Small-Signal Device Data Bipolar Transistors, JFETs Diodes S
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DL126/D Rev. Nov-2001
Small-Signal Device Data
Bipolar Transistors, JFETs Diodes
Small-Signal Device Data
Bipolar Transistors, JFETs, Diodes
DL126/D Rev. Nov-2001
SCILLC, 2001 Previous Edition 1997 "All Rights Reserved''
AnyLevel, Bullet-Proof, CHIPSCRETES, DUOWATT, E-FET, EASYCAP, EASY SWITCHER, ECLinPS, ECLinPS Lite, ECLinPS Plus, EpiBase, Epicap, EZFET, FULLPAK, GEMFET, GigaComm, ICePAK, L2TMOS, MCCS, MDTL, MECL, MEGAHERTZ, MHTL, MiniGate, MiniMOS, MiniMOSORB, Mosorb, MRTL, MTTL, Multi-Pak, NOCAP, ON-Demand, PHASESLICE, PowerBase, POWERSENSE, POWERTAP, Quake, SCANSWITCH, SENSEFET, SLEEPMODE, SMALLBLOCK, SMARTDISCRETES, SMARTswitch, SUPERBRIDGES, SuperLock, Surmetic, SWITCHMODE, Thermopad, Thermowatt, TMOS, TMOS Design Device, TMOS Stylized, Unibloc, UNIT/PAK, Uniwatt, WaveFET, Z-Switch TRIM trademarks Semiconductor Components Industries, (SCILLC). Thermal Clad trademark Bergquist Company.
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Table Contents
Page Chapter Selector Guide
Bipolar Transistors General-Purpose Transistors General-Purpose Multiple Transistors Noise Good Linearity Darlington Transistors High Current Transistors High Voltage Transistors Transistors Switching Transistors Multiple Switching Transistors Digital Transistors (Bias Resistor Transistors BRTs) Saturation Voltage Transistors Junctional Field-Effect Transistors JFETs Low-Frequency/Low-Noise High-Frequency Amplifiers Switches Choppers Tuning Switching Diodes Abrupt Junction Tuning Diodes Hyper-Abrupt Junction Tuning Diodes Schottky Diodes Switching Diodes General Purpose Signal Switching Diodes
Page Chapter Data Sheets
Bipolar Power Transistor Data Sheets
Chapter Packaging Case Outlines
Tape Reel Specifications 1093 Case Outlines 1100 Surface Mount Packages Recommended Footprint Solderability Specifications 1109
Chapter Index
Subject Index Device Index, Alpha Numeric Sales Office Representatives Listing Document Type Definitions 1123 1126 1132 1133
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CHAPTER Selector Guide
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Small-Signal
Bipolar Transistors, JFETs, Diodes
Brief
Page
This section highlights semiconductors that most popular have history high usage most applications. covers wide range Small-Signal semi- conductors. large selection bipolar transistors, JFETs diodes available surface mount insertion assembly technology.
Small-Signal Package Cross-Reference Table
EIAJ SOT-23 SC-59 SC-70 SC-75, SC-90 SC-89 SC-74 SC-74A SC-88 SC-88A SC-77 SC-76 SC-79 SC-62 SC-73 SC-43 SOT-363 SOT-353 SOD-123 SOD-323 SOD-523 SOT-89 SOT-223 SOT-54 SOT-666 SOT-665 SO-16 BOLD denotes Semiconductor package name. TO-92 EMT6 EMT5 SOT-346 SOT-323 SOT-416 SOT-490 SOT-457 TSOP6 TSOP5 JEDEC Other SST3 SMT3. MPAK UMT3, CMPAK EMT3, SMPAK EMT3 SMT6, SC-59-6 SMT5, SC-59-5 UMT6, SC-70-6 UMT5, SC-70-5 SMD2 UMD2, EMD2, MPT3, UPAK
Bipolar Transistors General-Purpose Transistors General-Purpose Multiple Transistors Noise Good Linearity Darlington Transistors High Current Transistors High Voltage Transistors Transistors Switching Transistors Multiple Switching Transistors Digital Transistors (Bias Resistor Transistors BRTs) Saturation Voltage Transistors Junctional Field-Effect Transistors JFETs Low-Frequency/Low-Noise High-Frequency Amplifiers Switches Choppers Tuning Switching Diodes Abrupt Junction Tuning Diodes Hyper-Abrupt Junction Tuning Diodes Schottky Diodes Switching Diodes General Purpose Signal Switching Diodes
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Bipolar Transistors
General-Purpose Transistors
BC449 BC449A BC447 MPS8099 MPSA06 2N4410 BC546 BC546B BC487 BC487B MPSA05 BC182 BC182A BC182B BC237 BC237A BC237B BC237C BC337 BC337-16 BC337-25 BC337-40 BC550C BC547A BC547B BC547C MPSA18 MPSA20 MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338-25 MPS4124 MPS5172 MPS6521 MPSL51 MPS8599 MPSA56 MPS6729 BC556B BC488B MPSA55 MPS2907A 2N5087 BC212 BC212B BC307B BC307C BC327 BC327-16 BC327-25 BC327-40 BC560C BC557 BC557A BC557B BC557C 2N4403 MPS6652 2N3906 BC558B BC558C BC213 MPS4126 MPS6523
V(BR)CEO
1000
(Typ) (Typ) (Typ) (Typ) (Typ) (Typ) (Typ)
Package
Page 242, 190, 190, 196, 196, 205, 205, 205, 205, 246, 242, 242, 242, 242, 242,
TO-226AA, TO-92 226AA Case 29-11 Page 1100
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
General-Purpose Transistors
V(BR)CEO
Package
Page
MPSW05
MPSW55
903,
MPS6729
MPSW06
BSS64LT1 BC846ALT1 BC846BLT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1 BC817-16LT1 BC817-25LT1 BC817-40LT1 BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 MMBT2222ALT1 MMBT3904LT1 MMBT4401LT1 BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 MMBT5088LT1 MMBT5089LT1 MMBT4124LT1
MPSW56
BSS63LT1 BC856ALT1 BC856BLT1 MMBT2907ALT1 MMBT5087LT1 BC807-16LT1 BC807-25LT1 BC807-40LT1 BC857ALT1 BC857BLT1 MMBT3906LT1 MMBT4403LT1 BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1
1200
-0.25 0.15 (Typ) (Typ)
TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100
903,
TO-236AB, SOT-23 Case 318-08 Page 1101
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
General-Purpose Transistors
MSA1162GT1 MSA1162YT1 MSB710-RT1 MSB709-RT1 BC856AWT1 BC856BWT1 MMBT2907AWT1 BC857BWT1 BC857CWT1 MSB1218A-RT1 MMBT3906WT1 BC858AWT1 BC858BWT1 2SA1774 BC857BTT1 BC857CTT1 MMBT3906TT1
V(BR)CEO
(Typ) (Typ)
Package
Page
MSD601-RT1 MSD601-ST1 MSD602-RT1 MSC2712GT1 MSD1328-RT1 MSD1328-ST1 BC846AWT1 BC846BWT1 MSD1819A-RT1 BC847AWT1 BC847BWT1 BC847CWT1 MMBT2222AWT1 MMBT3904WT1 BC848AWT1 BC848BWT1 BC848CWT1 MSC3930-BT1 2SC4617 BC847BTT1 BC847CTT1 MMBT3904TT1 MMBT2222ATT1
SC-59 Case 318D 318D-04 Page 1102
SC-70, SC-70 SOT-323 Case 419-04 Page 1104
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
General-Purpose Multiple Transistors
Device Type Dual Dual Dual Complimentary Dual Dual Dual Dual Dual Complimentary Dual Complimentary Dual Dual Dual Complimentary Dual Dual Dual Dual Dual Complimentary Dual Complimentary Quad Quad Quad Quad Quad Quad Complimentary
V(BR)CEO
1000
(Typ)
4.0/10 5.0/4.0 4.0/10
Package
Page
BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 BC848BDW1T1 BC848CDW1T1 BC858BDW1T1 BC858CDW1T1 BC848BPDW1T1 BC848CPDW1T1 MMPQ2222A MMPQ2369 MMPQ3467 MMPQ3904 MMPQ3906 MMPQ6700
SC-88, SOT-363 Case 419B-02 Page 1105
SO-16 Case 751B-05 751B Page 1107
Devices listed bold italic Semiconductor preferred devices.
Bipolar Transistors
Noise Good Linearity
BC550C
V(BR)CEO
(Typ)
(Typ) (Typ)
Package
Page 246,
2N5087
BC560C MPS6523 MMBT5087LT1
MPSA18
2N5088 2N5089
MPS6521 MMBT5089LT1 MMBT5088LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1
TO-226AA, TO-92 Case 29-11 Page 1100 (Note
TO-236AB, SOT-23 Case 318-08 Page 1101
Devices listed bold italic Semiconductor preferred devices. Noise Figure Volts. kHz.
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Bipolar Transistors
Darlington Transistors
MPSW63
V(BR)CEO
1000 1000 1000 1000 1000 1000 1000 1000 1000
150K 150K 160K 160K 200K 300K
(Typ)
Package
Page
MPSW45A
MPSW45 MPSW13 MPSW14
MPSW64
MPSA77
TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100
875, 860, 860,
MPSA29 BC372 BC373 MPSA27 BC618
2N6427 2N6426 MPSA14 MPSA13 BC517
MPSA75
MPSA64 MPSA63
226AA, TO-92 TO-226AA, Case 29-11 Page 1100
MMBTA14LT1
MMBTA64LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
663,
BSP52T1
1000
2000
SOT-223 Case 318E-04 Page 1103
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
High Current Transistors
V(BR)CEO
1000 1000 1000 1000 2000 1000 1000
200/150
(Typ)
0.3/0.5
Package
Page
BC489 BC639 BC489A BC489B BC639-16 MPS651 BC637 BC635 BC368
BC490 BC640 BC490A BC490B BC640-16 MPS751 BC638 BC636 BC369
227, 263, 227, 227, 263, 263, 263, 900,
TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100
200/150
(Typ)
TO-226AA, TO-92 226AA, Case 29-11 Page 1100
MPSW01A
MPSW51A
MPSW01
MPSW51
1000
900,
MMBTA06LT1
MMBTA56LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
661,
BCP56T1 BCP56-10T1 BCP56-16T1 PZT2222AT1 PZT651T1 BCP68T1
BCP53T1 BCP53-10T1 BCP53-16T1 PZT2907AT1 PZT751T1 BCP69T1 NSL35TT1 NSL12TT1 NSL5TT1
1000 1000 1000 2000 1000 1000 1000 1000
(Typ) (Typ) (Typ) (Typ)
SOT-223 Case 318E-04 Page 1103
321, 321, 321, 1058 1061 1064, 1066 324, 1043
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
1039 1047
BCX56-10R1
1000
(Typ)
SOT-89 Case 1213-02 Page 1108
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
High Voltage Transistors
BF493S
V(BR)CEO
1000 1000
0.15
Package
Page
MPSW42
BF393
MPSW92
2N5551
2N6517 MPSA42
BF422 2N5550 2N6515 MMBT6517LT1 MMBTA42LT1 MMBT5551LT1 PZTA96ST1 BSP19AT1
2N5401 2N6520 MPSA92 BF423
MMBT6520LT1 MMBTA92LT1 MMBT5401LT1
TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100
343, 1073 1068, 1071 352,
TO-226AA, TO-92 Case 29-11 Page 1100
TO-236AB, SOT-23 Case 318-08 Page 1101
PZTA42T1
BF720T1
PZTA92T1 BSP16T1 BF721T1
SOT-223 Case 318E-04 318E Page 1103
MSD42WT1
MSB92WT1 MSB92AWT1
SC-70, SOT-323 Case 419-04 Page 1104
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
Transistors
V(BR)CEO
0.65 0.65 (Typ) COBO COBO COBO
Package
Page
MPSH10
BF959
TO-226AA, TO-92 Case 29-11 Page 1100
MPSH17 MPS918 MPS5179
MPS3563
1400
MMBTH10LT1 MMBTH10-4LT1
MMBT918LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
MSD2714AT1 MSC2295-BT1 MSC2295-CT1 MSC3130T1
SC-59 Case 318D-04 Page 1102
NSF2250WT1
2000
COBO
SC-70, SOT-323 Case 419-04 Page 1104
1030
Devices listed bold italic Semiconductor preferred devices.
