector Current
Voltage Collcetor Current
Saturation Voltage
Voltage
VBE(ON) VCE=4V
VBE(sat) IC=250IB
0.01 0.001
0.01
0.001
0.01
Collector Current-IC
Collector Current-IC
HTIP112A
HSMC Product Specification
Spec. HA200221 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Voltage Collcetor Current
100.0
Capcitance Reverse-Biased Voltage
VBE(ON) VCE=3V
Capacitance (pF)
Voltage
0.001
10.0 0.01
Collector Current-IC
Reverse Biased Voltage
Safe Operating Area
PT=1mS
Collector Current-IC
PT=100mS
PT=1S
0.01 1000
Forward Voltage
HTIP112A
HSMC Product Specification
TO-92 Dimension
Spec. HA200221 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Marking:
Free Mark
Pb-Free: (Note) Normal: None
Control Code
Date Code
Note: Green label used pb-free packing
Style: 1.Emitter 2.Collector 3.Base Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Min. 4.33 4.33 12.70 0.36 3.36 0.36
Max. 4.83 4.83 0.56 *1.27 3.76 0.56 *2.54 *1.27
Typical, Unit:
3-Lead TO-92 Plastic Package HSMC Package Code:
TO-92 Taping Dimension
F1,F2 Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 Max. 4.83 4.20 0.53 4.83 2.90 16.50 9.50 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00
Unit:
F1F2
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HTIP112A HSMC Product Specification
Soldering Methods HSMC's Products
Storage environment: Temperature=10oC~35oC Humidity=65%±15% Reflow soldering surface-mount devices Figure Temperature profile
Ramp-up Tsmax Temperature
Spec. HA200221 Issued Date 2002.08.01 Revised Date 2004.06.18 Page
Critical Zone
Tsmin Preheat
Ramp-down
25oC Peak Time
Profile Feature Average ramp-up rate Preheat Temperature (Tsmin) Temperature (Tsmax) Time (min max) (ts) Tsmax Ramp-up Rate Time maintained above: Temperature (TL) Time (tL) Peak Temperature (TP) Time within actual Peak Temperature (tP) Ramp-down Rate Time 25oC Peak Temperature Flow (wave) soldering (solder dipping) Products devices. Pb-Free devices.
Sn-Pb Eutectic Assembly C/sec 100oC 150oC 60~120 <3oC/sec 183oC 60~150 240oC +0/-5oC 10~30 <6oC/sec minutes
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 <3oC/sec 217oC 60~150 260oC +0/-5oC 20~40 <6oC/sec minutes
Peak temperature
Dipping time 5sec ±1sec 5sec ±1sec
+0/-5
HTIP112A
HSMC Product Specification

HTIP112A SILICON POWER DARLINGTON TRANSISTOR Monolithic Darl

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