1.0A Surface Mount Ultra-Fast Rectifier Glass passivated construc

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1.0A Surface Mount Ultra-Fast Rectifier Glass passivated construc

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ES1A-ES1G
1.0A Surface Mount Ultra-Fast Rectifier
Glass passivated construction Super-fast recovery time high efficiency forward voltage drop, high current
capability, power loss
Surge overload rating peak Ideally suited automated assembly Plastic material Recognition flammability
classification 94V-0
Absolute Maximum Ratings
25_C Parameter Repetitive peak reverse voltage =Working peak reverse voltage Blocking voltage Test Conditions Type ES1A ES1B ES1C ES1D ES1G TT=110°C Symbol VRRM =VRWM Value -65.+150 Unit
Peak forward surge current Average forward current Junction storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
25_C Parameter Forward voltage Test Conditions IF=0.6A IF=1A IF=1A TA=25°C TA=100°C IF=1A, IR=0.5A, Irr=0.25A VR=4V, f=1MHz board with 5.0mm2 Type Symbol Unit ES1A-ES1D 0.90 ES1A-ES1D 0.98 ES1G 1.25 RthJT
Reverse current Reverse recovery time Diode capacitance Thermal resistance junction terminal
Rev. 24-Jun-98
ES1A-ES1G
Vishay Lite-On Power Semiconductor Characteristics 25_C unless otherwise specified)
IFSM Peak Forward Surge Current IFAV Average Forward Current
Single Half Sine-Wave (JEDEC Method)
15397
Number Cycles
15399
Tamb Ambient Temperature
Figure Max. Average Forward Current Ambient Temperature
Figure Max. Peak Forward Surge Current Number Cycles
Reverse Current
100°C
25°C Pulse Width
Forward Current
ES1A ES1D
ES1G
25°C
0.01
15398
15400
Forward Voltage
Percent Rated Peak Reverse Voltage
Figure Typ. Forward Current Forward Voltage
Figure Typ. Reverse Current Percent Rated Peak Reverse Voltage
Rev. 24-Jun-98
ES1A-ES1G
Vishay Lite-On Power Semiconductor Dimensions
14458
Case: molded plastic Polarity: cathode band cathode notch Approx. weight: 0.064 grams Mounting position: Marking: type number
Rev. 24-Jun-98
ES1A-ES1G
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Rev. 24-Jun-98

1.0A Surface Mount Ultra-Fast Rectifier Glass passivated construc

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