Bipolar Transistors
Switching Transistors
V(BR)CEO
Toff
Package
Page 1049 1054
MPS3646 MPS2369 MPS2369A 2N4401 2N3904 P2N2222A
2N4403 2N3906
P2N2907A
TO-226AA, TO-92 226AA, Case 29-11 Page 1100
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
Switching Transistors
MMBT3906LT1 MMBT4403LT1 MMBT3640LT1
V(BR)CEO
Toff
Package
Page
MMBT3904LT1 MMBT4401LT1 MMBT3904WT1
236AB, SOT-23 TO-236AB, Case 318-08 Page 1101
MMBT3906WT1
SC-70, SOT-323 Case 419-04 Page 1104
MMBT3904TT1
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
MMBT3906TT1
Devices listed bold italic Semiconductor preferred devices.
Bipolar Transistors
Multiple Switching Transistors
Device Type Dual Dual Dual Complimentary Quad Quad Quad Quad Complimentary
V(BR)CEO
Toff 5.0/4.0 (Typ) (Typ) (Typ) (Typ)
Package
Page
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MMPQ2369 MMPQ3904 MMPQ3906 MMPQ6700
SC-88, SOT-363 Case 419B-02 Page 1105
SO-16 Case 751B 751B-05 Page 1107
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
Digital Transistors (Bias Resistor Transistors)
These devices include bias resistors semiconductor chip with transistor. diagram orientation resistors.
(IN) (GND) (OUT)
DTC114E DTC124E DTC144E DTC143T DTC123E DTC143Z DTC114Y DTD113E DTC143E DTC114T MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 DTC144TT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1
DTA114E DTA124E DTA144E DTA143T DTA123E DTA143Z DTA114Y DTB113E DTA143E DTA114T MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 DTA144TT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1
V(BR)CEO
Package
Page
4.7K 2.2K 4.7K 4.7K 4.7K 1.0K 2.2K 4.7K 4.7K 100K 100K 4.7K 1.0K 2.2K 4.7K 4.7K 2.2K 2.2K 100K
2.2K 4.7K 1.0K 2.2K 4.7K 100K 1.0K 2.2K 4.7K
402,
TO-226AA, TO-92 226AA Case 29-11 Page 1100
SC-59 Case 318D-04 318D Page 1102
967,
419,
TO-236AB, SOT-23 Case 318-08 Page 1101
741,
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
Digital Transistors (Bias Resistor Transistors)
These devices include bias resistors semiconductor chip with transistor. diagram orientation resistors.
(IN) (GND) (OUT)
V(BR)CEO
Package
Page
MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1
MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1
4.7K 1.0K 2.2K 4.7K 4.7K 2.2K 100K 4.7K 2.2K 4.7K 4.7K 2.2K 100K
1.0K 2.2K 4.7K 100K 2.2K 4.7K 4.7K 100K
SC-70, SOT-323 Case 419-04 Page 1104
1006,
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
410,
Devices listed bold italic Semiconductor preferred devices.
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Dual Digital Transistors (Bias Resistor Transistors)
These devices include bias resistors semiconductor chip with transistor. diagram orientation resistors.
(IN)
(OUT)
(GND)
V(BR)CEO
Package
Page
MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1
MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1
4.7K 1.0K 2.2K 4.7K 4.7K 2.2K 100K
1.0K 2.2K 4.7K 100K
SC-88, SOT-363 Duals Case 419B-02 Page 1105
998,
Devices listed bold italic Semiconductor preferred devices.
Combinational Digital Transistors (Bias Resistor Transistors)
These devices include bias resistors semiconductor chip with transistor. diagram orientation resistors.
(IN)
(OUT)
(GND)
Device
Type
V(BR)CEO
Package
Page
MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 UMA4NT1 UMA6NT1 UMC2NT1 UMC3NT1 UMC5NT1
Dual Complimentary
MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232 MUN5233 MUN5234 MUN5235 MUN5211 MUN5212 MUN5211 4.7K/10K MUN2240
MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5211 MUN5212 MUN5211 MUN5213 MUN2240
SC-88, SOT-363 Case 419B-02 Page 1105
1015
Dual Common Emitter Dual Common Emitter Dual Common Base Collector Dual Common Base Collector Dual Common Base Collector
1077 1077
SC-88A, SOT-353 SC70-5 SC70 Case 419A-02 Page 1107
1081 1081 1081
Devices listed bold italic Semiconductor preferred devices.
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Bipolar Transistors
Saturation Voltage Transistors
V(BR)CEO
VCE(sat)
Package
Page
MMBT2132T1
MMBT2131T1
0.25
SC-74, SC-59 Single Case 318F-02 Page 1103
540,
MMBT489LT1
1000 1000 2000
0.20 0.25 0.15
TSOP-6 TSOP Single Case 318G-02 Page 1104 TO-236AB, SOT-23 Case 318-08 Page 1101
MMBT589LT1 MBT35200MT1 MMBT6589T1
1000
0.25
NSL35TT1
1000
0.37
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
1043
NSL12TT1
1000
0.35
1039
Devices listed bold italic Semiconductor preferred devices.
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Junctional Field-Effect Transistors
JFETs
Low-Frequency/Low-Noise
mmho µmho Ciss Crss VGSS VGDO Volts VGS(off) Volts IDSS Package
Page
2N5457 2N5458 BF245A BF245B BF256A
2N5460 2N5461 2N5462
0.75
TO-226AA, TO-92 226AA Case 29-11 Page 1100
MMBF5460LT1
BFR30LT1 BFR31LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
Devices listed bold italic Semiconductor preferred devices.
High-Frequency Amplifiers
Device mmho (Typ) (Typ) µmho (Typ) (Typ) Ciss Crss (Typ) (Typ) VGSS VGDO Volts VGS(off) Volts IDSS TO-236AB, TO-236AB SOT-23 Case 318-08 Page 1101 226AA, TO-226AA, TO-92 Case 29-11 Page 1100 Package
Page
MPF102
2N5486 J309 J310 MMBF5457LT1 MMBF5484LT1 MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1
Devices listed bold italic Semiconductor preferred devices.
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Junctional Field-Effect Transistors (continued)
JFETs (continued)
Switches Choppers
RDS(on) Ciss Crss VGSS VGDO Volts VGS(off) Volts
(Typ)
IDSS
toff
Package
Page
J112
MPF4392
2N5639
MPF4393
J110
(Typ)
2N5555 2N5638 J111 J113 MPF4856 MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
TO-226AA, TO-92 Case 29-11 Page 1100
MMBFJ175LT1 MMBFJ177LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
Devices listed bold italic Semiconductor preferred devices.
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Tuning Switching Diodes
Tuning Diodes Abrupt Junction
Device MV2101 MV2105 Volts 13.5 29.7 26.4 13.5 19.8 29.7 24.3 13.5 Nominal 16.5 36.3 39.6 16.5 24.2 36.3 29.7 16.5 Ratio Q@40V (Min) (Min)
SOD-323 Case 477-02 Page 1106 226AC, TO-92 TO-226AC, 2-Lead Case 182-06 Page 1101
Package
Page
MV2109 LV2205 LV2209 MMBV2105LT1 MMBV2107LT1 MMBV2109LT1 MMBV2101LT1 MMBV2103LT1 MMBV2108LT1 MMBV3102LT1 MMVL2101T1 MMVL2105T1
TO-236AB, SOT-23 Case 318-08 Page 1101
Devices listed bold italic Semiconductor preferred devices.
Tuning Diodes Hyper-Abrupt Junction
Device Volts MHz) Volts Ratio Volts 3.0/25 Type Package Page
MV209
Single TO-226AC, TO-92 226AC 2-Lead Case 182-06 Page 1101
MV104 MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 MMBV432LT1 MMBV609LT1 MMVL105GT1 MMVL809T1 MMVL3102T1 MMVL109T1 MMVL409T1
3.0/25 3.0/25 3.0/8.0 2.0/8.0 3.0/25 2.0/8.0 3.0/25 3.0/25 3.0/8.0
100@ 2.0V
Single Single Single Single Single Single Dual Common Cathode Single Single Single Single Single
1028
TO-236AB, SOT-23 Case 318-08 Page 1101
SOD-323 Case 477-02 Page 1106
Devices listed bold italic Semiconductor preferred devices.
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Schottky Diodes
Device Volts Volts Volts 0.37 0.75 0.75 0.37 0.32 2000 2000 1000 1000 1000 2000 2000 2000 2000 2000 1000 2000 Volts Type Package Page
MBD701 MBD301 MBD101 BAT54T1 MMSD301T1 MMSD701T1 BAT54HT1 MMDL101T1 MMDL301T1 MMDL770T1 RB751V40T1 BAS40LT1 BAS40-04LT1 BAS40-06LT1 BAS70LT1 BAS70-04LT1 BAT54LT1 BAT54ALT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 MMBD452LT1 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 BAT54WT1 BAT54SWT1 MMBD330T1 MMBD770T1 MMBD717LT1 MMBD352WT1 MBD54DWT1 MBD330DWT1 MBD770DWT1 MBD110DWT1
Single Single Single Single Single Single Single Single Single Single Single Single Dual Series Dual Common Anode Single Dual Series Single Dual Common Anode Dual Series Single Single Single Dual Series Dual Series Dual Series Dual Common Cathode Dual Common Anode Single Dual Series Single Single Dual Common Anode Dual Series Dual Series Dual Series Dual Series Dual Series
SC-88, SOT-363 Case 419B-02 Page 1105 SOD-323 Case 477-02 Page 1106 SOD-123 Case 425-04 Page 1105 TO-226AC, TO-92 2-Lead Case 182-06 Page 1101
1074
TO-236AB, SOT-23 Case 318-08 Page 1101
SC-70, SOT-323 Case 419-04 Page 1104
Devices listed bold italic Semiconductor preferred devices.
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Switching Diodes
Switching Diodes
Device Volts Volts Resistance Type Package Page
MPN3700
Single
TO-226AC, TO-92 226AC 2-Lead Case 182-06 Page 1101
MPN3404
0.85
Single
MSD6100
Dual Common Cathode
MSD6150
Dual Common Anode
TO-226AA, TO-92 Case 29-11 Page 1100
MMBV3700LT1
Single Single Single Single
SOD-323 Case 477-02 Page 1106 TO-236AB, SOT-23 Case 318-08 Page 1101
MMBV3401LT1 MMVL3700T1 MMVL3401T1
Devices listed bold italic Semiconductor preferred devices.
