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TLP4222G,TLP4222G-2 Telecommunication Measurement Equipment Secur


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TLP4222G,TLP4222G-2
TLP4222G,TLP4222G-2
Telecommunication Measurement Equipment Security Equipment
Toshiba TLP4222G consists aluminum gallium arsenide infrared emitting diode optically coupled photo-MOSFET normally closed photorelay with 350-V withstanding voltage. Normally closed device Peak off-state voltage: (min) Trigger current: (max) On-state current: (max) On-state resistance: (max) Isolation voltage: 2500 Vrms (min) JEDEC JEITA
TLP4222G TLP4222G-2
Unit:
Configuration (top view)
11-5B2
TOSHIBA
Weight: 0.26 (typ.)
Anode Cathode Drain Drain
JEDEC JEITA
Anode Cathode Drain Drain Drain Drain
11-10C4
TOSHIBA
Weight: 0.54 (typ.)
2002-12-26
TLP4222G,TLP4222G-2
Maximum Ratings 25°C)
Characteristics Forward current Forward current derating 25°C) Peak forward current (100 pulse, pps) Reverse voltage Junction temperature Off-state output terminal voltage TLP4222G On-state current Detector TLP4222G-2 TLP4222G On-state current derating 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Isolation voltage (AC, min, R.H. 60%) (Note TLP4222G-2 channel operation channel operations Tstg Topr Tsol 2500 Vrms DION/°C -1.0 mA/°C channel operation channel operations Symbol DIF/°C VOFF Rating -0.5 Unit mA/°C
Note TLP4222G, Pins shorted together, pins shorted together. TLP4222G-2, Pins shorted together, pins shorted together.
Recommended Operating Conditions
Characteristics Supply voltage Forward current On-state current Operating temperature Symbol Topr Typ. Unit
Electrical Characteristics 25°C)
Characteristics Forward voltage Reverse current Capacitance Detector Off-state current Capacitance Symbol IOFF COFF VOFF MHz, Test Condition Typ. 1.15 Unit
2002-12-26
TLP4222G,TLP4222G-2
Coupled Electrical Characteristics 25°C)
Characteristics Trigger current Return current On-state resistance Symbol Test Condition IOFF Typ. Unit
Isolation Characteristics 25°C)
Characteristics Capacitance input output Isolation resistance Symbol Test Condition R.H. Isolation voltage min,
Typ.
Unit Vrms
2500
5000 5000
Switching Characteristics 25°C)
Characteristics Turn-on time Turn-off time Symbol tOFF Test Condition (Note Typ. 0.25 Unit
Note Switching time test circuit
VOUT
VOUT tOFF
VOUT
VOUT tOFF
2002-12-26
TLP4222G,TLP4222G-2
(mA) Allowable on-state current
(mA) Allowable forward current
Ambient temperature (°C)
Ambient temperature (°C)
25°C
(mA) Forward current
Forward voltage
2002-12-26
TLP4222G,TLP4222G-2
t<1s t<1s
On-state resistance
Trigger current
(mA)
Ambient temperature (°C)
Ambient temperature (°C)
IOFF
1000 VOFF 25°C
(nA)
Off-state current IOFF
On-state current
(mA)
-100
-150
Ambient temperature (°C)
On-state voltage
tON, tOFF
3000 25°C 3000 1000 tOFF
tON, tOFF
(ms)
1000
tON, tOFF
tON, tOFF
(ms)
Switching time
tOFF
Switching time
Input current
(mA)
Ambient temperature (°C)
2002-12-26
TLP4222G,TLP4222G-2
RESTRICTIONS PRODUCT
020704EBC
TOSHIBA continually working improve quality reliability products. Nevertheless, semiconductor devices general malfunction fail their inherent electrical sensitivity vulnerability physical stress. responsibility buyer, when utilizing TOSHIBA products, comply with standards safety making safe design entire system, avoid situations which malfunction failure such TOSHIBA products could cause loss human life, bodily injury damage property. developing your designs, please ensure that TOSHIBA products used within specified operating ranges forth most recent TOSHIBA products specifications. Also, please keep mind precautions conditions forth "Handling Guide Semiconductor Devices," "TOSHIBA Semiconductor Reliability Handbook" etc. TOSHIBA products listed this document intended usage general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products neither intended warranted usage equipment that requires extraordinarily high quality and/or reliability malfunction failure which cause loss human life bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, types safety devices, etc. Unintended Usage TOSHIBA products listed this document shall made customer's risk. Gallium (GaAs) Arsenide substance used products described this document. GaAs dust vapor harmful human body. break, cut, crushu dissolve chemically. products described this document subject foreign exchange foreign trade laws. information contained herein presented only guide applications products. responsibility assumed TOSHIBA CORPORATION infringements intellectual property other rights third parties which result from use. license granted implication otherwise under intellectual property other rights TOSHIBA CORPORATION others. information contained herein subject change without notice.
2002-12-26

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