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TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Secur
Top Searches for this datasheetTLP4222G,TLP4222G-2 TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Security Equipment Toshiba TLP4222G consists aluminum gallium arsenide infrared emitting diode optically coupled photo-MOSFET normally closed photorelay with 350-V withstanding voltage. Normally closed device Peak off-state voltage: (min) Trigger current: (max) On-state current: (max) On-state resistance: (max) Isolation voltage: 2500 Vrms (min) JEDEC JEITA TLP4222G TLP4222G-2 Unit: Configuration (top view) 11-5B2 TOSHIBA Weight: 0.26 (typ.) Anode Cathode Drain Drain JEDEC JEITA Anode Cathode Drain Drain Drain Drain 11-10C4 TOSHIBA Weight: 0.54 (typ.) 2002-12-26 TLP4222G,TLP4222G-2 Maximum Ratings 25°C) Characteristics Forward current Forward current derating 25°C) Peak forward current (100 pulse, pps) Reverse voltage Junction temperature Off-state output terminal voltage TLP4222G On-state current Detector TLP4222G-2 TLP4222G On-state current derating 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Isolation voltage (AC, min, R.H. 60%) (Note TLP4222G-2 channel operation channel operations Tstg Topr Tsol 2500 Vrms DION/°C -1.0 mA/°C channel operation channel operations Symbol DIF/°C VOFF Rating -0.5 Unit mA/°C Note TLP4222G, Pins shorted together, pins shorted together. TLP4222G-2, Pins shorted together, pins shorted together. Recommended Operating Conditions Characteristics Supply voltage Forward current On-state current Operating temperature Symbol Topr Typ. Unit Electrical Characteristics 25°C) Characteristics Forward voltage Reverse current Capacitance Detector Off-state current Capacitance Symbol IOFF COFF VOFF MHz, Test Condition Typ. 1.15 Unit 2002-12-26 TLP4222G,TLP4222G-2 Coupled Electrical Characteristics 25°C) Characteristics Trigger current Return current On-state resistance Symbol Test Condition IOFF Typ. Unit Isolation Characteristics 25°C) Characteristics Capacitance input output Isolation resistance Symbol Test Condition R.H. Isolation voltage min, Typ. Unit Vrms 2500 5000 5000 Switching Characteristics 25°C) Characteristics Turn-on time Turn-off time Symbol tOFF Test Condition (Note Typ. 0.25 Unit Note Switching time test circuit VOUT VOUT tOFF VOUT VOUT tOFF 2002-12-26 TLP4222G,TLP4222G-2 (mA) Allowable on-state current (mA) Allowable forward current Ambient temperature (°C) Ambient temperature (°C) 25°C (mA) Forward current Forward voltage 2002-12-26 TLP4222G,TLP4222G-2 t<1s t<1s On-state resistance Trigger current (mA) Ambient temperature (°C) Ambient temperature (°C) IOFF 1000 VOFF 25°C (nA) Off-state current IOFF On-state current (mA) -100 -150 Ambient temperature (°C) On-state voltage tON, tOFF 3000 25°C 3000 1000 tOFF tON, tOFF (ms) 1000 tON, tOFF tON, tOFF (ms) Switching time tOFF Switching time Input current (mA) Ambient temperature (°C) 2002-12-26 TLP4222G,TLP4222G-2 RESTRICTIONS PRODUCT 020704EBC TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. Gallium (GaAs) Arsenide substance used products described this document. GaAs dust vapor harmful human body. break, cut, crushu dissolve chemically. products described this document subject foreign exchange foreign trade laws. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice. 2002-12-26 Other recent searchesPD-21071 - PD-21071 PD-21071 Datasheet NTHD4502N - NTHD4502N NTHD4502N Datasheet MSM54V24616 - MSM54V24616 MSM54V24616 Datasheet MM2500 - MM2500 MM2500 Datasheet MJE13002 - MJE13002 MJE13002 Datasheet MJE13003 - MJE13003 MJE13003 Datasheet IS80LV51 - IS80LV51 IS80LV51 Datasheet IS80LV31 - IS80LV31 IS80LV31 Datasheet EDB101 - EDB101 EDB101 Datasheet EDB107 - EDB107 EDB107 Datasheet 1754478 - 1754478 1754478 Datasheet
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