General-Purpose Signal Switching Diodes
Device Volts 0.005 Volts 0.85 0.75 0.85 Volts 3000 3000 Type Single Dual Series Single Single Single Single Single Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Common Anode Dual Common Cathode Dual Series Package Page
BAS21LT1 BAS21SLT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1 BAS116LT1 MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1 BAV199LT1
TO-236AB, SOT-23 Case 318-08 Page 1101
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General-Purpose Signal Switching Diodes
Device Volts 0.02 Volts Volts 1.25 Type Single Single Single Single Dual Common Anode Dual Common Cathode Dual Common Anode Dual Common Cathode Single Single Single Single Dual Common Cathode Dual Common Anode Dual Common Anode Dual Common Cathode Dual Series Dual Series Dual Common Cathode Dual Common Anode Dual Common Anode Single Single Single Single Single Single Single Single Single Single Single Dual Common Anode Dual Common Anode Dual Common Cathode Dual Common Cathode
SOD-123 Case 425-04 Page 1105
Package
Page
M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 DAP202U MMSD914T1
MMSD71RKT1
SC-59 Case 318D-04 Page 1102
0.85
SC-70, SOT-323 Case 419-04 Page 1104
MMSD103T1 MMSD4148T1 BAS16HT1 BAS20HT1 BAS21HT1 MMDL914T1 MMDL6050T1 BAS16TT1 DA121TT1 DAP222 BAW56TT1 DAN222 BAV70TT1
SOD-323 Case 477-02 Page 1106
SOT-416, SC-75, SC-90 Case 463-01 Page 1106
Devices listed bold italic Semiconductor preferred devices.
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CHAPTER Data Sheets
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2N3903, 2N3904
2N3903 Preferred Device
General Purpose Transistors
Silicon
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COLLECTOR Symbol VCEO VCBO VEBO Tstg +150 Watts mW/°C mW/°C TO-92 CASE STYLE Value Unit mAdc EMITTER STYLE BASE
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range
MARKING DIAGRAMS
3903 3904
THERMAL CHARACTERISTICS (Note
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol 83.3 Unit °C/W °C/W Year Work Week
Indicates Data addition JEDEC Requirements.
ORDERING INFORMATION
Device 2N3903 2N3903RLRM 2N3904 2N3904RLRA 2N3904RLRE 2N3904RLRM 2N3904RLRP 2N3904RL1 2N3904ZL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Tape Reel 2000/Tape Reel 2000/Ammo Pack 2000/Ammo Pack 2000/Tape Reel 2000/Ammo Pack
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
December, 2000 Rev.
Publication Order Number: 2N3903/D
2N3903, 2N3904
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX nAdc nAdc
CHARACTERISTICS
Current Gain (Note mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage (Note mAdc, mAdc) mAdc, mAdc Base-Emitter Saturation Voltage (Note mAdc, mAdc) mAdc, mAdc) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) Noise Figure mAdc, Vdc, kHz) 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 mmhos 2N3903 2N3904 Cobo Cibo 10-4
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Pulse Test: Pulse Width Duty Cycle (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc) 2N3903 2N3904
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2N3903, 2N3904
DUTY CYCLE +10.9 -0.5 -9.1 DUTY CYCLE +10.9 1N916
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) CHARGE (pC) Cibo 5000 3000 2000 1000 IC/IB
Cobo
REVERSE BIAS VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure Charge Data
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2N3903, 2N3904
COLLECTOR CURRENT (mA) IC/IB RISE TIME (ns) IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
STORAGE TIME (ns) IC/IB IC/IB FALL TIME (ns)
Figure Rise Time
IC/IB
IC/IB IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Storage Time
Figure Fall Time
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE Vdc, 25°C, Bandwidth
NOISE FIGURE (dB) NOISE FIGURE (dB)
SOURCE RESISTANCE SOURCE RESISTANCE SOURCE RESISTANCE
SOURCE RESISTANCE
FREQUENCY (kHz)
SOURCE RESISTANCE OHMS)
Figure
Figure
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2N3903, 2N3904
PARAMETERS
(VCE Vdc, kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos) COLLECTOR CURRENT (mA)
CURRENT GAIN
COLLECTOR CURRENT (mA)
Figure Current Gain
INPUT IMPEDANCE OHMS)
Figure Output Admittance
VOLTAGE FEEDBACK RATIO
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
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2N3903, 2N3904
TYPICAL STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED)
+125°C +25°C
-55°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
25°C 0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
VOLTAGE (VOLTS)
25°C
VBE(sat) IC/IB COEFFICIENT (mV/ -0.5 -1.0 -1.5 VBE(sat) -55°C +25°C +25°C +125°C VCE(sat) -55°C +25°C +25°C +125°C
=1.0
VCE(sat) IC/IB
-2.0
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
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2N3906
Preferred Device
General Purpose Transistors
Silicon
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COLLECTOR Symbol VCEO VCBO VEBO Tstg +150 Watts mW/°C 3906 Unit °C/W °C/W Year Work Week mW/°C TO-92 CASE STYLE Value Unit mAdc BASE EMITTER STYLE
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Power Dissipation 60°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range
MARKING DIAGRAMS
THERMAL CHARACTERISTICS (Note
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol 83.3
Indicates Data addition JEDEC Requirements.
ORDERING INFORMATION
Device 2N3906 2N3906RLRA 2N3906RLRE 2N3906RLRM 2N3906RLRP 2N3906RL1 2N3906ZL1 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 2000/Tape Reel 2000/Tape Reel 2000/Ammo Pack 2000/Ammo Pack 2000/Tape Reel 2000/Ammo Pack
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
October, 2001 Rev.
Publication Order Number: 2N3906/D
2N3906
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX nAdc nAdc
CHARACTERISTICS (Note
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc Base-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) Noise Figure mAdc, Vdc, kHz) Cobo Cibo mmhos 10-4
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc)
Pulse Test: Pulse Width Duty Cycle
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2N3906
+9.1 +0.5 10.6 DUTY CYCLE DUTY CYCLE 10.9 1N916
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) CHARGE (pC) Cobo Cibo 5000 3000 2000 1000 IC/IB
REVERSE BIAS (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
FALL TIME (ns)
Figure Charge Data
IC/IB
IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
IC/IB
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Fall Time
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2N3906
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE -5.0 Vdc, 25°C, Bandwidth
SOURCE RESISTANCE FREQUENCY (kHz) SOURCE RESISTANCE NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE SOURCE RESISTANCE OHMS)
NOISE FIGURE (dB)
Figure
Figure
PARAMETERS
(VCE Vdc, kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos)
CURRENT GAIN
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO INPUT IMPEDANCE OHMS)
Figure Output Admittance
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
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2N3906
TYPICAL STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED)
+125°C +25°C -55°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
25°C 0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C
VBE(sat) IC/IB
TEMPERATURE COEFFICIENTS (mV/
VOLTAGE (VOLTS)
-0.5 +25°C +125°C -1.0 -1.5 -2.0 VBE(sat) -55°C +25°C VCE(sat) +25°C +125°C -55°C +25°C
VCE(sat) IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
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Semiconductort
General Purpose Transistors
Silicon
2N4401
Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
COLLECTOR BASE EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX µAdc µAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N4401/D
2N4401
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
VCE(sat) VBE(sat) 0.75 0.75 0.95
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) µmhos 10-4 ohms
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, Vdc, mAdc, mAdc) (VCC Vdc, mAdc, mAdc)
Pulse Test: Pulse Width Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-2.0 DUTY CYCLE 2.0% DUTY CYCLE 2.0%
-4.0 Scope rise time *Total shunt capacitance test connectors, oscilloscope
Figure Turn-On Time
Figure Turn-Off Time
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2N4401
TRANSIENT CHARACTERISTICS
25°C CAPACITANCE (pF) CHARGE (nC) Cobo REVERSE VOLTAGE (VOLTS) 100°C COLLECTOR CURRENT (mA)
IC/IB
Figure Capacitances
Figure Charge Data
TIME (ns) TIME (ns) IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Rise Fall Times
STORAGE TIME (ns)
IC/IB FALL TIME (ns)
IC/IB IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Storage Time
Figure Fall Time
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2N4401
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE Vdc, 25°C; Bandwidth
NOISE FIGURE (dB) 0.01 0.02 0.05 FREQUENCY (kHz) OPTIMUM SOURCE RESISTANCE NOISE FIGURE (dB)
SOURCE RESISTANCE (OHMS)
Figure Frequency Effects
Figure Source Resistance Effects
PARAMETERS Vdc, kHz, 25°C
This group graphs illustrates relationship between other parameters this series transistors. obtain these curves, high-gain low-gain unit were
INPUT IMPEDANCE (OHMS) CURRENT GAIN
selected from 2N4401 lines, same units were used develop correspondingly numbered curves each graph.
2N4401 UNIT 2N4401 UNIT
2N4401 UNIT 2N4401 UNIT
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO 10-4 hoe, OUTPUT ADMITTANCE mhos)
Figure Input Impedance
2N4401 UNIT 2N4401 UNIT
2N4401 UNIT 2N4401 UNIT
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Voltage Feedback Ratio http://onsemi.com
Figure Output Admittance
2N4401
STATIC CHARACTERISTICS
NORMALIZED CURRENT GAIN 125°C COLLECTOR CURRENT (mA) 25°C -55°C
Figure Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01 25°C
0.02 0.03
0.05 0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
VOLTAGE (VOLTS)
25°C
+0.5 VBE(sat) IC/IB COEFFICIENT (mV/ -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR CURRENT (mA) VCE(sat)
VCE(sat) IC/IB
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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Semiconductort
General Purpose Transistors
Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watt mW/°C
2N4403
Semiconductor Preferred Device
CASE 29-11, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W BASE
COLLECTOR
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol
EMITTER Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Base Cutoff Current (VCE Vdc, Vdc) Collector Cutoff Current (VCE Vdc, Vdc) Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX µAdc µAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N4403/D
2N4403
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc)(1) mAdc, Vdc)(1) Collector-Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) Base-Emitter Saturation Voltage(1) mAdc, mAdc) mAdc, mAdc) VCE(sat) VBE(sat) 0.75 0.95 0.75
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Voltage Feedback Ratio mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Output Admittance mAdc, Vdc, kHz) µmhos 10-4 ohms
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, +2.0 Vdc, mAdc, mAdc) (VCC Vdc, mAdc,
Pulse Test: Pulse Width Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
DUTY CYCLE DUTY CYCLE
+4.0 Scope rise time *Total shunt capacitance test connectors, oscilloscope
Figure Turn-On Time
Figure Turn-Off Time
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2N4403
TRANSIENT CHARACTERISTICS
25°C CAPACITANCE (pF) CHARGE (nC) REVERSE VOLTAGE (VOLTS) 100°C
IC/IB
COLLECTOR CURRENT (mA)
Figure Capacitances
Figure Charge Data
TIME (ns) RISE TIME (ns) VBE(off) VBE(off) IC/IB
IC/IB
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Rise Time
IC/IB STORAGE TIME (ns) IC/IB
COLLECTOR CURRENT (mA)
Figure Storage Time
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2N4403
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE Vdc, 25°C; Bandwidth
NOISE FIGURE (dB) 0.01 0.02 0.05 OPTIMUM SOURCE RESISTANCE NOISE FIGURE (dB)
FREQUENCY (kHz)
SOURCE RESISTANCE (OHMS)
Figure Frequency Effects
Figure Source Resistance Effects
PARAMETERS Vdc, kHz, 25°C
This group graphs illustrates relationship between other parameters this series transistors. obtain these curves, high-gain low-gain unit were
1000 CURRENT GAIN 2N4403 UNIT 2N4403 UNIT
selected from 2N4403 lines, same units were used develop correspondingly-numbered curves each graph.
