Area flat 2.54 spacing Cathode Chip position Appro

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Area flat 2.54 spacing Cathode Chip position Appro

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GaAIAs-IR-Lumineszenzdiode (880 GaAIAs Infrared Emitter (880
Area flat
2.54 spacing
Cathode
Chip position
Approx. weight
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale GaAIAs-IR-Lumineszenzdiode, hergestellt Schmelzepitaxieverfahren Hohe Enge Toleranz: Bauteiloberkante Hohe Impulsbelastbarkeit Gute spektrale Anpassung Sehr plane Anwendungen
Lichtschranken Gleich-
Features GaAIAs infrared emitting diode, fabricated liquid phase epitaxy process High reliability Small tolerance: Chip surface case surface High pulse handling capability Good spectral match silicon photodetectors Plane surface Same package Applications
Photointerrupters Fibre optic transmission
Wechsellichtbetrieb
Type
Bestellnummer Ordering Code Q62703-Q517
Package plan, klares violettes EpoxyGieharz, 2.54-mm-Raster (1/10''), Anodenkennzeichnung: Anschlu package plane, violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 (1/10''), anode marking: short lead
Semiconductor Group
1997-11-01
fex06308
GEX06308
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- Lagertemperatur Operating storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, Surge current Verlustleistung Power dissipation freie max. Thermal resistance, lead length between package bottom PC-board max. Symbol Symbol Wert Value Einheit Unit
Top; Tstg IFSM Ptot RthJA
Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Imax, Symbol Symbol peak Wert Value Einheit Unit
Spectral bandwidth Imax Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktiven Dimension active chip area 0.16 Grad deg.
Semiconductor Group
1997-11-01
Kennwerte Characteristics Bezeichnung Description Abstand Distance chip front case surface Schaltzeiten, Switching times, from from Capacitance Durchlaspannung Forward voltage Sperrstrom Reverse current Gesamtstrahlungsflu Total radiant flux Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient peak, Temperature coefficient peak, Symbol Symbol Wert Value Einheit Unit
0.6/0.5
1.8) 3.8) 0.01
0.25
mV/K nm/K
Semiconductor Group
1997-11-01
Achsrichtung gemessen einem Raumwinkel 0.01 Grouping radiant intensity axial direction solid angle 0.01 Bezeichnung Description Radiant intensity Radiant intensity Symbol Wert Value Einheit Unit
mW/sr
typ.
mW/sr
Radiation characteristics Irel
OHR01894
Semiconductor Group
1997-11-01
Relative spectral emission Irel
OHR00877
Radiant intensity
(IF)
OHR00878
Single pulse,
(100mA)
Max. permissible forward current (TA)
OHR00880
1000
Forward current, (VF) Single pulse,
OHR00881
Permissible pulse handling capability duty cycle parameter
OHR00886
Forward current versus lead length between package bottom PC-board (I),
OHR00949
0.005 0.01 0.02 0.05
Semiconductor Group
1997-11-01

Area flat 2.54 spacing Cathode Chip position Appro

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