Area flat 2.54 spacing Anode 29.5 27.5 Chip positi

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Area flat 2.54 spacing Anode 29.5 27.5 Chip positi

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GaAIAs-IR-Lumineszenzdiode (880 GaAIAs Infrared Emitter (880
Area flat
2.54 spacing
Anode
29.5 27.5
Chip position
Approx. weight
GEX06626
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale Hergestellt Schmelzepitaxieverfahren Hohe Gute spektrale Anpassung Anwendungen
IR-Fernsteuerung Fernseh-
Features Fabricated liquid phase epitaxy process High reliability Spectral match with silicon photodetectors
Applications
remote control hi-fi TV-sets, video
Videorecordern, Lichtdimmern Gleich- Wechsellichtbetrieb Type Bestellnummer Ordering Code Q62703-Q1094
tape recorders, dimmers
Remote control steady varying
intensity
Semiconductor Group
1997-11-01
fex06626
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- Lagertemperatur Operating storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, Surge current Verlustleistung Power dissipation Thermal resistance Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Irel Spectral bandwidth Irel Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktive Dimension active chip area Abstand Linsenscheitel Distance chip front lens Symbol Symbol peak Wert Value Einheit Unit Symbol Symbol Wert Value Einheit Unit
Top; Tstg IFSM Ptot RthJA
0.16
Grad deg.
Semiconductor Group
1997-11-01
Kennwerte Characteristics Bezeichnung Description Schaltzeiten, Switching times, from from Capacitance Durchlaspannung Forward voltage Sperrstrom Reverse current Gesamtstrahlungsflu Total radiant flux Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient Temperature coefficient Symbol Symbol Wert Value 0.6/0.5 Einheit Unit
1.50 1.8) 3.00 3.8) 0.01
0.25
mV/K nm/K
Achsrichtung gemessen einem Raumwinkel 0.001 Grouping radiant intensity axial direction solid angle 0.001 Bezeichnung Description Radiant intensity Radiant intensity Symbol Wert Value typ. Einheit Unit mW/sr mW/sr
typ.
mW/sr
Semiconductor Group
1997-11-01
Relative spectral emission Irel
OHR00877
(IF) Single pulse, Radiant intensity
(100mA)
OHR00878
Max. permissible forward current (TA)
OHR00880
1000
Forward current (VF), single pulse,
OHR00881
Permissible pulse handling capability duty cycle parameter
OHR00886
Forward current versus lead length between package bottom PC-board (l),
OHR00949
0.005 0.01 0.02 0.05
Radiation characteristics Irel
OHR01733
Semiconductor Group
1997-11-01

Area flat 2.54 spacing Anode 29.5 27.5 Chip positi

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