INPUT IMPEDANCE (OHMS) 2N4403 UNIT 2N4403 UNIT
COLLECTOR CURRENT (mAdc)
COLLECTOR CURRENT (mAdc)
Figure Current Gain
VOLTAGE FEEDBACK RATIO 10-4 2N4403 UNIT 2N4403 UNIT hoe, OUTPUT ADMITTANCE mhos)
Figure Input Impedance
2N4403 UNIT 2N4403 UNIT
Figure Voltage Feedback Ratio http://onsemi.com
COLLECTOR CURRENT (mAdc)
Figure Output Admittance
COLLECTOR CURRENT (mAdc)
2N4403
STATIC CHARACTERISTICS
NORMALIZED CURRENT GAIN
125°C 25°C
COLLECTOR CURRENT (mA) -55°C
Figure Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005
0.01
0.02
0.03
0.05 0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
VOLTAGE (VOLTS)
25°C VBE(sat) IC/IB COEFFICIENT (mV/ VBE(sat)
COLLECTOR CURRENT (mA) VCE(sat)
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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Semiconductort
Amplifier Transistor
Silicon
2N4410
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
COLLECTOR BASE EMITTER Symbol Unit
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Emitter Breakdown Voltage µAdc, Vdc, ohms) Collector-Base Breakdown Voltage µAdc, Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO IEBO 0.01 µAdc µAdc
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N4410/D
2N4410
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc) VCE(sat) VBE(sat) VBE(on)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(2) mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz, emitter guarded) Emitter-Base Capacitance (VEB Vdc, MHz, collector guarded) |hfe| ftest.
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2N4410
CURRENT GAIN -55°C 125°C 25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
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2N4410
COLLECTOR CURRENT 10-1 10-2 10-3 10-4 10-5
125°C
ICES
75°C REVERSE 25°C FORWARD
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
TEMPERATURE COEFFICIENT (mV/°C)
VOLTAGE (VOLTS)
25°C
-0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR CURRENT (mA) VBE(sat) VCE(sat) -55°C +135°C
VBE(sat) IC/IB
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
CAPACITANCE (pF) 10.2 INPUT PULSE DUTY CYCLE 1.0% 0.25 -8.8 1N914 Vout Cibo
25°C
Cobo
Values Shown
REVERSE VOLTAGE (VOLTS)
Figure Switching Time Test Circuit
Figure Capacitances
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2N4410
1000 TIME (ns) VEB(off) IC/IB 25°C 5000 3000 2000 1000 COLLECTOR CURRENT (mA) IC/IB 25°C
COLLECTOR CURRENT (mA)
Figure Turn-On Time
TIME (ns)
Figure Turn-Off Time
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Amplifier Transistor
Silicon
2N5087
Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc mW/°C Watts mW/°C COLLECTOR Symbol RqJA RqJC 83.3 Unit °C/W °C/W EMITTER BASE
CASE 29-11, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO nAdc nAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N5087/D
2N5087
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) mAdc, Vdc) mAdc, Vdc)(1) Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc) VCE(sat) VBE(on) 0.85
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%.
TYPICAL NOISE CHARACTERISTICS
(VCE -5.0 Vdc, 25°C)
NOISE VOLTAGE (nV) NOISE CURRENT (pA) FREQUENCY (Hz) FREQUENCY (Hz)
BANDWIDTH
BANDWIDTH
Figure Noise Voltage
Figure Noise Current
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2N5087
NOISE FIGURE CONTOURS
(VCE -5.0 Vdc, 25°C)
COLLECTOR CURRENT (µA)
SOURCE RESISTANCE (OHMS)
SOURCE RESISTANCE (OHMS)
BANDWIDTH
BANDWIDTH
COLLECTOR CURRENT (µA)
Figure Narrow Band,
Figure Narrow Band,
SOURCE RESISTANCE (OHMS)
15.7
Noise Figure Defined 4KTRS 2RS2 4KTRS Noise Voltage Transistor referred input. (Figure Noise Current Transistor referred input. (Figure Boltzman's Constant (1.38 10-23 j/°K) Temperature Source Resistance (°K) Source Resistance (Ohms) log10
COLLECTOR CURRENT (µA)
Figure Wideband
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2N5087
TYPICAL STATIC CHARACTERISTICS
125°C 25°C
CURRENT GAIN
-55°C 0.003 0.005 0.01 0.02 0.03 0.05 0.07 COLLECTOR CURRENT (mA)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.002 0.005 0.01 0.02 0.05 BASE CURRENT (mA)
25°C COLLECTOR CURRENT (mA)
25°C PULSE WIDTH DUTY CYCLE 2.0%
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Collector Saturation Region
Figure Collector Characteristics
VOLTAGE (VOLTS)
25°C
TEMPERATURE COEFFICIENTS (mV/°C)
*APPLIES IC/IB hFE/2 25°C 125°C -55°C 25°C *qVC VCE(sat) 25°C 125°C -55°C 25°C
VBE(sat) IC/IB VBE(on)
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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2N5087
TYPICAL DYNAMIC CHARACTERISTICS
VBE(off) 1000 TIME (ns) -1.0 -2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA) -100
IC/IB 25°C
-3.0 IC/IB 25°C
TIME (ns)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
BANDWIDTH PRODUCT (MHz)
Figure Turn-Off Time
25°C CAPACITANCE (pF)
25°C
CURRENT-GAIN
0.05
COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure Current-Gain Bandwidth Product
Figure Capacitance
INPUT IMPEDANCE
hoe, OUTPUT ADMITTANCE mhos)
25°C
25°C
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Output Admittance
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2N5087
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.05 0.02 0.01 SINGLE PULSE 0.05 TIME (ms) FIGURE P(pk)
DUTY CYCLE, t1/t2 CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME (SEE AN-569) ZqJA(t) r(t) RqJA TJ(pk) P(pk) ZqJA(t)
0.01 0.01 0.02
Figure Thermal Response
COLLECTOR CURRENT (mA) 25°C 25°C 150°C
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
safe operating area curves indicate IC-VCE limits transistor that must observed reliable operation. Collector load lines specific circuits must fall below limits indicated applicable curve. data Figure based upon TJ(pk) 150°C; variable depending upon conditions. Pulse curves valid duty cycles provided TJ(pk) 150°C. TJ(pk) calculated from data Figure high case ambient temperatures, thermal limitations will reduce power than handled values less than limitations imposed second breakdown.
DESIGN NOTE: THERMAL RESPONSE DATA
Figure Active-Region Safe Operating Area
COLLECTOR CURRENT (nA) 10-1 10-2 ICEO
ICBO ICEX VBE(off)
+100 +120 +140 +160 JUNCTION TEMPERATURE (°C)
train periodical power pulses represented model shown Figure Using model device thermal response normalized effective transient thermal resistance Figure calculated various duty cycles. find ZJA(t), multiply value obtained from Figure steady state value RJA. Example: 2N5087 dissipating watts peak under following conditions: 0.2) Using Figure pulse width 0.2, reading r(t) 0.22. peak rise junction temperature therefore r(t) P(pk) 0.22 88°C. more information, Semiconductor Application Note AN569/D, available from Literature Distribution Center website www.onsemi.com.
Figure Typical Collector Leakage Current
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Semiconductort
Amplifier Transistors
Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5088 +150 2N5089 Unit mAdc mW/°C Watts mW/°C
2N5088 2N5089
CASE 29-11, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA
COLLECTOR 83.3 Unit °C/W °C/W EMITTER Symbol Unit BASE
RqJC
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) mAdc, Collector-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, Emitter Cutoff Current (VEB(off) Vdc, (VEB(off) Vdc, measured with device soldered into typical printed circuit board. Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO nAdc nAdc
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N5088/D
2N5088 2N5089
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain µAdc, Vdc) 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 1200
mAdc, Vdc) mAdc, Vdc)(2) Collector-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc)(2)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product µAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5088 2N5089 2N5088 2N5089 1400 1800
IDEAL TRANSISTOR
Figure Transistor Noise Model
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2N5088 2N5089
NOISE CHARACTERISTICS
(VCE Vdc, 25°C) NOISE VOLTAGE
NOISE VOLTAGE (nV) BANDWIDTH NOISE VOLTAGE (nV) BANDWIDTH
FREQUENCY (Hz)
0.01 0.02
0.05 COLLECTOR CURRENT (mA)
Figure Effects Frequency
NOISE CURRENT (pA) NOISE FIGURE (dB)
Figure Effects Collector Current
BANDWIDTH
BANDWIDTH 15.7
FREQUENCY (Hz)
SOURCE RESISTANCE (OHMS)
Figure Noise Current NOISE DATA
TOTAL NOISE VOLTAGE (nV) BANDWIDTH NOISE FIGURE (dB)
Figure Wideband Noise Figure
BANDWIDTH
SOURCE RESISTANCE (OHMS)
SOURCE RESISTANCE (OHMS)
Figure Total Noise Voltage
Figure Noise Figure
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2N5088 2N5089
CURRENT GAIN (NORMALIZED)
125°C 25°C
0.01 0.02 0.03 0.05 COLLECTOR CURRENT (mA) -55°C
Figure Current Gain
VOLTAGE (VOLTS) 0.01 0.02 0.05 COLLECTOR CURRENT (mA) VCE(sat) IC/IB RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ 25°C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0.01 0.02 0.05 COLLECTOR CURRENT (mA) 25°C 125°C
-55°C 25°C
Figure "On" Voltages
BANDWIDTH PRODUCT (MHz)
Figure Temperature Coefficients
CAPACITANCE (pF) 25°C
CURRENT-GAIN
25°C COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
Figure Current-Gain Bandwidth Product
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Semiconductort
Amplifier Transistors
Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5400 +150 2N5401 Unit mAdc mW/°C Watts mW/°C
2N5401*
Semiconductor Preferred Device
CASE 29-11, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W BASE
COLLECTOR
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol
EMITTER Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5401 2N5401 IEBO V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO nAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
VCE(sat) VBE(sat)
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. Cobo
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2N5401
CURRENT GAIN -55°C -1.0 -5.0 COLLECTOR CURRENT (mA) 25°C 125°C
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
COLLECTOR CURRENT 125°C 10-1 10-2 10-3 75°C REVERSE 25°C FORWARD ICES
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
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2N5401
VOLTAGE (VOLTS) VCE(sat) IC/IB VBE(sat) IC/IB TEMPERATURE COEFFICIENT (mV/ 25°C -0.5 -1.0 -1.5 -2.0 -2.5 VBE(sat) COLLECTOR CURRENT (mA) VCE(sat) -55°C 135°C
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
10.2 INPUT PULSE DUTY CYCLE 1.0%
CAPACITANCE (pF)
+8.8 0.25 1N914
Vout
REVERSE VOLTAGE (VOLTS) Cibo
25°C
Cobo
Values Shown
Figure Switching Time Test Circuit
Figure Capacitances
1000 TIME (ns)
IC/IB 25°C
2000 TIME (ns) 1000 IC/IB 25°C
VBE(off)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Turn-Off Time
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2N5457, 2N5458
2N5457 2N5458 Preferred Devices
JFETs General Purpose
N-Channel Depletion
N-Channel Junction Field Effect Transistors, depletion mode (Type designed audio switching applications.
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N-Channel Higher Gain Drain Source Interchangeable High Input Impedance High Input Resistance Transfer Input Capacitance Cross-Modulation Intermodulation Distortion Unibloc Plastic Encapsulated Package
DRAIN
GATE
SOURCE
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Total Device Dissipation 25°C Derate above 25°C Operating Junction Temperature Storage Temperature Range Tstg Symbol VGSR 2.82 +150 mW/°C Value Unit mAdc 5457
TO-92 CASE STYLE
MARKING DIAGRAMS
5458
Year Work Week
ORDERING INFORMATION
Device 2N5457 2N5458 Package TO-92 TO-92 Shipping 5000 Units/Box 5000 Units/Box
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
September, 2001 Rev.
