Area flat 2.54 spacing Cathode Chip position GEX06

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Area flat 2.54 spacing Cathode Chip position GEX06

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GaAIAs-IR-Lumineszenzdioden (880 GaAIAs Infrared Emitters (880
Area flat
2.54 spacing
Cathode
Chip position
GEX06271
Approx. weight
Area flat
2.54 spacing
Cathode
Chip position
Approx. weight
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale
Hergestellt Schmelzepitaxieverfahren Hohe Gute spektrale Anpassung
Features
484: 485: 300,
Fabricated liquid phase epitaxy process High reliability Spectral match with silicon photodetectors 484: Same package 485: Same package 300,
Anwendungen
IR-Fernsteuerung Fernseh-
Applications
remote control hi-fi TV-sets, video
Videorecordern, Lichtdimmern Gleich- Wechsellichtbetrieb
tape recorders, dimmers
Remote control steady varying
intensity
Semiconductor Group
1997-11-01
fex06305
GEX06305
fex06271
Type 484-1 484-2 485-2
Bestellnummer Ordering Code Q62703-Q1092 Q62703-Q1755 Q62703-Q1756 Q62703-Q1093 Q62703-Q1547
Package 3/4), klares violettes 2.54-mm-Raster (1/10''), Anodenkennzeichung: package 3/4), violet-colored epoxy resin, solder tabs lead spacing 2.54 (1/10''), anode marking: short lead
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- Lagertemperatur Operating storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Forward current Surge current Verlustleistung Power dissipation freie max. Thermal resistance, lead length between package bottom PC-board max. Symbol Symbol Wert Value Einheit Unit
Top; Tstg IFSM Ptot RthJA
Semiconductor Group
1997-11-01
Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Irel Spectral bandwidth Irel Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktive Dimension active chip area Abstand Linsenscheitel Distance chip front lens Schaltzeiten, Switching times, from from to10 Capacitance Forward voltage Sperrstrom Reverse current Total radiant flux Symbol Symbol peak Wert Value Einheit Unit
0.16
Grad deg.
0.6/0.5
1.50 1.8) 3.00 3.8) 0.01
Semiconductor Group
1997-11-01
Kennwerte Characteristics Bezeichnung Description Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient Temperature coefficient Symbol Symbol Wert Value Einheit Unit
0.25
mV/K nm/K
Achsrichtung gemessen einem Raumwinkel 0.001 bzw. 0.01 Grouping radiant intensity axial direction solid angle 0.001 0.01 Bezeichnung Description Symbol Radiant intensity Radiant intensity 484-1 Wert Value 484-2 485-2 mW/sr mW/sr Einheit Unit
typ.
mW/sr
Radiation characteristics, Irel
OHR01891
Semiconductor Group
1997-11-01
Relative spectral emission Irel
OHR00877
(IF) Single pulse, Radiant intensity
(100mA)
OHR00878
Max. permissible forward current (TA)
OHR00880
1000
Forward current (VF), single pulse,
OHR00881
Permissible pulse handling capability duty cycle parameter
OHR00886
Forward current versus lead length between package bottom PC-board (I),
OHR00949
0.005 0.01 0.02 0.05
Radiation characteristics, Irel
OHR01892
Semiconductor Group
1997-11-01

Area flat 2.54 spacing Cathode Chip position GEX06

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