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TAN350 high power COMMON BASE bipolar transistor. designed pulsed syst


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Watts, Volts, Pulsed Avionics 1215
TAN350 high power COMMON BASE bipolar transistor. designed pulsed systems frequency band 960-1215 MHz. device gold thin-film metallization diffused ballasting proven highest MTTF. transistor includes input output prematch broadband capability. thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE 55ST Style
ABSOLUTE MAXIMUM RATINGS
Power Dissipation Device Dissipation @25°C (Pd) 1450 Voltage Current Collector Base Voltage (BVces Emitter Base Voltage (BVebo) Collector Current Temperatures Storage Temperature +200 Operating Junction Temperature +230 rated pulse condition)
ELECTRICAL CHARACTERISTICS 25°C SYMBOL Pout VSWR CHARACTERISTICS Power Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS 1215 Volts µsec 1090 UNITS
FUNCTIONAL CHARACTERISTICS 25°C BVebo BVces Emitter Base Breakdown Collector Emitter Breakdown Current Gain Thermal Resistance °C/W
Sept. 2005
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.
TAN350
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.
TAN350
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.
TAN350
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site www.advancedpower.com contact factory direct.

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