Publication Order Number: 2N5638/D
2N5457, 2N5458
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage (VDS Vdc, nAdc) Gate-Source Voltage (VDS Vdc, µAdc) (VDS Vdc, µAdc) µAdc, (VGS Vdc, (VGS Vdc, 100°C) 2N5457 2N5458 2N5457 2N5458 V(BR)GSS IGSS VGS(off) -1.0 -2.0 -2.5 -3.5 -200 -6.0 -7.0 -6.0 -7.0 nAdc
CHARACTERISTICS
Zero-Gate-Voltage Drain Current (Note (VDS Vdc, 2N5638 2N5639 IDSS mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note (VDS Vdc, kHz) Forward Transfer Admittance (Note Input Capacitance Reverse Transfer Capacitance Pulse Width Duty Cycle 10%. NOISE FIGURE (dB) 0.001 0.01 SOURCE RESISTANCE (Megohms) 2N5638 2N5639 (VDS Vdc, kHz) (VDS Vdc, kHz) (VDS Vdc, kHz) |Yfs| |Yos| Ciss Crss 1000 1500 3000 4000 5000 5500 µmhos µmhos
Figure Noise Figure versus Source Resistance
VDS, DRAIN-SOURCE VOLTAGE (VOLTS) -0.2 VGS(off) -1.2 DRAIN CURRENT (mA) -1.2 VGS(off) -1.2
DRAIN CURRENT (mA)
-0.4 -0.6 -0.8 -1.0
-0.8 -0.4 VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure Typical Drain Characteristics
Figure Common Source Transfer Characteristics
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2N5457, 2N5458
VGS(off) -3.5 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) DRAIN CURRENT (mA) VGS(off) -3.5
DRAIN CURRENT (mA)
Figure Typical Drain Characteristics
Figure Common Source Transfer Characteristics
DRAIN CURRENT (mA) VDS, DRAIN-SOURCE VOLTAGE (VOLTS) DRAIN CURRENT (mA) VGS(off) -5.8
VGS(off) -5.8
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure Typical Drain Characteristics
Figure Common Source Transfer Characteristics
NOTE:
Note: Graphical data presented conditions. Tabular data given pulsed conditions (Pulse Width Duty Cycle 10%). Under conditions, self heating higher IDSS units reduces IDSS.
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Semiconductort
DRAIN
JFET Amplifiers
P-Channel Depletion
MAXIMUM RATINGS
Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VGSR IG(f) Tstg
GATE
SOURCE
2N5460 2N5461 2N5462
Value +135 +150
Unit mAdc mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Gate-Source Breakdown Voltage µAdc, Gate Reverse Current (VGS Vdc, (VGS Vdc, (VGS Vdc, 100°C) (VGS Vdc, 100°C) Gate-Source Cutoff Voltage (VDS Vdc, µAdc) Gate-Source Voltage (VDS Vdc, mAdc) (VDS Vdc, mAdc) (VDS Vdc, mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) 0.75 nAdc µAdc
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: 2N5460/D
2N5460 2N5461 2N5462
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Zero-Gate-Voltage Drain Current (VDS Vdc, kHz) 2N5460 2N5461 2N5462 IDSS -1.0 -2.0 -4.0 -5.0 -9.0 mAdc
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS Vdc, kHz) 2N5460 2N5461 2N5462 1000 1500 2000 4000 5000 6000 mmhos
Output Admittance (VDS Vdc, kHz) Input Capacitance (VDS Vdc, MHz) Reverse Transfer Capacitance (VDS Vdc, MHz)
Ciss Crss
mmhos
FUNCTIONAL CHARACTERISTICS
Equivalent Short-Circuit Input Noise Voltage (VDS Vdc,
Figure
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2N5460 2N5461 2N5462
DRAIN CURRENT versus GATE SOURCE VOLTAGE
DRAIN CURRENT (mA) VGS, GATE-SOURCE VOLTAGE (VOLTS) -55°C 25°C 125°C FORWARD TRANSFER ADMITTANCE mhos) 4000 3000 2000
FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT
1000 DRAIN CURRENT (mA)
Figure VGS(off) Volts
DRAIN CURRENT (mA) VGS, GATE-SOURCE VOLTAGE (VOLTS) -55°C 25°C 125°C FORWARD TRANSFER ADMITTANCE mhos) 10000 7000 5000 3000 2000
Figure VGS(off) Volts
1000 DRAIN CURRENT (mA)
Figure VGS(off) Volts
DRAIN CURRENT (mA) VGS, GATE-SOURCE VOLTAGE (VOLTS) -55°C 25°C 125°C FORWARD TRANSFER ADMITTANCE mhos) 10000 7000 5000 3000 2000
Figure VGS(off) Volts
1000 DRAIN CURRENT (mA)
Figure VGS(off) Volts
Figure VGS(off) Volts
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2N5460 2N5461 2N5462
1000 DRAIN CURRENT (mA) IDSS CAPACITANCE (pF) Coss Crss VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Ciss
OUTPUT RESISTANCE ohms)
Figure Output Resistance versus Drain Current
Figure Capacitance versus Drain-Source Voltage
NOISE FIGURE (dB) 1000 SOURCE RESISTANCE Ohms) 10,000
Figure Noise Figure versus Source Resistance
Crss Ciss ross Coss
COMMON SOURCE PARAMETERS FREQUENCIES BELOW Ciss Cosp 1/ross Crss
*Cosp Coss parallel with Series Combination Ciss Crss.
NOTE: Graphical data presented conditions. Tabular data given pulsed conditions (Pulse Width Duty Cycle 10%).
Figure Equivalent Frequency Circuit
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Semiconductort
JFET VHF/UHF Amplifiers
N-Channel Depletion
GATE
DRAIN
2N5486
SOURCE
MAXIMUM RATINGS
Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VGSR IG(f) Tstg Value +150
Unit mAdc mAdc mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Gate-Source Breakdown Voltage -1.0 µAdc, Gate Reverse Current (VGS Vdc, (VGS Vdc, 100°C) Gate Source Cutoff Voltage (VDS Vdc, nAdc) V(BR)GSS IGSS VGS(off) -2.0 -6.0 -1.0 -0.2 nAdc µAdc
CHARACTERISTICS
Zero-Gate-Voltage Drain Current (VDS Vdc, IDSS mAdc
SMALL-SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS Vdc, kHz) Input Admittance (VDS Vdc, MHz) Output Admittance (VDS Vdc, kHz) Output Conductance (VDS Vdc, MHz) Forward Transconductance (VDS Vdc, MHz) 4000 Re(yis) Re(yos) Re(yfs) 3500 mmhos mmhos 1000 mmhos 8000 mmhos mmhos
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: 2N5486/D
2N5486
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
SMALL-SIGNAL CHARACTERISTICS (continued)
Input Capacitance (VDS Vdc, MHz) Reverse Transfer Capacitance (VDS Vdc, MHz) Output Capacitance (VDS Vdc, MHz) Ciss Crss Coss
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS Vdc, Tchannel 25°C)
REVERSE TRANSADMITTANCE (mmhos) REVERSE SUSCEPTANCE (mmhos) IDSS IDSS, 0.25 IDSS FREQUENCY (MHz) 1000 IDSS 0.25 IDSS
gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos)
IDSS 0.25 IDSS
0.25 IDSS FREQUENCY (MHz) 1000
0.07 0.05
Figure Input Admittance (yis)
Figure Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos) fs|, FORWARD SUSCEPTANCE (mmhos)
|bfs| IDSS |bfs| 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
IDSS IDSS 0.25 IDSS
IDSS 0.25 IDSS
0.05 0.02 0.01 0.25 IDSS FREQUENCY (MHz) 1000
FREQUENCY (MHz)
1000
Figure Forward Transadmittance (yfs)
Figure Output Admittance (yos)
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2N5486
COMMON SOURCE CHARACTERISTICS
S-PARAMETERS (VDS Vdc, Tchannel 25°C, Data Points MHz)
350° 100° 110° 120° IDSS 290° 280° 270° 260° 250° 240° 100° 110° 120° 340° 330° 320° 350° 340° 330° 320° 0.25 IDSS 300° 310° IDSS, 0.25 IDSS 300° 290° 280° 270° 260° 250° 240°
310°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S11s
350° 340° 330° 320°
Figure S12s
350° 340° 330° 0.25 IDSS IDSS
320°
310°
310°
100° 110° 120° IDSS 0.25 IDSS
300° 290° 280° 270°
100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
260° 250° 240°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S21s http://onsemi.com
Figure S22s
2N5486
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG Vdc, Tchannel 25°C)
REVERSE TRANSADMITTANCE (mmhos) REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 0.07 0.05 0.03 0.02 0.01 IDSS, 0.25 IDSS FREQUENCY (MHz) 1000 0.25 IDSS IDSS
IDSS 0.25 IDSS
IDSS
0.25 IDSS FREQUENCY (MHz) 1000
0.007 0.005
Figure Input Admittance (yig)
Figure Reverse Transfer Admittance (yrg)
FORWARD TRANSCONDUCTANCE (mmhos) FORWARD SUSCEPTANCE (mmhos)
IDSS
0.25 IDSS
gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos)
IDSS
0.07 0.05 0.03 0.02 0.01
IDSS, 0.25 IDSS
IDSS
0.25 IDSS FREQUENCY (MHz)
0.25 IDSS FREQUENCY (MHz) 1000
1000
Figure Forward Transfer Admittance (yfg)
Figure Output Admittance (yog)
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2N5486
COMMON GATE CHARACTERISTICS
S-PARAMETERS (VDS Vdc, Tchannel 25°C, Data Points MHz)
100° 110° 120° IDSS 350° 340° 330° 320° 0.04 350° 340° 330° 320°
0.25 IDSS
0.03 290° 280° 270° 260° 250° 240° 100° 110° 120° IDSS 0.25 IDSS 0.01 0.01 290° 280° 270° 260° 250° 240° 310° 0.02 310°
300°
300°
0.02
130°
230°
130°
230° 0.03 220° 190° 200° 210°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170°
0.04 180°
Figure S11g
IDSS 310° 350° 340° 330° 320°
Figure S12g
350° 340° 310° 330° 320°
IDSS, 0.25 IDSS
100° 110° 120°
300° 0.25 IDSS 290° 280° 270° 260° 250° 240°
100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S21g http://onsemi.com
Figure S22g
Semiconductort
Amplifier Transistors
Silicon
2N5550 2N5551*
Semiconductor Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg 2N5550 +150 2N5551 Unit mAdc mW/°C Watts mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W BASE
COLLECTOR
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol
EMITTER Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage µAdc, Emitter-Base Breakdown Voltage µAdc, Collector Cutoff Current (VCB Vdc, (VCB Vdc, (VCB Vdc, 100°C) (VCB Vdc, 100°C) Emitter Cutoff Current (VEB Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO nAdc µAdc nAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
June, 2001 Rev.
Publication Order Number: 2N5550/D
2N5550 2N5551
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS(1)
2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 0.15 0.25 0.20
Current Gain mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Small-Signal Current Gain mAdc, Vdc, kHz) Noise Figure µAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N5550 2N5551 2N5550 2N5551 Cobo Cibo
CURRENT GAIN -55°C 125°C 25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
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2N5550 2N5551
COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.005 0.01 0.02 0.05 BASE CURRENT (mA)
Figure Collector Saturation Region
COLLECTOR CURRENT 10-1 10-2 10-3 10-4 10-5
125°C
ICES
75°C REVERSE 25°C FORWARD
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure Collector Cut-Off Region
TEMPERATURE COEFFICIENT (mV/°C)
VOLTAGE (VOLTS)
25°C
-0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR CURRENT (mA) VBE(sat) VCE(sat) -55°C +135°C
VBE(sat) IC/IB
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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2N5550 2N5551
CAPACITANCE (pF) 10.2 INPUT PULSE DUTY CYCLE 1.0% 0.25 -8.8 1N914 Vout Cibo Cobo 25°C
Values Shown
REVERSE VOLTAGE (VOLTS)
Figure Switching Time Test Circuit
1000 TIME (ns) VEB(off) 5000 3000 2000 1000
Figure Capacitances
IC/IB 25°C
IC/IB 25°C
TIME (ns)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Turn-On Time
Figure Turn-Off Time
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DRAIN
JFET Switching
N-Channel Depletion
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Device Dissipation 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol Tstg
GATE
2N5555
SOURCE
Value +150 +150
Unit mAdc mW/°C
CASE 29-11, STYLE TO-92 (TO-226AA)
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Gate-Source Breakdown Voltage µAdc, Gate Reverse Current (VGS Vdc, Drain Cutoff Current (VDS Vdc, Drain Cutoff Current (VDS Vdc, 100°C) V(BR)GSS IGSS ID(off) nAdc nAdc µAdc
CHARACTERISTICS
Zero-Gate-Voltage Drain Current(1) (VDS Vdc, Gate-Source Forward Voltage (IG(f) mAdc, Drain-Source On-Voltage mAdc, Static Drain-Source Resistance mAdc, Pulse Test: Pulse Width Duty Cycle 3.0%. IDSS VGS(f) VDS(on) rDS(on) mAdc Ohms
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Drain-Source "ON" Resistance (VGS kHz) Input Capacitance (VDS Vdc, MHz) Reverse Transfer Capacitance (VDS Vdc, MHz) rds(on) Ciss Crss Ohms
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD Vdc, ID(on) mAdc, VGS(on) VGS(off) Vdc) (See Figure (VDD Vdc, ID(on) mAdc, VGS(on) VGS(off) Vdc) (See Figure td(on) td(off)
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: 2N5555/D
2N5555
PULSE WIDTH PULSE GENERATOR OHMS) COAXIAL CABLE COAXIAL CABLE TEKTRONIX SAMPLING SCOPE INPUT INPUT PULSE RISE TIME VGS(on) VGS(off)
INPUT PULSE FALL TIME
OHMS td(on) td(off) OUTPUT
INPUT PULSE RISE TIME FALL TIME NOMINAL VALUE PULSE WIDTH DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE OHMS
Figure Switching Times Test Circuit
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS Vdc, Tchannel 25°C)
REVERSE TRANSADMITTANCE (mmhos) REVERSE SUSCEPTANCE (mmhos) IDSS IDSS, 0.25 IDSS FREQUENCY (MHz) IDSS 0.25 IDSS
gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos)
IDSS 0.25 IDSS
0.25 IDSS FREQUENCY (MHz) 1000
0.07 0.05
Figure Input Admittance (yis)
Figure Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos) fs|, FORWARD SUSCEPTANCE (mmhos)
|bfs| IDSS |bfs| 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
IDSS IDSS 0.25 IDSS
IDSS 0.25 IDSS
0.05 0.02 0.01 0.25 IDSS FREQUENCY (MHz)
FREQUENCY (MHz)
1000
Figure Forward Transadmittance (yfs) http://onsemi.com
Figure Output Admittance (yos)
2N5555
COMMON SOURCE CHARACTERISTICS
S-PARAMETERS (VDS Vdc, Tchannel 25°C, Data Points MHz)
350° 100° 110° 120° IDSS 290° 280° 270° 260° 250° 240° 100° 110° 120° 340° 330° 320° 350° 340° 330° 320° 0.25 IDSS 300° 310° IDSS, 0.25 IDSS 300° 290° 280° 270° 260° 250° 240°
310°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S11s
350° 340° 330° 320°
Figure S12s
350° 340° 330° 0.25 IDSS IDSS 320°
310°
310°
100° 110° 120° IDSS 0.25 IDSS
300° 290° 280° 270°
100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
260° 250° 240°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S21s http://onsemi.com
Figure S22s
2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG Vdc, Tchannel 25°C)
REVERSE TRANSADMITTANCE (mmhos) REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 0.07 0.05 0.03 0.02 0.01 IDSS, 0.25 IDSS FREQUENCY (MHz) 1000 0.25 IDSS IDSS
IDSS 0.25 IDSS
IDSS
0.25 IDSS FREQUENCY (MHz) 1000
0.007 0.005
Figure Input Admittance (yig)
Figure Reverse Transfer Admittance (yrg)
FORWARD TRANSCONDUCTANCE (mmhos) FORWARD SUSCEPTANCE (mmhos)
IDSS
0.25 IDSS
gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos)
IDSS
0.07 0.05 0.03 0.02 0.01
IDSS, 0.25 IDSS
IDSS
0.25 IDSS FREQUENCY (MHz)
0.25 IDSS FREQUENCY (MHz) 1000
1000
Figure Forward Transfer Admittance (yfg)
Figure Output Admittance (yog)
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2N5555
COMMON GATE CHARACTERISTICS
S-PARAMETERS (VDS Vdc, Tchannel 25°C, Data Points MHz)
100° 110° 120° IDSS 350° 340° 330° 320° 0.04 350° 340° 330° 320°
0.25 IDSS
0.03 290° 280° 270° 260° 250° 240° 100° 110° 120° IDSS 0.25 IDSS 0.01 0.01 290° 280° 270° 260° 250° 240° 310° 0.02 310°
300°
300°
0.02
130°
230°
130°
230° 0.03 220° 190° 200° 210°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170°
0.04 180°
Figure S11g
IDSS 310° 350° 340° 330° 320°
Figure S12g
350° 340° 310° 330° 320°
IDSS, 0.25 IDSS
100° 110° 120°
300° 0.25 IDSS 290° 280° 270° 260° 250° 240°
100° 110° 120°
300° 290° 280° 270° 260° 250° 240°
130°
230°
130°
230°
140° 150° 160° 170° 180° 190° 200° 210°
220°
140° 150° 160° 170° 180° 190° 200° 210°
220°
Figure S21g http://onsemi.com
Figure S22g
2N5638, 2N5639
2N5638 Preferred Device
JFET Chopper Transistors
N-Channel Depletion
N-Channel Junction Field Effect Transistors, depletion mode (Type designed chopper high-speed switching applications.
Drain-Source "ON" Resistance:
RDS(on) 2N5638 RDS(on) 2N5639 Reverse Transfer Capacitance Crss (Max) Fast Switching Characteristics (Max) (2N5638)
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DRAIN
GATE
SOURCE
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Device Dissipation 25°C Derate above 25°C Storage Temperature Range Operating Junction Temp Range Tstg Symbol VGSR 2.82 +150 +135 mW/°C Year Work Week Value Unit mAdc 5638 5639 TO-92 CASE STYLE
MARKING DIAGRAMS
(RDS(on) PULSE GENERATOR INPUT (SCOPE td(on) td(off) OUTPUT (SCOPE SCOPE TEKTRONIX 567A EQUIVALENT 0.001 SCOPE
ORDERING INFORMATION
Device 2N5638RLRA 2N5639 2N5369RLRA Package TO-92 TO-92 TO-92 Shipping 2000/Tape Reel 5000/Box 2000/Tape Reel
VGS(on) VGS(off)
Ohms SCOPE
Preferred devices recommended choices future best overall value.
Figure Switching Times Test Circuit
Semiconductor Components Industries, LLC, 2001
September, 2001 Rev.
Publication Order Number: 2N5638/D
2N5638, 2N5639
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Gate-Source Breakdown Voltage Gate Reverse Current -1.0 µAdc, (VGS Vdc, (VGS Vdc, 100°C) 2N5638 2N5638 2N5639 2N5639 V(BR)GSS IGSS ID(off) nAdc µAdc µAdc
Drain-Cutoff Current (VDS Vdc, Vdc) (VDS Vdc, Vdc, 100°C) (VDS Vdc, -8.0 Vdc) (VDS Vdc, -8.0 Vdc, 100°C)
CHARACTERISTICS
Zero-Gate-Voltage Drain Current (Note (VDS Vdc, Drain-Source "ON" Voltage mAdc, mAdc, Static Drain-Source "ON" Resistance mAdc, 2N5638 2N5639 2N5638 2N5639 RDS(on) 2N5638 2N5639 Ciss Crss IDSS VDS(on) mAdc
SMALL-SIGNAL CHARACTERISTICS
Static Drain-Source "ON" Resistance (VGS kHz) Input Capacitance Reverse Transfer Capacitance RDS(on) 2N5638 2N5639
(VDS Vdc, MHz) (VDS Vdc, MHz)
SWITCHING CHARACTERISTICS (VDD Vdc, VGS(on) VGS(off) Vdc, Figure page
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Pulse Width Duty Cycle 3.0%. ID(on) mAdc, 2N5638 ID(on) mAdc, 2N5639 ID(on) mAdc, 2N5638 ID(on) mAdc, 2N5639 ID(on) mAdc, 2N5638 ID(on) mAdc, 2N5639 ID(on) mAdc, 2N5638 ID(on) mAdc, 2N5639 td(on) td(off)
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Semiconductort
Darlington Transistors
Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO Tstg Value +150 Unit mAdc
2N6426* 2N6427
Semiconductor Preferred Device
mW/°C Watts mW/°C
CASE 29-04, STYLE TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W COLLECTOR BASE
EMITTER
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage mAdc, Collector-Base Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Collector Cutoff Current (VCB= Vdc, Emitter Cutoff Current (VEB= Vdc, Pulse Test: Pulse Width Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO mAdc nAdc nAdc
Semiconductor Components Industries, LLC, 2001
February, 2001 Rev.1
Publication Order Number: 2N6426/D
2N6426 2N6427
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS
Current Gain(1) mAdc, Vdc) 2N6426 2N6427 2N6426 2N6427 2N6426 2N6427 VCE(sat) VBE(sat) VBE(on) 0.71 1.52 1.24 1.75 20,000 10,000 30,000 20,000 20,000 14,000 200,000 100,000 300,000 200,000 200,000 140,000
mAdc, Vdc)
mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc Base-Emitter Saturation Voltage mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance (VCB Vdc, MHz) Input Capacitance (VEB Vdc, MHz) Input Impedance mAdc, Vdc, kHz) Small-Signal Current Gain mAdc, Vdc, kHz) Current-Gain High Frequency mAdc, Vdc, MHz) Output Admittance mAdc, Vdc, kHz) Noise Figure mAdc, Vdc, kHz) Pulse Test: Pulse Width Duty Cycle 2.0%. 2N6426 2N6427 2N6426 2N6427 |hfe| 2N6426 2N6427 1000 mmhos 20,000 10,000 Cobo Cibo 2000 1000
IDEAL TRANSISTOR
Figure Transistor Noise Model
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2N6426 2N6427
NOISE CHARACTERISTICS
(VCE Vdc, 25°C)
0.07 0.05 0.03 FREQUENCY (Hz) 0.02 FREQUENCY (Hz)
BANDWIDTH NOISE CURRENT (pA)
BANDWIDTH
NOISE VOLTAGE (nV)
Figure Noise Voltage
Figure Noise Current
TOTAL WIDEBAND NOISE VOLTAGE (nV)
BANDWIDTH 15.7 NOISE FIGURE (dB)
SOURCE RESISTANCE 1000
BANDWIDTH 15.7
SOURCE RESISTANCE
1000
Figure Total Wideband Noise Voltage
Figure Wideband Noise Figure
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2N6426 2N6427
SMALL-SIGNALCHARACTERISTICS
25°C SMALL-SIGNAL CURRENT GAIN
CAPACITANCE (pF)
25°C
Cibo Cobo
0.04
REVERSE VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure High Frequency Current Gain
125°C
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
hFE, CURRENT GAIN
25°C
-55°C
COLLECTOR CURRENT (mA)
BASE CURRENT (µA)
1000
Figure Current Gain
Figure Collector Saturation Region
TEMPERATURE COEFFICIENTS (mV/°C)
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB 1000 VBE(on)
-1.0 -2.0 -3.0
*APPLIES IC/IB hFE/3.0 *RqVC VCE(sat)
25°C 125°C
-55°C 25°C
25°C 125°C -4.0 -5.0 -6.0 -55°C 25°C
VCE(sat) IC/IB 1000 COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "On" Voltages
Figure Temperature Coefficients
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2N6426 2N6427
0.07 0.05 0.03 0.02 0.01 TIME (ms)
0.05 SINGLE PULSE SINGLE PULSE ZJC(t) r(t) TJ(pk) P(pk) ZJC(t) ZJA(t) r(t) TJ(pk) P(pk) ZJA(t)
RESISTANCE (NORMALIZED)
Figure Thermal Response
COLLECTOR CURRENT (mA)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 25°C 25°C
FIGURE
DUTY CYCLE PEAK PULSE POWER
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Active Region Safe Operating Area
Design Note: Transient Thermal Resistance Data
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Semiconductort
High Voltage Transistors
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation 25°C Derate above 25°C Total Device Dissipation 25°C Derate above 25°C Operating Storage Junction Temperature Range Symbol VCEO VCBO VEBO +150 mAdc mAdc mW/°C Watts mW/°C 2N6515 2N6517 2N6520 Unit
2N6515 2N6517 2N6520
Voltage current negative transistors
CASE 29-04, STYLE TO-92 (TO-226AA)
Tstg
COLLECTOR BASE EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Thermal Resistance, Junction Case Symbol RqJA RqJC 83.3 Unit °C/W °C/W
COLLECTOR
BASE EMITTER
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) mAdc, Collector-Base Breakdown Voltage µAdc, Emitter-Base Breakdown Voltage µAdc, Pulse Test: Pulse Width Duty Cycle 2.0%.
Semiconductor Components Industries, LLC, 2001
V(BR)CEO 2N6515 2N6517, 2N6520 V(BR)CBO 2N6515 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6520
October, 2001 Rev.
Publication Order Number: 2N6515/D
2N6515 2N6517 2N6520
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Symbol Unit
CHARACTERISTICS (Continued)
Collector Cutoff Current (VCB Vdc, (VCB Vdc, Emitter Cutoff Current (VEB Vdc, (VEB Vdc, ICBO 2N6515 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6520 nAdc nAdc
CHARACTERISTICS(1)
Current Gain mAdc, Vdc) 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 0.30 0.35 0.50
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc)
mAdc, Vdc) Collector-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) mAdc, mAdc) mAdc, mAdc) Base-Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) mAdc, mAdc) Base-Emitter Voltage mAdc, Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product(1) mAdc, Vdc, MHz) Collector-Base Capacitance (VCB Vdc, MHz) Emitter-Base Capacitance (VEB Vdc, MHz) 2N6515, 2N6517 2N6520
SWITCHING CHARACTERISTICS
Turn-On Time (VCC Vdc, VBE(off) Vdc, mAdc, mAdc) Turn-Off Time (VCC Vdc, mAdc, mAdc) Pulse Test: Pulse Width Duty Cycle 2.0%. toff
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2N6515 2N6517 2N6520
125°C
CURRENT GAIN
25°C
-55°C
COLLECTOR CURRENT (mA)
Figure Current Gain 2N6515
125°C CURRENT GAIN
125°C 25°C -55°C
CURRENT GAIN
25°C
-55°C
COLLECTOR CURRENT (mA)
-1.0
-2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA)
-100
Figure Current Gain 2N6517
Figure Current Gain 2N6520
BANDWIDTH PRODUCT (MHz)
25°C
BANDWIDTH PRODUCT (MHz)
25°C
CURRENT-GAIN
CURRENT-GAIN
COLLECTOR CURRENT (mA)
-1.0
-2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA)
-100
Figure Current-Gain Bandwidth Product 2N6515, 2N6517
Figure Current-Gain Bandwidth Product 2N6520
http://onsemi.com
2N6515 2N6517 2N6520
VOLTAGE (VOLTS)
25°C
-1.4 -1.2 VOLTAGE (VOLTS) -1.0 -0.8 -0.6 -0.4 -0.2 VCE(sat) IC/IB -1.0 VCE(sat) IC/IB VCE(sat) IC/IB -2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA) -100 VBE(sat) IC/IB VBE(on) 25°C
VBE(sat) IC/IB VBE(on)
VCE(sat) IC/IB COLLECTOR CURRENT (mA)
Figure "On" Voltages 2N6515, 2N6517
Figure "On" Voltages 2N6520
TEMPERATURE COEFFICIENTS (mV/°C)
25°C 125°C VCE(sat) -55°C 25°C -55°C 125°C COLLECTOR CURRENT (mA)
TEMPERATURE COEFFICIENTS (mV/°C)
-0.5 -1.0 -1.5 -2.0 -2.5 -1.0
25°C 125°C -55°C 25°C
-0.5 -1.0 -1.5 -2.0 -2.5
VCE(sat)
-55°C 125°C -100
-2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA)
Figure Temperature Coefficients 2N6515, 2N6517
Figure Temperature Coefficients 2N6520
CAPACITANCE (pF)
25°C CAPACITANCE (pF)
25°C
REVERSE VOLTAGE (VOLTS)
-0.2
-0.5 -1.0 -2.0 -5.0 REVERSE VOLTAGE (VOLTS)
-100 -200
Figure Capacitance 2N6515, 2N6517 http://onsemi.com
Figure Capacitance 2N6520
2N6515 2N6517 2N6520
TIME (ns) COLLECTOR CURRENT (mA) VCE(off) IC/IB 25°C TIME (ns) -1.0 -2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA) -100 VCE(off) -100 IC/IB 25°C
VBE(off)
VBE(off)
Figure Turn-On Time 2N6515, 2N6517
Figure Turn-On Time 2N6520
TIME (ns)
VCE(off) IC/IB 25°C COLLECTOR CURRENT (mA) -1.0
VCE(off) -100 IC/IB 25°C
-2.0 -3.0 -5.0 -7.0 COLLECTOR CURRENT (mA)
-100
Figure Turn-Off Time 2N6515, 2N6517
Figure Turn-Off Time 2N6520
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2N6515 2N6517 2N6520
+VCC ADJUSTED VCE(off)
+10.8
SAMPLING SCOPE
-9.2 PULSE WIDTH DUTY CYCLE 1.0% TEST CIRCUIT, REVERSE VOLTAGE POLARITIES
1/2MSD7000
APPROXIMATELY -1.35
(ADJUST V(BE)off
Figure Switching Time Test Circuit
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.07 0.05 0.03 0.02 0.01
SINGLE PULSE SINGLE PULSE ZJC(t) r(t) TJ(pk) P(pk) ZJC(t) ZJA(t) r(t) TJ(pk) P(pk) ZJA(t)
0.05
TIME (ms)
Figure Thermal Response
COLLECTOR CURRENT (mA) 25°C 25°C CURRENT LIMIT THERMAL LIMIT (PULSE CURVES 25°C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6517, 2N6520
FIGURE
DUTY CYCLE PEAK PULSE POWER
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure Active Region Safe Operating Area
Design Note: Transient Thermal Resistance Data
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Semiconductort
Silicon General Purpose Amplifier Transistor
This transistor designed general purpose amplifier applications. This device housed SOT-416/SC-90 package which designed power surface mount applications, where board space premium. Reduces Board Space High hFE, 210-460 (typical) VCE(sat), Available 7-inch/3000 Unit Tape Reel
2SA1774
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MAXIMUM RATINGS 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO Value -6.0 -100 Unit mAdc
CASE 463-01, STYLE SOT-416/SC-90
COLLECTOR
DEVICE MARKING
2SA1774
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Symbol Tstg +150 Unit BASE EMITTER
Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS 25°C)
Characteristic Collector-Base Breakdown Voltage µAdc, Collector-Emitter Breakdown Voltage -1.0 mAdc, Emitter-Base Breakdown Voltage µAdc, Collector-Base Cutoff Current (VCB Vdc, Emitter-Base Cutoff Current (VEB -5.0 Vdc, Collector-Emitter Saturation Voltage(2) mAdc, -5.0 mAdc) Current (VCE -6.0 Vdc, -1.0 mAdc) Transition Frequency (VCE Vdc, -2.0 mAdc, MHz) Output Capacitance (VCB Vdc, Adc, MHz) Gain(2) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -0.5 -6.0 -0.5 -0.5 Unit
Device mounted FR-4 glass epoxy printed circuit board using minimum recommended footprint. Pulse Test: Pulse Width D.C.
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: 2SA1774/D
2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000 COLLECTOR CURRENT (mA) 25°C CURRENT GAIN 75°C -25°C 25°C
VCE, COLLECTOR VOLTAGE
COLLECTOR CURRENT (mA)
Figure
COLLECTOR EMITTER VOLTAGE 25°C COLLECTOR VOLTAGE (mV) 0.01 BASE CURRENT (mA)
Figure Current Gain
25°C
COLLECTOR CURRENT (mA)
Figure Collector Saturation Region
Cib, INPUT CAPACITANCE (pF) CAPACITANCE (pF)
Figure Voltage
Figure Capacitance
Figure Capacitance
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Semiconductort
Silicon General Purpose Amplifier Transistor
This transistor designed general purpose amplifier applications. This device housed SOT-416/SC-90 package which designed power surface mount applications, where board space premium. Reduces Board Space High hFE, 210-460 (typical) VCE(sat), Available 7-inch/3000 Unit Tape Reel
MAXIMUM RATINGS 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO Value Unit mAdc
2SC4617
GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
CASE 463-01, STYLE SOT-416/SC-90
DEVICE MARKING
2SC4617
COLLECTOR
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Symbol Tstg +150 Unit BASE EMITTER
Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS 25°C)
Characteristic Collector-Base Breakdown Voltage µAdc, Collector-Emitter Breakdown Voltage mAdc, Emitter-Base Breakdown Voltage µAdc, Collector-Base Cutoff Current (VCB Vdc, Emitter-Base Cutoff Current (VEB Vdc, Collector-Emitter Saturation Voltage(2) mAdc, mAdc) Current (VCE Vdc, mAdc) Transition Frequency (VCE Vdc, mAdc, MHz) Output Capacitance (VCB Vdc, Adc, MHz) Gain(2) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) Unit
Device mounted FR-4 glass epoxy printed circuit board using minimum recommended footprint. Pulse Test: Pulse Width D.C.
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: 2SC4617/D
2SC4617
TYPICAL ELECTRICAL CHARACTERISTICS
COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE 25°C CURRENT GAIN COLLECTOR CURRENT (mA) 75°C -25°C 1000 25°C
Figure
25°C COLLECTOR VOLTAGE (mV) 0.01 BASE CURRENT (mA)
Figure Current Gain
COLLECTOR EMITTER VOLTAGE
25°C
COLLECTOR CURRENT (mA)
Figure Collector Saturation Region
Cib, INPUT CAPACITANCE (pF) Cob, CAPACITANCE (pF)
Figure Voltage
Figure Capacitance
Figure Capacitance
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Semiconductort
Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Symbol Value Unit
BAL99LT1
mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) 25°C Derate above 25°C Thermal Resistance, Junction Ambient Total Device Dissipation Alumina Substrate,(2) 25°C Derate above 25°C Thermal Resistance, Junction Ambient Junction Storage Temperature Symbol RqJA RqJA Tstg +150 Unit mW/°C °C/W mW/°C °C/W ANODE
CASE 318-08, STYLE SOT-23 (TO-236AB)
CATHODE
DEVICE MARKING
BAL99LT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Voltage Leakage Current Vdc) Vdc, 150°C) Vdc, 150°C) Reverse Breakdown Voltage µAdc) Forward Voltage mAdc) mAdc) mAdc) mAdc) Recovery Current mAdc, Vdc, Diode Capacitance MHz) Reverse Recovery Time mAdc, measured mAdc) Forward Recovery Voltage mAdc, FR-5 0.75 0.062 Alumina 0.024 99.5% alumina. V(BR) 1000 1250 1.75 µAdc
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev.
Publication Order Number: BAL99LT1/D
BAL99LT1
TYPICAL CHARACTERISTICS
FORWARD CURRENT (mA) REVERSE CURRENT 150°C 125°C
85°C 25°C -40°C
85°C 55°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
0.001
FORWARD VOLTAGE (VOLTS)
Figure Forward Voltage
Figure Leakage Current
0.68 DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
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Semiconductort
Switching Diode
Leakage Current Applications Medium Speed Switching Times Available Tape Reel
This switching diode following features:
BAS116LT1
Semiconductor Preferred Device
BAS116LT1 order inch/3,000 unit reel BAS116LT3 order inch/10,000 unit reel
CATHODE
ANODE
CASE 318-08, STYLE SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol IFM(surge) Value Unit mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 25°C Derate above 25°C Board(1) Symbol RqJA RqJA Tstg +150 Unit mW/°C °C/W mW/°C °C/W
Thermal Resistance, Junction Ambient Total Device Dissipation Alumina Substrate(2) 25°C Derate above 25°C Thermal Resistance, Junction Ambient Junction Storage Temperature
DEVICE MARKING
BAS116LT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Breakdown Voltage (IBR µAdc) Reverse Voltage Leakage Current Vdc) Reverse Voltage Leakage Current Vdc, 150°C) Forward Voltage mAdc) Forward Voltage mAdc) Forward Voltage mAdc) Forward Voltage mAdc) Diode Capacitance MHz) Reverse Recovery Time mAdc) (Figure FR-5 0.75 0.062 Alumina 0.024 99.5% alumina.
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
V(BR)
1000 1100 1250
nAdc
March, 2001 Rev.
Publication Order Number: BAS116LT1/D
BAS116LT1
INPUT SAMPLING OSCILLOSCOPE INPUT SIGNAL iR(REC)
OUTPUT PULSE MEASURED iR(REC)
OUTPUT PULSE GENERATOR
Notes: variable resistor adjusted Forward Current (IF) Notes: Input pulse adjusted IR(peak) equal Notes:
Figure Recovery Time Equivalent Test Circuit
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Semiconductort
Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol IFM(surge) Value Unit mAdc mAdc
BAS16HT1
Semiconductor Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,* 25°C Derate above 25°C Thermal Resistance Junction Ambient Junction Storage Temperature
**FR-4 Minimum
Symbol
1.57
Unit mW/°C °C/W
CASE 477-02, STYLE SOD323
Tstg
CATHODE
ANODE
DEVICE MARKING
BAS16HT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Voltage Leakage Current Vdc) Vdc, 150°C) Vdc, 150°C) Reverse Breakdown Voltage (IBR µAdc) Forward Voltage mAdc) mAdc) mAdc) mAdc) Diode Capacitance MHz) Forward Recovery Voltage mAdc, Reverse Recovery Time mAdc, Stored Charge mAdc Vdc, V(BR) 1000 1250 1.75 µAdc
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
May, 2001 Rev.
Publication Order Number: BAS16HT1/D
BAS16HT1
D.U.T. INPUT SAMPLING OSCILLOSCOPE INPUT SIGNAL iR(REC) OUTPUT PULSE MEASURED iR(REC)
OUTPUT PULSE GENERATOR
Notes: variable resistor adjusted Forward Current (IF) Notes: Input pulse adjusted IR(peak) equal Notes:
Figure Recovery Time Equivalent Test Circuit
FORWARD CURRENT (mA) 85°C -40°C REVERSE CURRENT (µA)
150°C 125°C
85°C 55°C
25°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
FORWARD VOLTAGE (VOLTS)
0.001
Figure Forward Voltage
Figure Leakage Current
0.68 DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
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Semiconductort
Switching Diode
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol IFM(surge) Value Unit
BAS16LT1
Semiconductor Preferred Device
mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 25°C Derate above 25°C Board(1) Symbol RqJA RqJA Tstg +150 Unit mW/°C °C/W mW/°C °C/W CATHODE
CASE 318-08, STYLE SOT-23 (TO-236AB)
Thermal Resistance, Junction Ambient Total Device Dissipation Alumina Substrate,(2) 25°C Derate above 25°C Thermal Resistance, Junction Ambient Junction Storage Temperature
ANODE
DEVICE MARKING
BAS16LT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Voltage Leakage Current Vdc) Vdc, 150°C) Vdc, 150°C) Reverse Breakdown Voltage (IBR µAdc) Forward Voltage mAdc) mAdc) mAdc) mAdc) Diode Capacitance MHz) Forward Recovery Voltage mAdc, Reverse Recovery Time mAdc, Stored Charge mAdc Vdc, FR-5 0.75 0.062 Alumina 0.024 99.5% alumina.
Preferred devices Semiconductor recommended choices future best overall value.
V(BR) 1000 1250 1.75
µAdc
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev.
Publication Order Number: BAS16LT1/D
BAS16LT1
D.U.T. INPUT SAMPLING OSCILLOSCOPE INPUT SIGNAL iR(REC) OUTPUT PULSE MEASURED iR(REC)
OUTPUT PULSE GENERATOR
Notes: variable resistor adjusted Forward Current (IF) Notes: Input pulse adjusted IR(peak) equal Notes:
Figure Recovery Time Equivalent Test Circuit
FORWARD CURRENT (mA) 85°C -40°C REVERSE CURRENT (µA)
150°C 125°C
85°C 55°C
25°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
FORWARD VOLTAGE (VOLTS)
0.001
Figure Forward Voltage
Figure Leakage Current
0.68 DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
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BAS16TT1
Preferred Device
Silicon Switching Diode
MAXIMUM RATINGS 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width Symbol IFM(surge) Unit
http://onsemi.com
CATHODE
ANODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR-4 Board 25°C Derated above 25°C Thermal Resistance, Junction Ambient Total Device Dissipation, FR-4 Board 25°C Derated above 25°C Thermal Resistance, Junction Ambient Junction Storage Temperature Range FR-4 Minimum FR-4 Inch Symbol Tstg +150 mW/°C °C/W mW/°C °C/W CASE SOT-416/SC-75 STYLE Unit
DEVICE MARKING
ORDERING INFORMATION
Device BAS16TT1 Package SOT-416 Shipping 3000 Tape Reel
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
May, 2000 Rev.
Publication Order Number: BAS16TT1/D
BAS16TT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Forward Voltage Reverse Current 150°C) 150°C) Capacitance MHz) Reverse Recovery Time (Figure Stored Charge (Figure Forward Recovery Voltage (Figure Symbol 1.75 1000 1250 Unit
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BAS16TT1
DUTY CYCLE
Figure Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
BAW62
DUTY CYCLE
Figure Stored Charge Equivalent Test Circuit
DUTY CYCLE
Figure Forward Recovery Voltage Equivalent Test Circuit
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BAS16TT1
REVERSE CURRENT (µA) FORWARD CURRENT (mA) 150°C 125°C
85°C 25°C -40°C
85°C 55°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
FORWARD VOLTAGE (VOLTS)
0.001
Figure Forward Voltage
Figure Leakage Current
0.68 DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.05 0.02
0.01
0.01 SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
TIME
1000
Figure Normalized Thermal Response
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Semiconductort
Silicon Switching Diode
MAXIMUM RATINGS 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width Total Power Dissipation, Diode Loaded 25°C Derate above 25°C Mounted Ceramic Substrate Operating Storage Junction Temperature Range Symbol IFM(surge) Unit mW/°C
BAS16WT1
Semiconductor Preferred Device
CASE 419-04, STYLE SC-70/SOT-323
Tstg
+150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction Ambient Diode Loaded Mounted Ceramic Substrate Symbol 0.625 Unit °C/mW
CATHODE
ANODE
DEVICE MARKING
BAS16WT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Forward Voltage Reverse Current 150°C) 150°C) Capacitance MHz) Reverse Recovery Time (Figure Stored Charge (Figure Forward Recovery Voltage (Figure Symbol 1.75 1000 1250 Unit
Preferred devices Semiconductor recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev.
Publication Order Number: BAS16WT1/D
BAS16WT1
DUTY CYCLE
Figure Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
BAW62
DUTY CYCLE
Figure Stored Charge Equivalent Test Circuit
DUTY CYCLE
Figure Forward Recovery Voltage Equivalent Test Circuit
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BAS16WT1
REVERSE CURRENT (µA) FORWARD CURRENT (mA) 150°C 125°C
85°C 25°C -40°C
85°C 55°C
0.01 25°C REVERSE VOLTAGE (VOLTS)
FORWARD VOLTAGE (VOLTS)
0.001
Figure Forward Voltage
Figure Leakage Current
0.68 DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
REVERSE VOLTAGE (VOLTS)
Figure Capacitance
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BAS20HT1
Preferred Device
High Voltage Switching Diode
Device Marking:
http://onsemi.com
MAXIMUM RATINGS
Symbol IFM(surge) Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Value Unit mAdc mAdc
HIGH VOLTAGE SWITCHING DIODE
CATHODE
ANODE
THERMAL CHARACTERISTICS
Symbol Characteristic Total Device Dissipation FR-5 Board,* 25°C Derate above 25°C Thermal Resistance Junction Ambient Junction Storage Temperature Range 1.57 +150 Unit
mW/°C °C/W
RqJA Tstg
*FR-5 Minimum
SOD-323 CASE STYLE
MARKING DIAGRAM
Specific Device Code Date Code
ORDERING INFORMATION
Device BAS20HT1 Package SOD-323 Shipping 3000/Tape Reel
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 Rev.
Publication Order Number: BAS20HT1/D
BAS20HT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Voltage Leakage Current Vdc) Vdc, 150°C) Reverse Breakdown Voltage (IBR µAdc) Forward Voltage mAdc) mAdc) Diode Capacitance MHz) Reverse Recovery Time mAdc, V(BR) 1000 1250 µAdc
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BAS20HT1
D.U.T. Output Pulse Generator Input Sampling Oscilloscope INPUT SIGNAL iR(REC) OUTPUT PULSE MEASURED iR(REC)
Notes: variable resistor adjusted Forward Current (IF) Notes: Input pulse adjusted IR(peak) equal Notes:
Figure Recovery Time Equivalent Test Circuit
1000 FORWARD CURRENT (mA) REVERSE CURRENT
150°C 125°C 55°C
25°C
55°C
125°C 150°C -40°C
25°C
0.01 -40°C
0.001 FORWARD VOLTAGE REVERSE VOLTAGE
Figure Forward Current
Figure Leakage Current
TOTAL CAPACITANCE (pF) FORWARD VOLTAGE REVERSE VOLTAGE
150°C FORWARD CURRENT (mA) -40°C 25°C 55°C 125°C
25°C
Figure Total Capacitance
Figure Forward Voltage
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BAS21HT1
Preferred Device
High Voltage Switching Diode
Device Marking:
http://onsemi.com
MAXIMUM RATINGS
Symbol IFM(surge) Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Value Unit mAdc mAdc
HIGH VOLTAGE SWITCHING DIODE
THERMAL CHARACTERISTICS
Symbol Characteristic Total Device Dissipation FR-5 Board,* 25°C Derate above 25°C Thermal Resistance Junction Ambient Junction Storage Temperature Range 1.57 +150 Unit mW/°C °C/W
RqJA Tstg
PLASTIC SOD-323 CASE
*FR-5 Minimum
CATHODE
ANODE
ORDERING INFORMATION
Device BAS21HT1 Package SOD-323 Shipping 3000 Tape Reel
Preferred devices recommended choices future best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2000 Rev.
Publication Order Number: BAS21HT1/D
BAS21HT1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Reverse Voltage Leakage Current Vdc) Vdc, 150°C) Reverse Breakdown Vol
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